| 1. |
- Andersson, Sebastian, et al.
(författare)
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Exchange coupling and magnetoresistance in CoFe/NiCu/CoFe spin valves near the Curie point of the spacer
- 2010
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 107:9, s. 09D711-
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Tidskriftsartikel (refereegranskat)abstract
- Thermal control of exchange coupling between two strongly ferromagnetic layers through a weakly ferromagnetic Ni-Cu spacer and the associated magnetoresistance is investigated. The spacer, having a Curie point slightly above room temperature, can be cycled between its paramagnetic and ferromagnetic states by varying the temperature externally or using joule heating. It is shown that the giant magnetoresistance vanishes due to a strong reduction in the mean free path in the spacer at above similar to 30% Ni concentration-before the onset of ferromagnetism. Finally, a device is proposed which combines thermally controlled exchange coupling and large magnetoresistance by separating the switching and the readout elements.
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| 2. |
- Andersson, Sebastian, 1981-
(författare)
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Spin-diode effect and thermally controlled switching in magnetic spin-valves
- 2012
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- This thesis demonstrates two new device concepts that are based on the tunneling and giant magnetoresistance effects. The first is a semiconductor-free asymmetric magnetic double tunnel junction that is shown to work as a diode, while at the same time exhibiting a record high magnetoresistance. It is experimentally verified that a diode effect, with a rectification ratio of at least 100, can be obtained in this type of system, and that a negative magnetoresistance of nearly 4000% can be measured at low temperature. The large magnetoresistance is attributed to spin resonant tunneling, where the parallel and antiparallel orientation of the magnetic moments shifts the energy levels in the middle electrode, thereby changing their alignment with the conduction band in the outer electrodes. This resonant tunneling can be useful when scaling down magnetic random access memory; eliminating the need to use external diodes or transistors in series with each bit. The second device concept is a thermally controlled spin-switch; a novel way to control the free-layer switching and magnetoresistance in spin-valves. By exchange coupling two ferromagnetic films through a weakly ferromagnetic Ni-Cu alloy, the coupling is controlled by changes in temperature. At room temperature, the alloy is weakly ferromagnetic and the two films are exchange coupled through the alloy. At a temperature higher than the Curie point, the alloy is paramagnetic and the two strongly ferromagnetic films decouple. Using this technique, the read out signal from a giant magnetoresistance element is controlled using both external heating and internal Joule heating. No degradation of device performance upon thermal cycling is observed. The change in temperature for a full free-layer reversal is shown to be 35 degrees Celsius for the present Ni-Cu alloy. It is predicted that this type of switching theoretically can lead to high frequency oscillations in current, voltage, and temperature, where the frequency is controlled by an external inductor or capacitor. This can prove to be useful for applications such as voltage controlled oscillators in, for example, frequency synthesizers and function generators. Several ways to optimize the thermally controlled spin switch are discussed and conceptually demonstrated with experiments.
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| 3. |
- Andersson, Sebastian, et al.
(författare)
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Thermoelectrically Controlled Spin-Switch
- 2010
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Ingår i: IEEE transactions on magnetics. - 0018-9464 .- 1941-0069. ; 46:6, s. 2140-2143
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Tidskriftsartikel (refereegranskat)abstract
- The search for novel spintronic devices brings about new ways to control switching in magnetic thin-films. In this work we experimentally demonstrate a device based on thermoelectrically controlled exchange coupling. The read out signal from a giant magnetoresistance element is controlled by exchange coupling through a weakly ferromagnetic Ni-Cu alloy. This exchange coupling is shown to vary strongly with changes in temperature, and both internal Joule heating and external heating is used to demonstrate magnetic switching. The device shows no degradation upon thermal cycling. Ways to further optimize the device performance are discussed. Our experimental results show a new way to thermoelectrically control magnetic switching in multilayers.
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| 4. |
- Balkashin, O. P., et al.
(författare)
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Ferromagnetic resonance in copper-permalloy point contacts
- 2014
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Ingår i: Fizika Nizkih Temperatur. - 0132-6414 .- 1816-0328. ; 40:10, s. 1187-1197
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Tidskriftsartikel (refereegranskat)abstract
- The systematic investigations of the response signal of Copper-Permalloy (Ni80Fe20) point contacts to microwave irradiation (8-12 GHz) are performed. The influence of external magnetic field strength, transport current flowing through the contact, the intensity and frequency of the RF exposure on the measured signal is studied. The contributions to the contacts resistance from the effects of giant and anisotropic magnetoresistance are analyzed. It is established experimentally that the position of resonance features is in good agreement with the Kittel formula calculation for FMR in the film at a parallel H field. The resonance signal was observed on the background of an additional contribution due to the rectification of RF current on the nonlinear contact IV-curve. It is found that there are two mechanisms for the resonant response are revealed: a synchronous self-detection by means of mixing of RF current with temporal variations of resistance and a bolometric mechanism associated with a steady-state change of contact resistance under excitation of magnetization precession (a bolometric response). It is found that the resonance signal amplitude is linearly proportional to transport current through the contact and microwave irradiation intensity.
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| 5. |
- Balkashin, O. P., et al.
