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Träfflista för sökning "WFRF:(Lundgren A. P.) srt2:(2000-2004)"

Sökning: WFRF:(Lundgren A. P.) > (2000-2004)

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  • Jacob, A P, et al. (författare)
  • Cryogenic performance of ultrathin oxide MOS capacitors with in situ doped p(+) poly-Si1-xGex and poly-Si gate materials
  • 2002
  • Ingår i: Semiconductor Science and Technology. - : Iop Publishing Ltd. - 0268-1242 .- 1361-6641. ; 17:9, s. 942-946
  • Tidskriftsartikel (refereegranskat)abstract
    • A low-temperature electrical characterization of ultrathin oxide MOS capacitors with p(+) poly-Si1-xGex and poly-Si gate is performed. The investigated structures are suitable for future nano-scaled high speed MOSFETs. The aim of this study is to compare the low-temperature performance of poly-Si1-xGex and poly-Si gate MOS structures in the nanoscale channel length regime. Apart from the significant change in the flat band voltage, the result shows that all the poly-Si and poly-Si1-xGex gated MOS structures exhibit two centres of polarity change (zero-temperature coefficients) in capacitance. The second polarity change leads to an exclusive phenomenon in these structures. The low-temperature capacitance is found to be less than high-temperature capacitance at strong accumulation and this is in contrast to what has been observed so far in metal-gated capacitors. It is also observed that the temperature dependence of the tunnelling current is only on the oxide thickness and not on the gate material used.
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  • Johansson, M, et al. (författare)
  • HfO2 gate dielectrics on strained-Si and strained-SiGe layers
  • 2003
  • Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 18:9, s. 820-826
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on materials and device characterization of polycrystalline HfO2 gate dielectrics grown by atomic layer deposition (ALD) at 600 degreesC on strained-Si and strained-SiGe layers. No change in the diffusion profile of Hf into the Si substrate was observed for temperatures in the range 900-1100 degreesC for 20 min. The strain status in the Si layer remained unaltered after HfO2 deposition and an interface state density of similar to1 x 10(11) cm(-2) eV(-1) was obtained for the thicker HfO2 films. The breakdown fields were in the range 2-5 MV cm(-1), which is high compared to HfO2 films grown at higher temperatures. The leakage current was reduced by more than five orders of magnitude for the thin HFO2 with an EOT of 1.25 nm and ultra-thin cap (2.5-3 nm) layers on Si0.77Ge0.23/Si, though high interface state densities (similar to1 x 10(12) cm(-2) eV(-1)) were observed. The carrier transport through these HfO2 films was found to follow Frenkel-Poole emission over a wide range of applied gate voltages.
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