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Träfflista för sökning "WFRF:(Kudrawiec R) srt2:(2003-2004)"

Sökning: WFRF:(Kudrawiec R) > (2003-2004)

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1.
  • Kudrawiec, R., et al. (författare)
  • The nature of optical transitions in Ga0.64In0.36As1-xNx/GaAs single quantum wells with low nitrogen content (x <= 0.008)
  • 2003
  • Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 127:10-sep, s. 613-618
  • Tidskriftsartikel (refereegranskat)abstract
    • Ga0.64In0.36As1-xNx/GaAs single quantum wells (SQWs) with low nitrogen content have been investigated by both photoluminescence (PL) and photoreflectance (PR) at low and room temperatures. A huge broadening of the PR features has been observed at low temperature and a decrease in this broadening with the temperature increase was detected. This effect and the nature of the optical transitions observed in absorption and emission can be explained using a model which assumes band gap variation due to different nitrogen nearest-neighbour environments (different configurations). In the framework of this model, the large Stokes shift observed for quantum wells (QWs) with smooth interfaces is explained as originating from the potential fluctuations of conduction band edge in the QW layer.
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2.
  • Misiewicz, J., et al. (författare)
  • Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
  • 2004
  • Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 16:31, s. S3071-S3094
  • Tidskriftsartikel (refereegranskat)abstract
    • In this paper, we present the application of photoreflectance (PR) spectroscopy to investigate the energy level structure of GaInNAs-based quantum wells (QWs). Series of single GaInNAs/GaAs QWs with different nitrogen and indium contents are analysed. The electron effective mass (m(e)(*)) and conduction e band offset (Q(C)) are determined and compared with the literature data. The Q(C) in GaInNAs/GaAs system in the range of investigated GaInNAs content (28-41% of In, 0.3-5.3% of N) has been found to be almost the same as for GaInAs/GaAs system, i.e. Q(C) approximate to 0.8. In addition, the energy level structure for the step-like GaInNAs/Ga(In)NAs/GaAs QWs tailored at 1.3 and 1.55 mum and the Sb-containing Ga(In)NAs/GaAs QWs is investigated. Also, the character of PR transitions, the influence of rapid thermal annealing (RTA) on the energy level structure, and the influence of the carrier localization effect on the efficiency of PR photomodulation are discussed.
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