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- Wagner, J, et al.
(författare)
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Di-Carbon defects in annealed highly carbon doped GaAs
- 1997
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 78:1, s. 74-77
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Tidskriftsartikel (refereegranskat)abstract
- Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and 1674 cm -1 in GaAs codoped with 12C and 13C after annealing at 850 °C with concomitant loss of vibrational scattering from CAs. The frequencies agree with results of ab initio theory for a C-C split interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced CAs) atom by an undisplaced CAs acceptor. Other mechanisms of carrier loss are inferred since a weaker Raman triplet is detected at 1859, 1824, and 1788 cm -1 from a different C-C complex.
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