| 1. |
|
|
| 2. |
- Boschi, Alex, et al.
(författare)
-
Mesoscopic 3D Charge Transport in Solution-Processed Graphene-Based Thin Films: A Multiscale Analysis
- 2023
-
Ingår i: Small. - 1613-6810 .- 1613-6829. ; 19:42
-
Tidskriftsartikel (refereegranskat)abstract
- Graphene and related 2D material (GRM) thin films consist of 3D assembly of billions of 2D nanosheets randomly distributed and interacting via van der Waals forces. Their complexity and the multiscale nature yield a wide variety of electrical characteristics ranging from doped semiconductor to glassy metals depending on the crystalline quality of the nanosheets, their specific structural organization ant the operating temperature. Here, the charge transport (CT) mechanisms are studied that are occurring in GRM thin films near the metal-insulator transition (MIT) highlighting the role of defect density and local arrangement of the nanosheets. Two prototypical nanosheet types are compared, i.e., 2D reduced graphene oxide and few-layer-thick electrochemically exfoliated graphene flakes, forming thin films with comparable composition, morphology and room temperature conductivity, but different defect density and crystallinity. By investigating their structure, morphology, and the dependence of their electrical conductivity on temperature, noise and magnetic-field, a general model is developed describing the multiscale nature of CT in GRM thin films in terms of hopping among mesoscopic bricks, i.e., grains. The results suggest a general approach to describe disordered van der Waals thin films.
|
|
| 3. |
- Ghasemi, Shima, 1993, et al.
(författare)
-
Exploring the impact of select anchor groups for norbornadiene/quadricyclane single-molecule switches
- 2023
-
Ingår i: Journal of Materials Chemistry C. - 2050-7534 .- 2050-7526. ; 11:44, s. 15379-15776
-
Tidskriftsartikel (refereegranskat)abstract
- To achieve the ultimate limit of device miniaturization, it is necessary to have a comprehensive understanding of the structure–property relationship in functional molecular systems used in single-molecule electronics. This study reports the synthesis and characterization of a novel series of norbornadiene derivatives capped with thioether and thioester anchor groups. Utilizing the mechanically controllable break junction technique, the impact of these capping groups on conductance across single-molecule junctions is investigated. Among the selection of anchor groups, norbornadiene capped with thioacetate and tert-butyl groups exhibits higher conductance (G ≈ 4 × 10−4 G0) compared to methyl thioether (G ≈ 2 × 10−4 G0). Electronic transmission through the considered set of single-molecule junctions has been simulated. The computational results for electron transport across these junctions align closely with the experimental findings, with the thioacetate- and tert-butyl-substituted systems outperforming the methyl thioether-capped derivative. In terms of junction stability, the methyl thioether-capped system is the most resilient, maintaining consistent conductance even after approximately 10 000 cycles. Meanwhile, the likelihood of observing molecular plateaus in both the thioacetate- and tert-butyl-substituted systems declines over time. These findings substantially advance both the design and understanding of functional molecular systems in the realm of single-molecule electronics, particularly in the context of molecular photoswitches.
|
|
| 4. |
- Shetty, Naveen, 1988, et al.
(författare)
-
Ultralow 1/f noise in epigraphene devices
- 2024
-
Ingår i: Applied Physics Letters. - 0003-6951 .- 1077-3118. ; 124:9
-
Tidskriftsartikel (refereegranskat)abstract
- We report the lowest recorded levels of 1/ f noise for graphene-based devices, at the level of S V / V 2 = S I / I 2 = 4.4 × 10 − 16 (1/Hz), measured at f = 10 Hz ( S V / V 2 = S I / I 2 < 10 − 16 1/Hz for f > 100 Hz) in large-area epitaxial graphene on silicon carbide (epigraphene) Hall sensors. This performance is made possible through the combination of high material quality, low contact resistance achieved by edge contact fabrication process, homogeneous doping, and stable passivation of the graphene layer. Our study explores the nature of 1/ f noise as a function of carrier density and device geometry and includes data from Hall sensors with device area range spanning over six orders of magnitude, with characteristic device length ranging from L = 1 μm to 1 mm. In optimized graphene Hall sensors, we demonstrate arrays to be a viable route to improve further the magnetic field detection: a simple parallel connection of two devices displays record-high magnetic field sensitivity at room temperature, with minimum detectable magnetic field levels down to B min = 9.5 nT/√Hz. The remarkable low levels of 1/ f noise observed in epigraphene devices hold immense capacity for the design and fabrication of scalable epigraphene-based sensors with exceptional performance.
|
|
| 5. |
- Shetty, Naveen, 1988, et al.
(författare)
-
Ultralow 1/f noise in epigraphene devices
- 2024
-
Ingår i: Applied Physics Letters. - : American Institute of Physics Inc.. - 0003-6951 .- 1077-3118. ; 124:9
-
Tidskriftsartikel (refereegranskat)abstract
- We report the lowest recorded levels of 1/ f noise for graphene-based devices, at the level of S V / V 2 = S I / I 2 = 4.4 × 10 − 16 (1/Hz), measured at f = 10 Hz ( S V / V 2 = S I / I 2 < 10 − 16 1/Hz for f > 100 Hz) in large-area epitaxial graphene on silicon carbide (epigraphene) Hall sensors. This performance is made possible through the combination of high material quality, low contact resistance achieved by edge contact fabrication process, homogeneous doping, and stable passivation of the graphene layer. Our study explores the nature of 1/ f noise as a function of carrier density and device geometry and includes data from Hall sensors with device area range spanning over six orders of magnitude, with characteristic device length ranging from L = 1 μm to 1 mm. In optimized graphene Hall sensors, we demonstrate arrays to be a viable route to improve further the magnetic field detection: a simple parallel connection of two devices displays record-high magnetic field sensitivity at room temperature, with minimum detectable magnetic field levels down to B min = 9.5 nT/√Hz. The remarkable low levels of 1/ f noise observed in epigraphene devices hold immense capacity for the design and fabrication of scalable epigraphene-based sensors with exceptional performance. © 2024 Author(s).
|
|
