| 1. |
- Li, Jiantong, et al.
(författare)
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Ink-jet printed thin-film transistors with carbon nanotube channels shaped in long strips
- 2011
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 109:8, s. 084915-
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Tidskriftsartikel (refereegranskat)abstract
- The present work reports on the development of a class of sophisticated thin-film transistors (TFTs) based on ink-jet printing of pristine single-walled carbon nanotubes (SWCNTs) for the channel formation. The transistors are manufactured on oxidized silicon wafers and flexible plastic substrates at ambient conditions. For this purpose, ink-jet printing techniques are developed with the aim of high-throughput production of SWCNT thin-film channels shaped in long strips. Stable SWCNT inks with proper fluidic characteristics are formulated by polymer addition. The present work unveils, through Monte Carlo simulations and in light of heterogeneous percolation, the underlying physics of the superiority of long-strip channels for SWCNT TFTs. It further predicts the compatibility of such a channel structure with ink-jet printing, taking into account the minimum dimensions achievable by commercially available printers. The printed devices exhibit improved electrical performance and scalability as compared to previously reported ink-jet printed SWCNT TFTs. The present work demonstrates that ink-jet printed SWCNT TFTs of long-strip channels are promising building blocks for flexible electronics.
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| 2. |
- Liu, Zhiying, et al.
(författare)
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On Gate Capacitance of Nanotube Networks
- 2011
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Ingår i: IEEE Electron Device Letters. - : IEEE. - 0741-3106 .- 1558-0563. ; 32:5, s. 641-643
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Tidskriftsartikel (refereegranskat)abstract
- This letter presents a systematic investigation of the gate capacitance C-G of thin-film transistors (TFTs) based on randomly distributed single-walled carbon nanotubes (SWCNTs) in the channel. In order to reduce false counting of SWCNTs that do not contribute to current conduction, C-G is directly measured on the TFTs using a well-established method for MOSFETs. Frequency dispersion of C-G is observed, and it is found to depend on the percolation behavior in SWCNT networks. This dependence can be accounted for using an RC transmission line model. These results are of important implications for the determination of carrier mobility in nanoparticle-based TFTs.
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| 3. |
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| 4. |
- Qu, Minni, et al.
(författare)
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Charge-Injection-Induced Time Decay in Carbon Nanotube Network-Based FETs
- 2010
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 31:10, s. 1098-1100
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Tidskriftsartikel (refereegranskat)abstract
- A voltage-pulse method is utilized to investigate the charge-injection-induced time decay of the source-drain current of field-effect transistors with randomly networked single-walled carbon nanotubes (CNTs) as the conduction channel. The relaxation of trapped carriers in the CNT networks can be accounted for by assuming two exponential decays occurring simultaneously. The slow decay is characterized by a time constant comparable to literature data obtained for a carrier recombination in the semiconducting CNTs. The faster decay with a time constant that has a smaller order of magnitude is attributed to the annihilation of trapped carriers in metallic CNTs or at metal-CNT contacts. Both time constants are gate-bias dependent.
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| 5. |
- Li, Jiantong, et al.
(författare)
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Conductivity exponents in stick percolation
- 2010
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Ingår i: Physical Review E. Statistical, Nonlinear, and Soft Matter Physics. - : American Physical Society. - 1063-651X .- 1095-3787. ; 81:021120
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Tidskriftsartikel (refereegranskat)abstract
- On the basis of Monte Carlo simulations, the present work systematically investigates how conductivity exponents depend on the ratio of stick-stick junction resistance to stick resistance for two-dimensional stick percolation. Simulation results suggest that the critical conductivity exponent extracted from size-dependent conductivities of systems exactly at the percolation threshold is independent of the resistance ratio and has a constant value of 1.280 +/- 0.014. In contrast, the apparent conductivity exponent extracted from density-dependent conductivities of systems well above the percolation threshold monotonically varies with the resistance ratio, following an error function, and lies in the vicinity of the critical exponent.
