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- Takata, Y., et al.
(författare)
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Valence excitations observed in resonant soft X-ray emission spectra of K2Ni(CN)4.H2O at the Ni 2p edge
- 2001
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Ingår i: Journal of Electron Spectroscopy and Related Phenomena. - 0368-2048 .- 1873-2526. ; 114-116, s. 909-913
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Tidskriftsartikel (refereegranskat)abstract
- Resonant soft X-ray emission spectra have been measured at the Ni 2p edge of a planar nickel complex K2Ni(CN)4·H2O and interpreted by performing ab initio configuration interaction calculations. This cyano complex shows characteristic metal-to-ligand charge transfer (MLCT) bands in the Ni 2p photoabsorption spectra. Resonant soft X-ray emission via the MLCT intermediate states can be interpreted as valence MLCT excitations within a one-electron picture. On the other hand, resonant soft X-ray emission via the intra-atomic Ni 2p–3d intermediate state corresponding to the white line excitation shows significant electron correlation effects.
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- Wahab, Qamar Ul, et al.
(författare)
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4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching
- 2002
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Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 1215-1218
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Konferensbidrag (refereegranskat)abstract
- Vertical 4H- and 6H-SiC MOSFETs have been fabricated on sloped sidewalls formed by molten KOH etching, which is expected to be free from the damage onto a channel region caused by a dry etching process. The slope angle could be controlled by adjusting etching temperature, and the anisotropy of inversion channel mobility was investigated. A higher inversion channel mobility and a lower threshold voltage were observed with increasing slope angle of channel region toward (1 (1) over bar 00) or (11 (2) over bar0). The highest mobility was 32 cm(2)/Vs for 6H-SiC, which is relatively high as an inversion channel mobility of UMOSFETs compared to previous works. The dependence of device performance on the slope angle and crystal orientation is discussed.
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