| 1. |
- Radamson, Henry H., et al.
(författare)
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The Challenges of Advanced CMOS Process from 2D to 3D
- 2017
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Ingår i: Applied Sciences. - : MDPI AG. - 2076-3417. ; 7:10
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Forskningsöversikt (refereegranskat)abstract
- The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.
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| 2. |
- Wang, Guilei, et al.
(författare)
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Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors
- 2017
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Ingår i: Nanoscale Research Letters. - : Springer. - 1931-7573 .- 1556-276X. ; 12
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Tidskriftsartikel (refereegranskat)abstract
- In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has been presented. Selective Si1-xGex growth (0.35 <= x <= 0.40) with boron concentration of 1-3 x 10(20) cm(-3) was used to elevate the source/drain. The main focus was optimization of the growth parameters to improve the epitaxial quality where the high-resolution x-ray diffraction (HRXRD) and energy dispersive spectrometer (EDS) measurement data provided the key information about Ge profile in the transistor structure. The induced strain by SiGe layers was directly measured by x-ray on the array of transistors. In these measurements, the boron concentration was determined from the strain compensation of intrinsic and boron-doped SiGe layers. Finally, the characteristic of transistors were measured and discussed showing good device performance.
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| 3. |
- Wang, Guilei, et al.
(författare)
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pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology
- 2017
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Ingår i: Nanoscale Research Letters. - : SPRINGER. - 1931-7573 .- 1556-276X. ; 12
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH4 and B2H6 precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the performance of devices featuring ALD W using SiH4 is superior to that of devices featuring ALD W using B2H6. This disparity in device performance results from different metal gate-induced strain from ALD W using SiH4 and B2H6 precursors, i.e. tensile stresses for SiH4 (similar to 2.4 GPa) and for B2H6 (similar to 0.9 GPa).
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