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- Lewis, Cathryn M, et al.
(författare)
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Genome scan meta-analysis of schizophrenia and bipolar disorder, part II : Schizophrenia
- 2003
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Ingår i: American Journal of Human Genetics. - 0002-9297 .- 1537-6605. ; 73:1, s. 34-48
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Tidskriftsartikel (refereegranskat)abstract
- Schizophrenia is a common disorder with high heritability and a 10-fold increase in risk to siblings of probands. Replication has been inconsistent for reports of significant genetic linkage. To assess evidence for linkage across studies, rank-based genome scan meta-analysis (GSMA) was applied to data from 20 schizophrenia genome scans. Each marker for each scan was assigned to 1 of 120 30-cM bins, with the bins ranked by linkage scores (1 = most significant) and the ranks averaged across studies (R(avg)) and then weighted for sample size (N(sqrt)[affected casess]). A permutation test was used to compute the probability of observing, by chance, each bin's average rank (P(AvgRnk)) or of observing it for a bin with the same place (first, second, etc.) in the order of average ranks in each permutation (P(ord)). The GSMA produced significant genomewide evidence for linkage on chromosome 2q (PAvgRnk<.000417). Two aggregate criteria for linkage were also met (clusters of nominally significant P values that did not occur in 1,000 replicates of the entire data set with no linkage present): 12 consecutive bins with both P(AvgRnk) and P(ord)<.05, including regions of chromosomes 5q, 3p, 11q, 6p, 1q, 22q, 8p, 20q, and 14p, and 19 consecutive bins with P(ord)<.05, additionally including regions of chromosomes 16q, 18q, 10p, 15q, 6q, and 17q. There is greater consistency of linkage results across studies than has been previously recognized. The results suggest that some or all of these regions contain loci that increase susceptibility to schizophrenia in diverse populations.
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| 3. |
- Laube, M., et al.
(författare)
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Electrical activation of high concentrations of N+ and P+ ions implanted into 4H-SiC
- 2002
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:1, s. 549-554
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Tidskriftsartikel (refereegranskat)abstract
- Comparative Hall effect investigations are conducted on N- and P-implanted as well as on (N+P)-coimplanted 4H-SiC epilayers. Box profiles with three different mean concentrations ranging from 2.5x10(18) to 3x10(20) cm(-3) to a depth of 0.8 mum are implanted at 500 degreesC into the (0001)-face of the initially p-type (Al-doped) epilayers. Postimplantation anneals at 1700 degreesC for 30 min are conducted to electrically activate the implanted N+ and P+ ions. Our systematic Hall effect investigations demonstrate that there is a critical donor concentration of (2-5)x10(19) cm(-3). Below this value, N- and P-donors result in comparable sheet resistances. The critical concentration represents an upper limit for electrically active N donors, while P donors can be activated at concentrations above 10(20) cm(-3). This high concentration of electrically active P donors is responsible for the observed low sheet resistance of 35 Omega/square, which is about one order of magnitude lower than the minimum sheet resistance achieved by N implantation.
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| 6. |
- Bartenstein, M, et al.
(författare)
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Atoms and wires: Toward atom chips
- 2000
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Ingår i: IEEE JOURNAL OF QUANTUM ELECTRONICS. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0018-9197. ; 36:12, s. 1364-1377
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Tidskriftsartikel (refereegranskat)abstract
- Atoms can be trapped and guided using nanofabricated wires on surfaces, achieving the scales required by quantum information proposals. These atom chips form the basis for robust and widespread application of cold atoms ranging from atom optics to fundame
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