| 1. |
- Liu, Qingbo, et al.
(författare)
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Effects of carbon pre-germanidation implant into Ge on the thermal stability of NiGe films
- 2015
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 133, s. 6-10
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the effects of carbon pre-germanidation implant into Ge on the properties of NiGe films were systematically investigated. NiGe films with carbon pre-germanidation implant to doses varying from 0 to 6 x 10(15) cm(-2) were characterized by means of sheet resistance measurement, X-ray diffraction (XRD), scanning electron microscopy (SEM), cross-sectional transmission electron microscope (X-TEM) and secondary ion mass spectroscopy (SIMS). The presence of C atoms is proved to significantly enhance the thermal stability of NiGe by about 100 degrees C as well as to change the preferred orientations of polycrystalline NiGe. The homogenous redistribution of C atoms within NiGe films and the segregation of C atoms at the NiGe/Ge interface is responsible for the improved thermal stability of NiGe films.
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| 2. |
- Liu, Qingbo, et al.
(författare)
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Effects of Carbon Pre-Germanidation Implantation on the Thermal Stability of NiGe and Dopant Segregation on Both n- and p-Type Ge Substrate
- 2015
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Ingår i: ECS Journal of Solid State Science and Technology. - : The Electrochemical Society. - 2162-8769 .- 2162-8777. ; 4:5, s. P119-P123
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the effects of carbon pre-geramanidation implantation on the thermal stability of NiGe and dopant segregation on both ntype and p-type Ge substrate were investigated systematically. As-prepared NiGe films with carbon pre-germanidation implantation to different doses were characterized by means of sheet resistance measurement, X-ray diffraction (XRD), scanning electron microscopy (SEM), cross-sectional transmission electron microscope (X-TEM) and secondary ion mass spectroscopy (SIMS). The presence of carbon is proved to improve the thermal stability of NiGe formed on both n-and p-type Ge significantly, as well as to lead to dopant segregation (DS) of P and B at the NiGe/Ge interface. The homogeneous distribution of C within NiGe films and stuffing of C atoms at the NiGe/Ge interface is responsible for the enhanced thermal stability of NiGe and DS of P and B during germanidation process. (C) The Author(s) 2015. Published by ECS. All rights reserved.
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| 3. |
- Liu, Qingbo, et al.
(författare)
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Improvement of the Thermal Stability of Nickel Stanogermanide by Carbon Pre-Stanogermanidation Implant into GeSn Substrate
- 2015
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Ingår i: ECS Journal of Solid State Science and Technology. - : The Electrochemical Society. - 2162-8769 .- 2162-8777. ; 4:3, s. P67-P70
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Tidskriftsartikel (refereegranskat)abstract
- An effective method to improve the thermal stability of Ni(Ge1-xSnx) by carbon pre-stanogermanidation implant into GeSn substrate is investigated systematically. As-prepared samples were characterized by means of sheet resistance measurement, X-ray diffraction (XRD), scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (X-TEM) and secondary ions mass spectroscopy (SIMS). The incorporation of carbon leads to significantly improved thermal stability of Ni(Ge1-xSnx) by about 100 degrees C as well as tends to change the preferred orientations of polycrystalline Ni(Ge1-xSnx). The robust thermal stability can be attributed to the segregation of C in grain boundaries and at Ni(Ge1-xSnx)/GeSn interface after stanogermanidation.
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| 4. |
- Wen, Qingbo, et al.
(författare)
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Mechanical properties and electromagnetic shielding performance of single-source-precursor synthesized dense monolithic SiC/HfCxN1-x/C ceramic nanocomposites
- 2019
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Ingår i: Journal of Materials Chemistry C. - : Royal Society of Chemistry (RSC). - 2050-7526 .- 2050-7534. ; 7:34, s. 10683-10693
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Tidskriftsartikel (refereegranskat)abstract
- For the first time, single-source-precursor synthesized dense monolithic SiC/HfCxN1-x/C ceramic nanocomposites with outstanding electromagnetic (EM) shielding performance at temperatures up to 600 degrees C are reported. The total shielding effectiveness (SET) of the SiC/HfCxN1-x/C monolith is >40 dB at 600 degrees C, which is superior than most of the reported EM shielding materials under the same conditions. Compared with a Hf-free SiC/C monolith, the SiC/HfCxN1-x/C monolith possesses superior EM shielding performance due to the presence of a highly conductive HfCxN1-x phase. Moreover, the HfCxN1-x-particles are covered by a carbon layer forming core-shell nanoparticles connected with graphite-like carbon ribbons, which result in electrically conductive networks within the semiconducting beta-SiC matrix. In addition, the hardness, Young's modulus and flexural strength of the dense SiC/HfCxN1-x/C monolith are measured to be 29 +/- 4 GPa, 381 +/- 29 GPa and 320 +/- 25 MPa, respectively. The outstanding EM shielding performance combined with excellent mechanical properties of the dense monolithic SiC/HfCxN1-x/C nanocomposites provides a novel strategy to fabricate EM shielding materials for applications in harsh environments and/or under high mechanical load.
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