1. |
- Sun, Jie, 1977, et al.
(författare)
-
Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride
- 2011
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 98:25
-
Tidskriftsartikel (refereegranskat)abstract
- Large-area uniform carbon films with graphene-like properties are synthesized by chemical vapor deposition directly on Si3N4/Si at 1000 degrees C without metal catalysts. The as deposited films are atomically thin and wrinkle- and pinhole-free. The film thickness can be controlled by modifying the growth conditions. Raman spectroscopy confirms the sp(2) graphitic structures. The films show ohmic behavior with a sheet resistance of similar to 2.3-10.5 k Omega/square at room temperature. An electric field effect of similar to 2-10% (V-G=-20 V) is observed. The growth is explained by the self-assembly of carbon clusters from hydrocarbon pyrolysis. The scalable and transfer-free technique favors the application of graphene as transparent electrodes.
|
|
2. |
- Svensson, Johannes, et al.
(författare)
-
Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates
- 2011
-
Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 11:9, s. 3569-3575
-
Tidskriftsartikel (refereegranskat)abstract
- Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.
|
|
3. |
- Tarasov, Mikhail, 1954, et al.
(författare)
-
Family of graphene-based superconducting devices
- 2011
-
Ingår i: JETP Letters. - 1090-6487 .- 0021-3640. ; 94:4, s. 329-332
-
Tidskriftsartikel (refereegranskat)abstract
- A family of highly sensitive devices based on a graphene nanobridge and superconducting electrodes has been developed, manufactured, and examined. These devices can be used to create a graphene-based integral receiver. A cold-electron bolometer prototype with superconductor-insulator-normal metal tunnel junctions has been studied. Its response to a change in the temperature and external microwave radiation has been measured. A superconducting quantum interferometer with a graphene strip as a weak coupling between superconducting electrodes has been examined. The corresponding modulation of the voltage by a magnetic field at a given current has been measured. The effect of the gate voltage on the resistance of graphene has been analyzed for these samples. To confirm that graphene is single-layer, measurements with the reference samples were performed in high magnetic fields, displaying the half-integer quantum Hall effect.
|
|