| 1. |
- Clark, Andrew G., et al.
(författare)
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Evolution of genes and genomes on the Drosophila phylogeny
- 2007
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Ingår i: Nature. - : Springer Science and Business Media LLC. - 0028-0836 .- 1476-4687. ; 450:7167, s. 203-218
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Tidskriftsartikel (refereegranskat)abstract
- Comparative analysis of multiple genomes in a phylogenetic framework dramatically improves the precision and sensitivity of evolutionary inference, producing more robust results than single-genome analyses can provide. The genomes of 12 Drosophila species, ten of which are presented here for the first time (sechellia, simulans, yakuba, erecta, ananassae, persimilis, willistoni, mojavensis, virilis and grimshawi), illustrate how rates and patterns of sequence divergence across taxa can illuminate evolutionary processes on a genomic scale. These genome sequences augment the formidable genetic tools that have made Drosophila melanogaster a pre-eminent model for animal genetics, and will further catalyse fundamental research on mechanisms of development, cell biology, genetics, disease, neurobiology, behaviour, physiology and evolution. Despite remarkable similarities among these Drosophila species, we identified many putatively non-neutral changes in protein-coding genes, non-coding RNA genes, and cis-regulatory regions. These may prove to underlie differences in the ecology and behaviour of these diverse species.
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| 2. |
- Gudmundsson, Valur, et al.
(författare)
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Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation
- 2009
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 30:5, s. 541-543
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Tidskriftsartikel (refereegranskat)abstract
- Schottky-barrier source/drain (SB-S/D) presents a promising solution to reducing parasitic resistance for device architectures such as fully depleted UTB, trigate, or FinFET. In this letter, a low-temperature process (<= 700 degrees C) with PtSi-based S/D is examined for the fabrication of n-type UTB and trigate FETs on SOI substrate (t(si) = 30 nm). Dopant segregation with As was used to achieve the n-type behavior at implantation doses of 1 (.) 10(15) and 5. 10(15) cm(-2). Similar results were found for UTB devices with both doses, but trigate devices with the larger dose exhibited higher on currents and smaller process variation than their lower dose counterparts.
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| 3. |
- Cheah, Seng Kian, et al.
(författare)
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Self-Supported Three-Dimensional Nanoelectrodes for Microbattery Applications
- 2009
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Ingår i: Nano letters (Print). - : American Chemical Society. - 1530-6984 .- 1530-6992. ; 9:9, s. 3230-3233
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Tidskriftsartikel (refereegranskat)abstract
- A nanostructured three-dimensional (3D) microbattery has been produced and cycled in a Li-ion battery. It consists of a current collector of aluminum nanorods, a uniform layer of 17 nm TiO2 covering the nanorods made using ALD, an electrolyte and metallic lithium counter electrode. The battery is electrochemically cycled more than 50 times. The increase in total capacity is 10 times when using a 3D architechture compared to a 2D system for the same footprint area.
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| 4. |
- Dezelah, Charles L., et al.
(författare)
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A low valent metalorganic precursor for the growth of tungsten nitride thin films by atomic layer deposition
- 2007
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Ingår i: Journal of Materials Chemistry. - : Royal Society of Chemistry (RSC). - 0959-9428 .- 1364-5501. ; 17:11, s. 1109-1116
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Tidskriftsartikel (refereegranskat)abstract
- The atomic layer deposition growth of tungsten nitride films was demonstrated using the precursors W-2(NMe2)(6) and ammonia with substrate temperatures between 150 and 250 degrees C. At 180 degrees C, surface saturative growth was achieved with W-2(NMe2)(6) pulse lengths of >= 2.0 s. The growth rates were between 0.74 and 0.81 angstrom cycle(-1) at substrate temperatures between 180 and 210 degrees C. Growth rates of 0.57 and 0.96 angstrom cycle(-1) were observed at 150 and 220 degrees C, respectively. In a series of films deposited at 180 degrees C, the film thicknesses varied linearly with the number of deposition cycles. Films grown at 180 and 210 degrees C exhibited resistivity values between 810 and 4600 mu Omega cm. Time-of-flight elastic recoil detection analysis on tungsten nitride films containing a protective AlN overlayer demonstrated slightly nitrogen-rich films relative to W2N, with compositions of W1.0N0.82C0.13O0.26H0.33 at 150 degrees C, W1.0N0.74C0.20O0.33H0.28 at 180 degrees C, and W1.0N0.82C0.33O0.18H0.23 at 210 degrees C. In the absence of an AlN overlayer, the oxygen and hydrogen levels were much higher, suggesting that the films degrade in the presence of ambient atmosphere. The as-deposited films were amorphous. Amorphous films containing a protective AlN overlayer were annealed to 600 - 800 degrees C under a nitrogen atmosphere. X-Ray diffraction patterns suggested that crystallization does not occur at or below 800 degrees C. Similar annealing of films that did not contain the AlN overlayer afforded X-ray diffraction patterns that were consistent with orthorhombic WO3. Atomic force microscopy showed root-mean-square surface roughnesses of 0.9, 0.8, and 0.7 nm for films deposited at 150, 180, and 210 degrees C, respectively.