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| 6. |
- Li, Jiantong, 1980-
(författare)
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Ink-jet printing of thin film transistors based on carbon nanotubes
- 2010
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- The outstanding electrical and mechanical properties of single-walled carbon nanotubes (SWCNTs) may offer solutions to realizing high-mobility and high-bendability thin-film transistors (TFTs) for the emerging flexible electronics. This thesis aims to develop low-cost ink-jet printing techniques for high-performance TFTs based on pristine SWCNTs. The main challenge of this work is to suppress the effects of “metallic SWCNT contamination” and improve the device electrical performance. To this end, this thesis entails a balance between experiments and simulations. First, TFTs with low-density SWCNTs in the channel region are fabricated by utilizing standard silicon technology. Their electrical performance is investigated in terms of throughput, transfer characteristics, dimensional scaling and dependence on electrode metals. The demonstrated insensitivity of electrical performance to the electrode metals lifts constrains on choosing metal inks for ink-jet printing. Second, Monte Carlo models on the basis of percolation theory have been established, and high-efficiency algorithms have been proposed for investigations of large-size stick systems in order to facilitate studies of TFTs with channel length up to 1000 times that of the SWCNTs. The Monte Carlo simulations have led to fundamental understanding on stick percolation, including high-precision percolation threshold, universal finite-size scaling function, and dependence of critical conductivity exponents on assignment of component resistance. They have further generated understanding of practical issues regarding heterogeneous percolation systems and the doping effects in SWCNT TFTs. Third, Monte Carlo simulations are conducted to explore new device structures for performance improvement of SWCNT TFTs. In particular, a novel device structure featuring composite SWCNT networks in the channel is predicted by the simulation and subsequently confirmed experimentally by another research group. Through Monte Carlo simulations, the compatibility of previously-proposed long-strip-channel SWCNT TFTs with ink-jet printing has also been demonstrated. Finally, relatively sophisticated ink-jet printing techniques have been developed for SWCNT TFTs with long-strip channels. This research spans from SWCNT ink formulation to device design and fabrication. SWCNT TFTs are finally ink-jet printed on both silicon wafers and flexible Kapton substrates with fairly high electrical performance.
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| 7. |
- Lemme, Max C., et al.
(författare)
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Graphene for More Moore and More Than Moore applications
- 2012
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Ingår i: IEEE Silicon Nanoelectronics Workshop, SNW. - : IEEE. - 9781467309943 ; , s. 6243322-
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Konferensbidrag (refereegranskat)abstract
- Graphene has caught the attention of the electronic device community as a potential future option for More Moore and More Than Moore devices and applications. This is owed to its remarkable material properties, which include ballistic conductance over several hundred nanometers or charge carrier mobilities of several 100.000 cm 2/Vs in pristine graphene. Furthermore, standard CMOS technology may be applied to graphene in order to make devices. Integrated graphene devices, however, are performance limited by scattering due to defects in the graphene and its dielectric environment [1, 2] and high contact resistance [3, 4]. In addition, graphene has no energy band gap (Figure 1) and hence graphene MOSFETs (GFETs) cannot be switched off, but instead show ambipolar behaviour [5]. This has steered interest away from logic to analog radio frequency (RF) applications [6, 7]. This talk will systematically compare the expected RF performance of realistic GFETs with current silicon CMOS technology [8]. GFETs slightly lag behind in maximum cut-off frequency F T,max (Figure 2) up to a carrier mobility of 3000 cm 2/Vs, where they can achieve similar RF performance as 65nm silicon FETs. While a strongly nonlinear voltage-dependent gate capacitance inherently limits performance, other parasitics such as contact resistance are expected to be optimized as GFET process technology improves.
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| 8. |
- Li, Jiantong, et al.
(författare)
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A simple route towards high-concentration surfactant-free graphene dispersions
- 2012
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Ingår i: Carbon. - : Elsevier BV. - 0008-6223 .- 1873-3891. ; 50:8, s. 3113-3116
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Tidskriftsartikel (refereegranskat)abstract
- A simple solvent exchange method is introduced to prepare high-concentration and surfactant-free graphene liquid dispersion. Natural graphite flakes are first exfoliated into graphene in dimethylformamide (DMF). DMF is then exchanged by terpineol through distillation, relying on their large difference in boiling points. Graphene can then be concentrated thanks to the volume difference between DMF and terpineol. The concentrated graphene dispersions are used to fabricate transparent conductive thin films, which possess comparable properties to those prepared by more complex methods.
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| 9. |
- Li, Jiantong, et al.
(författare)
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Corrected finite-size scaling in percolation
- 2012
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Ingår i: Physical Review E. Statistical, Nonlinear, and Soft Matter Physics. - 1539-3755 .- 1550-2376. ; 86:4, s. 040105-
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Tidskriftsartikel (refereegranskat)abstract
- This Rapid Communication proposes a comprehensive scaling theory for percolation, which clarifies the intrinsic nature of finite-size scaling and effectively addresses the finite-size effects. This theory applies to extensive systems, including especially the explosive percolation. It is suggested that explosive percolation shares the same scaling law as normal percolation, but may suffer from more severe finite-size effects. Remarkably, in contrast to previous studies, relying on the framework of our theory, the present Rapid Communication suggests that for all systems, the universal scaling functions do not depend on the boundary conditions.
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| 10. |
- Li, Jiantong, et al.
(författare)
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Efficient inkjet printing of graphene
- 2013
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Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 25:29, s. 3985-3992
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Tidskriftsartikel (refereegranskat)abstract
- An efficient and mature inkjet printing technology is introduced for mass production of coffee-ring-free patterns of high-quality graphene at high resolution (unmarked scale bars are 100 μm). Typically, several passes of printing and a simple baking allow fabricating a variety of good-performance electronic devices, including transparent conductors, embedded resistors, thin film transistors, and micro-supercapacitors.
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