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- J T Simms, R J T, et al.
(författare)
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Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances
- 2011
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Ingår i: SOLID-STATE ELECTRONICS. - : Elsevier Science B.V., Amsterdam.. - 0038-1101. ; 55:1, s. 5-7
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Tidskriftsartikel (refereegranskat)abstract
- A time-resolved micro-Raman technique was developed to probe the transient voltage in the GaN buffer layer of AlGaN/GaN heterostructure devices. The transient potential distribution under Ohmic contacts of devices behaved like a capacitance-resistance coupled network, with a decrease in amplitude and phase shift of the potential as a function of operating voltage frequency. This phenomenon was used to extract a value of 0.6 M Omega/square for sheet resistance of the AIN nucleation layer at the GaN/SiC interface from the characteristic RC value of the network. This demonstrates the effectiveness of this voltage probe technique as a non-invasive method of characterizing nucleation layers.
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| 2. |
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| 3. |
- Pomeroy, J, et al.
(författare)
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Improved GaN-on-SiC transistor thermal resistance by systematic nucleation layer growth optimization
- 2013
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Ingår i: Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE. - : IEEE. - 1550-8781. - 9781479905836 ; , s. 1-4
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Konferensbidrag (refereegranskat)abstract
- Impressive power densities have been demonstrated for GaN-on-SiC based high-power high-frequency transistors, although further gains can be achieved by further minimizing the device thermal resistance. A significant 10-30% contribution to the total device thermal resistance originates from the high defect density AlN nucleation layer at the GaN/SiC interface. This thermal resistance contribution was successfully reduced by performing systematic growth optimization, investigating growth parameters including: Substrate pretreatment temperature, growth temperature and deposition time. Interfacial thermal resistance, characterized by time resolved Raman thermography measurements AlGaN/GaN HEMT structures, were minimized by using a substrate pretreatment and growth temperature of 1200 °C. Reducing the AlN thickness from 105 nm (3.3×10-8W/m2K) to 35 nm (3.3×10-8 W/m2K), led to a ~2.5× interfacial thermal resistance reduction and the lowest value reported for a standard AlGaN/GaN HEMT structure.
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