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| 5. |
- Dezelah, Charles L., et al.
(författare)
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The Atomic Layer Deposition of HfO2 and ZrO2 using Advanced Metallocene Precursors and H2O as the Oxygen Source
- 2008
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 14:11-12, s. 358-365
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Tidskriftsartikel (refereegranskat)abstract
- The atomic layer deposition (ALD) of HfO2 and ZrO2 thin films is investigated using (MeCp)(2)HfMe2, (MCp)(2)Hf(OMe)(Me), (MeCp)(2)ZrMe2, and (MeCp)(2)Zr(OMe)(Me) as the precursors at deposition temperatures between 300 and 500 degrees C, with water vapor as the oxygen Source. A self-limiting growth mechanism is confirmed at 350 degrees C for all the metal precursors examined. The processes provide nearly stoichiometric HfO2 and ZrO2 films with carbon and hydrogen concentrations below 0.5 and 1.0 at.-%, respectively, for representative samples. All films are polycrystalline as deposited, and possess a thin interfacial SiO2 layer. The capacitance-voltage (C-V) and Current density-voltage (I-V) behavior is reported and discussed for capacitor structures containing films from this study.
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| 6. |
- Duenas, S., et al.
(författare)
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Electrical properties of atomic-layer-deposited thin gadolinium oxide high-k gate dielectrics
- 2007
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 154:10, s. G207-G214
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Tidskriftsartikel (refereegranskat)abstract
- Amorphous or cubic Gd2O3 thin films were grown from tris ( 2,3-dimethyl-2-butoxy)gadolinium( III) , Gd [OC(CH3)(2)CH(CH3)(2))(3)], and H2O precursors at 350 degrees C. As-deposited Gd2O3 films grown on etched (H-terminated) Si(100) exhibited better leakage current-voltage characteristics as well as lower flatband voltage shift than films grown on SiO2/ Si substrates. Interface trap densities were lower in Al/Gd2O3/ hydrofluoric acid (HF)-etched Si samples annealed at rather high temperatures.
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| 7. |
- Duenas, S., et al.
(författare)
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Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films
- 2008
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Ingår i: Journal of Non-Crystalline Solids. - : Elsevier BV. - 0022-3093 .- 1873-4812. ; 354:2-9, s. 404-408
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Tidskriftsartikel (refereegranskat)abstract
- Routes to atomic layer-deposited TiO2 films With decreased leakage have been studied by using electrical characterization techniques. The combination of post-deposition annealing parameters, time and temperature, which provides measurable aluminum-titanium oxide-silicon structures - i.e., having capacitance-voltage curves which show accumulation behavior - are 625 degrees C, 10 min for p-type substrates, and 550 degrees C, 10 min for n-type substrates. The best annealing conditions for p-type substrates are 625 degrees C with the length extended to 30 min, which produces an interfacial state density of about 5-6 x 10(11) cm(-2) eV(-1), and disordered-induced gap state density below our experimental limits. We have also proved that a post-deposition annealing must be applied to TiO2/HfO2 and HfO2/TiO2/HfO2 stacked structures to obtain adequate measurability conditions.
