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- Tien Son, Nguyen, et al.
(författare)
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Negative-U System of Carbon Vacancy in 4H-SiC
- 2012
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Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 109:18, s. 187603-
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Tidskriftsartikel (refereegranskat)abstract
- Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V-C) in 4H-SiC and its negative-U properties have been determined. Combining EPR and deep-level transient spectroscopy we show that the two most common defects in as-grown 4H-SiC-the Z(1/2) lifetime-limiting defect and the EH7 deep defect-are related to the double acceptor (2 - vertical bar 0) and single donor (0 vertical bar +) levels of V-C, respectively.
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