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| 2. |
- Buyanova, Irina A., et al.
(author)
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Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures
- 2000
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In: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 72:2, s. 146-149
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Journal article (peer-reviewed)abstract
- Photoluminescence (PL) spectroscopy is employed to investigate radiative defects created in Si during electron-irradiation at elevated temperatures. The use of high temperature during electron irradiation has been found to affect considerably the defect formation process. The effect critically depends on the temperature of the irradiation as well as doping of the samples. For carbon-lean Si wafers high temperature electron irradiation stimulates the formation of extended defects, such as dislocations and precipitates. For carbon-rich Si wafers the increase of irradiation temperature up to 300°C enhances the formation of the known carbon-related defects. In addition, several new excitonic PL lines were observed after electron irradiation at T = 450°C. The dominant new PL center gives rise to a BE PL emission at 0.961 eV. The electronic structure of the 0.961 eV defect is discussed based on temperature-dependent and magneto-optical studies.
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| 3. |
- Hermansson, J., et al.
(author)
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Complexes of the self-interstitial with oxygen in irradiated silicon : A new assignment of the 936 cm-1 band
- 2001
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In: Physica. B, Condensed matter. - 0921-4526 .- 1873-2135. ; 302-303, s. 188-192
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Conference paper (other academic/artistic)abstract
- Three vibrational infrared absorption bands at about 936, 944 and 956 cm-1 appear commonly in spectra of Czochralski-grown silicon irradiated at low temperatures. All three bands have earlier been assigned to local vibrational modes related to oxygen in the complex of the silicon and the oxygen interstitials (IOi). However, it is shown that such an assignment of the 936 cm-1 band clearly is inconsistent with many facts and observations and that the band is most likely due to oxygen vibrations in the Si interstitial pair and interstitial oxygen complex, I2Oi. © 2001 Published by Elsevier Science B.V.
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| 5. |
- Lindstrom, J.L., et al.
(author)
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Defect engineering in Czochralski silicon by electron irradiation at different temperatures
- 2002
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In: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 186:1-4, s. 121-125
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Journal article (peer-reviewed)abstract
- Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electrons in a wide range of temperatures (80-900 K) have been performed. The samples with different contents of oxygen (16O,18O) and carbon (12C,13C) isotopes were investigated. The main defect reactions are found to depend strongly on irradiation temperature and dose, as well as on impurity content and pre-history of the samples. Some new radiation-induced defects are revealed after irradiation at elevated temperatures as well as after a two-step (hot+room-temperature (RT)) irradiation. © 2002 Elsevier Science B.V. All rights reserved.
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| 6. |
- Lindstrom, J.L., et al.
(author)
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Interaction between self-interstitials and the oxygen dimer in silicon
- 2001
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In: Physica. B, Condensed matter. - 0921-4526 .- 1873-2135. ; 308-310, s. 284-289
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Journal article (peer-reviewed)abstract
- Interactions between the oxygen dimer (O2i) and silicon self-interstitials (I) and vacancies (V) have been studied in Czochralski-grown silicon (Cz-Si) crystals using infrared absorption and deep level transient spectroscopies. The focus in this report is on reactions of O2i with I. The first step in this interaction is found to be the formation of a self-interstitial-dioxygen centre (IO2i) with oxygen-related local vibrational mode (LVM) bands at 922 and 1037 cm-1. During the second formation step, another centre, I2O2i, with LVM bands at 918 and 1034 cm-1 is suggested to appear. A Si-related band at about 545 cm-1 is also assigned to both the IO2i and I2O2i centres. The IO2i centre is found to be electrically active with an acceptor level at Ec - 0.11 eV. The both defects, IO2i and I2O2i, are stable at room temperature and anneal out at about 400 and 550 K, respectively. © 2001 Elsevier Science B.V. All rights reserved.
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| 7. |
- Murin, L.I., et al.
(author)
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Early stages of oxygen clustering in hydrogenated Cz-Si : IR absorption studies
- 2001
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In: Physica. B, Condensed matter. - 0921-4526 .- 1873-2135. ; 302-303, s. 180-187
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Conference paper (other academic/artistic)abstract
- The formation kinetics of small oxygen clusters in hydrogenated Si has been studied by means of infrared absorption measurements. Hydrogen was introduced into the crystals by in-diffusion from H2 gas at 1200-1300°C. The samples were heated at temperatures in the range of 280-370°C for different durations. At initial stages of heat-treatment, enormous generation rates of the oxygen dimer have been observed in hydrogenated samples. This indicates highly enhanced diffusion of the interstitial oxygen atoms. The maximum achievable concentration of the dimers is found to be limited by their dissociation rate even at temperatures of about 300°C, while in as-grown crystals the capture processes are known to be dominant in this temperature region. An explanation of this phenomenon is presented. © 2001 Published by Elsevier Science B.V.
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| 8. |
- Murin, L.I., et al.
(author)
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Isotopic effects on vibrational modes of thermal double donors in Si and Ge
- 2001
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In: Physica. B, Condensed matter. - 0921-4526 .- 1873-2135. ; 308-310, s. 290-293
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Journal article (peer-reviewed)abstract
- The local vibrational modes of thermal double donors in Si and Ge are investigated by FTIR and ab initio modelling. At most, two oxygen modes are detected from each donor, which exhibit regular shifts with increasing donor number. By using mixtures of 16O and 18O, it is found that in Si the upper band does not yield any new modes suggesting that any oxygen atom is decoupled from any other. However, the lower frequency bands exhibit unique mixed modes proving for the first time that oxygen atoms are coupled together and in close spatial proximity. Ab initio calculations demonstrate that the modes and their isotopic shifts are consistent with a model involving two parallel chains of oxygen atoms linking second neighbour Si atoms, terminated by O-atoms close to the normal position for interstitial O. © 2001 Elsevier Science B.V. All rights reserved.
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