| 1. |
- Adcox, K, et al.
(författare)
-
PHENIX detector overview
- 2003
-
Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - 0167-5087. ; 499:2-3, s. 469-479
-
Tidskriftsartikel (refereegranskat)abstract
- The PHENIX detector is designed to perform a broad study of A-A, p-A, and p-p collisions to investigate nuclear matter under extreme conditions. A wide variety of probes, sensitive to all timescales, are used to study systematic variations with species and energy as well as to measure the spin structure of the nucleon. Designing for the needs of the heavy-ion and polarized-proton programs has produced a detector with unparalleled capabilities. PHENIX measures electron and muon pairs, photons, and hadrons with excellent energy and momentum resolution. The detector consists of a large number of subsystems that are discussed in other papers in this volume. The overall design parameters of the detector are presented. (C) 2002 Elsevier Science B.V. All rights reserved.
|
|
| 2. |
- Adler, SS, et al.
(författare)
-
PHENIX on-line systems
- 2003
-
Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - 0167-5087. ; 499:2-3, s. 560-592
-
Tidskriftsartikel (refereegranskat)abstract
- The PHENIX On-Line system takes signals from the Front End Modules (FEM) on each detector subsystem for the purpose of generating events for physics analysis. Processing of event data begins when the Data Collection Modules (DCM) receive data via fiber-optic links from the FEMs. The DCMs format and zero suppress the data and generate data packets. These packets go to the Event Builders (EvB) that assemble the events in final form. The Level-1 trigger (LVL1) generates a decision for each beam crossing and eliminates uninteresting events. The FEMs carry out all detector processing of the data so that it is delivered to the DCMs using a standard format. The FEMs also provide buffering for LVL1 trigger processing and DCM data collection. This is carried out using an architecture that is pipelined and deadtimeless. All of this is controlled by the Master Timing System (MTS) that distributes the RHIC clocks. A Level-2 trigger (LVL2) gives additional discrimination. A description of the components and operation of the PHENIX On-Line system is given and the solution to a number of electronic infrastructure problems are discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
|
|
| 3. |
|
|
| 4. |
|
|
| 5. |
|
|
| 6. |
- Wang, L. W., et al.
(författare)
-
Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen
- 2000
-
Ingår i: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 33:12, s. 1551-1555
-
Tidskriftsartikel (refereegranskat)abstract
- Silicon carbide is an important wide-band-gap semiconductor for high temperature, high-voltage, high-power and high-frequency devices. Electrical isolation is an important aspect for device applications. In this report, oxygen ions, 70 keV with doses ranging from 5 x 10(13) to 5 x 10(15) cm(-2), have been implanted into n-type 6H-SiC to investigate the possibility of forming a high-resistive layer. The damage behaviour and internal stress were checked by Rutherford backscattering spectroscopy and channelling, and an x-ray rocking curve, respectively. Atomic force microscope observations revealed that the surface morphology is quite sensitive to the implantation even at a dose of 1 x 10(14) cm(-2) After annealing in nitrogen at 1200 degrees C, no remarkable damage recovery could be seen if the deposit damage energy is over the critical value. Schottky structures of Au/SiC have been fabricated on the annealed samples and I-V curves of metal/SiC/InGeNi were measured at room temperature at both forward and reverse bias; the electrical isolation effect was observed at proper implantation dosages. The results indicated that there exists a dose window for electrical isolation.
|
|
| 7. |
- Wang, L. W., et al.
(författare)
-
Structural and electrical characteristics of oxygen-implanted 6H-SiC
- 2000
-
Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 169, s. 1-5
-
Tidskriftsartikel (refereegranskat)abstract
- Silicon carbide is an important wide band gap semiconductor for high-temperature, high-voltage, high-power and high-frequency devices. Ion implantation is an important aspect for both fundamental research and device applications. In this report, oxygen ions, 70 keV with dose ranging from 5 x 10(13) to 5 x 10(15) cm(-2), have been implanted into n-type BH-SIC. The damage behavior and internal stress were checked by Rutherford backscattering spectroscopy and channeling and X-rays rocking curve, respectively. Atomic force microscope observations revealed that the surface morphology is quite sensitive to the implantation even at a dose of 1 x 10(14)/cm(-2). After annealing in nitrogen at 1200 degrees C, no remarkable damage recovery could be seen if the deposit damage energy is above the critical value. Schottky structures of Au/SiC have been fabricated and I-V curves of metal/SiC/InGeNi were measured at room temperature at both forward and reverse bias, electrical isolation effect was observed at proper implantation dose. The results indicated that there exists a dose window for electrical isolations. X-ray photoelectron spectroscopy (XPS) confirmed the formation of silicon oxide and CO due to oxygen implantation. In case of high-dose ion implantation, graphite phase was detected.
|
|