(författare)
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Ferromagnetic resonance in copper-permalloy point contacts
- 2014
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Ingår i: Low temperature physics (Woodbury, N.Y., Print). - : AIP Publishing. - 1063-777X .- 1090-6517. ; 40:10, s. 929-936
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Tidskriftsartikel (refereegranskat)abstract
- The response of copper-permalloy (Ni80Fe20) point microcontacts to microwave irradiation (8-12 GHz) is investigated systematically. The effects of the external magnetic field strength, transport current flowing through the contact, and microwave intensity and frequency on the measured signal are studied. The contributions to the contact electrical resistance owing to giant and anisotropic magnetoresistance are analyzed. The experimentally determined positions of the resonance features are in good agreement with Kittel's formula for FMR in films in parallel magnetic fields. The resonance signal is observed against the background of an additional contribution owing to rectification of the rf field on the nonlinear current-voltage characteristic of the contact. Two mechanisms for the resonance response are discovered: synchronous self-detection from mixing of the rf current with temporal variations in the resistance and a bolometric response associated with the steady-state variation in the contact resistance when magnetization precession is excited. The amplitude of the resonance signal is linearly proportional to the transport current through the contact and to the intensity of the microwave irradiation.
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| 6. |
- Balkashin, O. P., et al.
(författare)
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Nonstationary magnetization dynamics of point contacts with a single ferromagnetic film
- 2009
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Ingår i: Low temperature physics (Woodbury, N.Y., Print). - : AIP Publishing. - 1063-777X .- 1090-6517. ; 35:8-9, s. 693-701
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Tidskriftsartikel (refereegranskat)abstract
- The electric conductivity of point nanocontacts between 5, 10, and 100 nm thick ferromagnetic (F) cobalt films and a nonmagnetic (N) metal (copper or silver) needle is investigated. Two fundamentally different mechanisms for the formation of the response, signal to microwave irradiation have been observed for the first time. One mechanism is due to the effect of the rectification of high frequency ac current on the nonlinearity of the current-voltage characteristics due to the precession of the magnetization under the action of a constant transport current flowing through the contact. The second one is associated with the resonance excitation of the precession of the magnetization vector at the fundamental frequency and its harmonic by an external high-frequency field. The experimental results support a previous contention that a "surface spin valve" whose static and dynamic properties are similar to conventional F-1-N-F-2 spin valve [Nano Letters 7, 927 (2007)] is formed in the experimental F-N nanocontacts.
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| 7. |
- Balkashin, O. P., et al.
(författare)
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Spin dynamics in point contacts to single ferromagnetic films
- 2009
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 79:9, s. 092419-1-092419-4
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Tidskriftsartikel (refereegranskat)abstract
- Excitation of magnons or spin waves driven by nominally unpolarized transport currents in point contacts of normal and ferromagnetic metals is probed by irradiating the contacts with microwaves. Two characteristic dynamic effects are observed: a suppression of spin-wave nonlinearities in the point contact conductance by off-resonance microwave irradiation and a resonant stimulation of spin-wave peaks in the differential resistance of the nanocontacts by the microwave field. These observations provide direct evidence that the magnetoresistance peaks observed are due to gigahertz spin dynamics at the ferromagnetic interface driven by the spin transfer torque effect of the transport current.
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| 8. |
- Balkashin, O. P., et al.
(författare)
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Spin-valve effects in point contacts to exchange biased Co40Fe40B20 films
- 2014
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Ingår i: Low temperature physics (Woodbury, N.Y., Print). - : AIP Publishing. - 1063-777X .- 1090-6517. ; 40:10, s. 915-918
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Tidskriftsartikel (refereegranskat)abstract
- Nonlinear current-voltage characteristics and magnetoresistance of point contacts between a normal metal (N) and films of amorphous ferromagnet (F) Co40Fe40B20 of different thickness, exchange-biased by antiferromagnetic Mn80Ir20 are studied. A surface spin valve effect in the conductance of such F-N contacts is observed. The effect of exchange bias is found to be inversely proportional to the Co40Fe40B20 film thickness. This behavior as well as other magneto-transport effects we observe on single exchange-pinned ferromagnetic films are similar in nature to those found in conventional three-layer spin-valves.
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| 9. |
- Balkashin, O. P., et al.
(författare)
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Spin-valve effects in point contacts to exchange biased Сo 40Fe 40B 20 films
- 2014
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Ingår i: Fizika Nizkih Temperatur. - 0132-6414 .- 1816-0328. ; 40:10, s. 1170-1174
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Tidskriftsartikel (refereegranskat)abstract
- Nonlinear current-voltage characteristics and magnetoresistance of point contacts between a normal metal (N) and films of amorphous ferromagnet (F) Co40Fe40B20 of different thickness, exchange-biased by antiferromagnetic Mn80Ir20 are studied. A surface spin valve effect in the conductance of such F-N contacts is observed. The effect of exchange bias is found to be inversely proportional to the Co40Fe40B20 film thickness. This behavior as well as other magneto-transport effects we observe on single exchange-pinned ferromagnetic films are similar in nature to those found in conventional three-layer spin-valves.
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| 10. |
- Ban, S., et al.
(författare)
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Pattern storage and recognition using ferrofluids
- 2006
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 99:8
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Tidskriftsartikel (refereegranskat)abstract
- An implementation of an associative memory based on a ferromagnetic nanocolloid is proposed. The design contains inductive input and output units for training the ferrofluid as well as sensors incorporated into the output units for performing recall. Using Monte Carlo simulations of the system we demonstrate the possibility of creating nanoparticle configurations that can serve to associate input/output pattern pairs.
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