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| 8. |
- Gao, Bin, et al.
(författare)
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An efficient first-principle approach for electronic structures calculations of nanomaterials
- 2008
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Ingår i: Journal of Computational Chemistry. - : Wiley. - 0192-8651 .- 1096-987X. ; 29:3, s. 434-444
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Tidskriftsartikel (refereegranskat)abstract
- An efficient parallel implementation has been realized for a recently proposed central insertion scheme (Jiang, Liu, Lu, Luo. J Chem Phys 2006,124,214711; J Chem Phys 2006,125, 149902) that allows to calculate electronic structures of nanomaterials at various density functional theory levels. It has adopted the sparse-matrix format for Fock/Kohn-Sham and overlap matrices, as well as a combination of implicitly restarted Arnoldi methods (IRAM) and spectral transformation for computing selected eigenvalues/eigenvectors. A systematic error analysis and control for the proposed method has been provided based on a strict mathematical basis. The efficiency and applicability of the new implementation have been demonstrated by calculations of electronic structures of two different nanomaterials consisting of one hundred thousand electrons.
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| 9. |
- Gao, Jingfang, 1966-, et al.
(författare)
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Association of NFKBIA polymorphism with colorectal cancer risk and prognosis in Swedish and Chinese populations
- 2007
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Ingår i: Scandinavian Journal of Gastroenterology. - : Informa UK Limited. - 0036-5521 .- 1502-7708. ; 42:3, s. 345-350
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Tidskriftsartikel (refereegranskat)abstract
- Objective. The inhibitory proteins, IκBs, regulate the activity of nuclear factor kappa-beta (NF-κB), which is implicated in tumorigenesis by regulating expression of a variety of genes involved in cellular transformation, proliferation, invasion, angiogenesis and metastasis. Variants in the genes encoding IκBs may be involved in cancer development through the activation of NF-κB. The objective of this study was to investigate the susceptibility of an A to G variation (rs696) in the 3′ UTR of NFKBIA (encoding IκBα) to colorectal cancer (CRC) and the association of this polymorphism with clinicopathologic variables in CRC patients. Material and methods. A case-control study was carried out on a Swedish (155 CRCs, 438 controls) and a Chinese population (199 CRCs, 577 controls). The genotype of NFKBIA was determined by PCR-restriction fragment length polymorphism. Results. The frequency of the AG genotype was increased in the Chinese patients ≥50 years of age compared with the Chinese controls (odds ratio (OR) = 3.06, 95% confidence interval (CI) = 1.55-6.02, p=0.001), even when adjusted for age (OR = 3.20, 95% CI = 1.61-6.38, p=0.001). The GG genotype of NFKBIA was related to a poorer survival rate in the Swedish patients, independent of gender, age, tumour location, Dukes' stage and differentiation (hazard ratio = 3.10, 95% Cl = 1.28-7.60, p=0.01). Conclusions. Chinese individuals ≥50 years of age carrying the AG genotype of NFKBIA may be at an increased risk of developing CRC, and the GG genotype of NFKBIA may be considered as a prognostic factor for Swedish CRC patients. © 2007 Taylor & Francis.
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| 10. |
- Ghandi, Reza, et al.
(författare)
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High boron incorporation in selective epitaxial growth of SiGe layers
- 2007
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Ingår i: Journal of materials science. Materials in electronics. - : Springer Science and Business Media LLC. - 0957-4522 .- 1573-482X. ; 18:7, s. 747-751
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Tidskriftsartikel (refereegranskat)abstract
- Incorporation of high amount of boron in the range of 1 x 10(20)-1 x 10(21) cm(-3) in selective epitaxial growth (SEG) of Si1-xGex (x = 0.15-0.315) layers for recessed or elevated source/drain junctions in CMOS has been studied. The effect of high boron doping on growth rate, Ge content and appearance of defect in the epi-layers was investigated. In this study, integration issues were oriented towards having high layer quality whereas still high amount of boron is implemented and the selectivity of the epitaxy is preserved.
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