| 1. |
- Bengtsson, Stefan, 1961, et al.
(författare)
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SPFM pre-cleaning for formation of silicon interfaces by wafer bonding
- 1997
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Ingår i: Science and Technology of Semiconductor Surface Preparation. Symposium. ; , s. 267-
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Konferensbidrag (refereegranskat)abstract
- The use of H2SO4-H2O2-HF (SPFM) at low HF concentrations (10 to 1000 ppm) has been investigated as the preparation procedure prior to formation of Si-Si interfaces by wafer bonding. The SPFM cleaning process makes it possible to form a hydrophilic (OH terminated) silicon surface, thereby achieving a spontaneous and strong room temperature bond. Electrical characterization using current vs. voltage and spreading resistance measurements shows that this cleaning procedure can be used to form Si-Si junctions with excellent electrical properties. Some of the problems related to hydrophobic wafer bonding can thus be circumvented by the proposed technique
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| 2. |
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| 3. |
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| 4. |
- Lindén, Ola, et al.
(författare)
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Radioimmunotherapy using 131I-labeled anti-CD22 monoclonal antibody (LL2) in patients with previously treated B-cell lymphomas
- 1999
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Ingår i: Clinical Cancer Research. - 1078-0432. ; 5:10 Suppl, s. 3287-3291
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Tidskriftsartikel (refereegranskat)abstract
- Experience in using rapidly internalizing antibodies, such as the anti-CD22 antibody, for radioimmunotherapy of B-cell lymphomas is still limited. The present study was conducted to assess the efficacy and toxicity of a 131I-labeled anti-CD22 monoclonal antibody (mAb), LL2, in patients with B-cell lymphomas failing first- or second-line chemotherapy. Eligible patients were required to have measurable disease, less than 25% B cells in unseparated bone marrow, and an uptake of 99mTc-labeled LL2Fab' in at least one lymphoma lesion on immunoscintigram. Eight of nine patients examined with immunoscintigraphy were unequivocally found to have an uptake, and therapy with 131I-labeled anti-CD22 [1330 MBq/m2 (36 mCi/m2)] preceded by 20 mg of naked anti-CD22 mAb was administered. Three patients achieved partial remission (duration, 12, 3, and 2 months), and one patient with progressive lymphoma showed stable disease for 17 months. Four patients exhibited progressive disease. The toxicity was hematological. Patients with subnormal counts of neutrophils or platelets before therapy seemed to be more at risk for hematological side effects. Radioimmunotherapy in patients with B-cell lymphomas using 131I-labeled mouse anti-CD22 can induce objective remission in patients with aggressive as well as indolent lymphomas who have failed prior chemotherapy.
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| 5. |
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| 6. |
- Ljungberg, Karin, et al.
(författare)
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Improved Direct Bonding of Si- and SiO2 surfaces by Cleaning in H2SO4:H2O2:HF
- 1995
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Ingår i: Appl. Phys. Lett. - 0003-6951. ; 67:5, s. 650-652
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Tidskriftsartikel (refereegranskat)abstract
- A method for silicon surface preparation prior to wafer bonding in presented. By cleaning thp wafers in a H2SO4:H2O2 mixture in which a small amount of HF is added, and then rinsing in H2O, the bonding behavior of the surfaces is improved, compared to ot
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| 7. |
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| 8. |
- Ljungberg, Karin, et al.
(författare)
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Modification of silicon surfaces with H2SO4:H2O2:HF and HNO3:HF for wafer bonding applications
- 1996
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Ingår i: JOURNAL OF THE ELECTROCHEMICAL SOCIETY. - 0013-4651. ; 143:5, s. 1709-1714
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Tidskriftsartikel (refereegranskat)abstract
- Two combinations of oxidizing and etching agents, H2SO4:H2O2:HF and HNO3:HF, have been used to modify silicon surfaces prior to wafer bonding. The chemical oxide thickness can be adjusted between 0 and 10 Angstrom by tuning the HF content of the mixtures
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| 9. |
- Ljungberg, Karin, et al.
(författare)
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Modification of silicon surfaces with H2SO4:H2O2:HF and HNO3:HF for wafer bonding applications
- 1995
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Ingår i: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications. ; , s. 163-
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Konferensbidrag (refereegranskat)abstract
- Two combinations of oxidizing and etching agents, H2SO4:H2O2:HF and HNO3:HF, have been used to modify silicon surfaces for wafer bonding. By tuning the HF-content of the mixtures, the chemical oxide thickness can be controlled between 0 and 10 Å. Using X-ray photoelectron spectroscopy it is found, that the chemical composition of the surfaces can also be controlled. Terminating species, which can be obtained by the described procedures, are OH, F, and H. Both the described cleaning procedures permit hydrophilic bonding, giving a high room temperature bond strength, with a minimum of interfacial oxide. Different bonded combinations of terminated surfaces were investigated, and it was found that bonding a mainly F-terminated, or a mainly OH-terminated, surface to an H-terminated surface, does not yield any higher bond strength than bonding two H-terminated surfaces
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| 10. |
- Ljungberg, Karin, et al.
(författare)
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Optimized cleaning processes for silicon wafer bonding
- 1996
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Ingår i: Proceedings of the Third International Symposium on Ultra Clean Processing of Silicon Surfaces. UCPSS '96. ; , s. 123-
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Konferensbidrag (refereegranskat)abstract
- The use of SPFM (H2SO4-H2O2-HF) at low HF concentrations (10-1000 ppm) has been investigated as a pre-cleaning procedure for silicon direct bonding. This cleaning procedure can be tuned to simultaneously give hydrophilic surface properties, ensuring good bondability, and excellent electric properties, crucial for the application of direct bonding in device applications
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