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- Grahn, J. V., et al.
(författare)
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A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
- 2000
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Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 44:3, s. 549-554
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Tidskriftsartikel (refereegranskat)abstract
- A low-complexity SiGe heterojunction bipolar transistor process based on differential epitaxy and in situ phosphorus doped polysilicon emitter technology is described. Silane-based chemical vapor deposition at reduced pressure was used for low-temperature SiGe epitaxy. Following SiGe epitaxy, the process temperature budget was kept very low with 900 degrees C for 10 s as the highest temperature step. A very high current gain of almost 2000 and cut off frequency of 62 GHz were achieved for a uniform 12% Ge profile. The breakdown voltage BVCEO and forward Early voltage were equal to 2.9 and 6.5 V, respectively.
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- Calafat, J, et al.
(författare)
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The bactericidal/permeability-increasing protein (BPI) is membrane-associated in azurophil granules of human neutrophils, and relocation occurs upon cellular activation
- 2000
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Ingår i: APMIS : acta pathologica, microbiologica, et immunologica Scandinavica. - 1600-0463. ; 108:3, s. 201-208
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Tidskriftsartikel (refereegranskat)abstract
- Neutrophilic granulocytes contain the 55 kDa bactericidal/permeability-increasing protein (BPI). BPI binds to lipopolysaccharides (LPS), and exerts bacteriostatic and bactericidal effects against a wide variety of Gram-negative bacterial species. We have investigated the subcellular location of BPI in immature and mature neutrophils using cryotechnique for immunoelectron microscopy. BPI was found to colocate with myeloperoxidase (MPO), a marker for azurophil granules, and it also showed the same pattern of distribution as CD63, a transmembrane-anchored protein. This suggests that BPI is membrane-associated in the azurophil granules in neutrophils. Its presence in azurophil granules was further confirmed by the finding of BPI in the azurophil granules of neutrophil promyelocytes of the bone marrow. Induction of selective release of azurophilic granules by the Na-ionophore monensin resulted in fusion of endosomes with azurophil granules, leading to the formation of large vacuoles containing MPO, CD63, and BPI. After phagocytosis of serum-treated zymosan (STZ), BPI was detected in phagosomes, both in association with membranes as well as in the lumen, suggesting the release of BPI into activated compartments. The results show that BPI is present in azurophil granules, is probably primarily membrane-associated, and is relocated after activation, following the same route as MPO and CD63.
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- Erdal, Suvar, et al.
(författare)
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High frequency performance of SiGeCHBTs with selectively & non-selectively grown collector
- 2004
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Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T114, s. 138-141
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Tidskriftsartikel (refereegranskat)abstract
- Two high-frequency heterojunction bipolar transistor (HBT) architectures based on SiGeC have been fabricated and characterized. Different collector designs were applied either by using selective epitaxial growth doped with phosphorous or by non-selective epitaxial growth doped with arsenic. Both designs have a non-selectively deposited SiGeC base doped with boron and a poly-crystalline emitter doped with phosphorous. Both HBT designs exhibit similar electrical characteristics with a peak DC current gain of around 1600 and a BVCEO of 1.8V. The cut-off frequency (f(T)) and maximum frequency of oscillation (f(max)) vary from 40-80 GHz and 15-30 GHz, respectively, depending on lateral design relations. Good high frequency performance for a device with a selectively grown collector is demonstrated for the first time.
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| 9. |
- Haralson, Erik, et al.
(författare)
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The effect of C on emitter-base design for a single-polysilicon SiGe : C HBT with an IDP emitter
- 2004
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 224:1-4, s. 330-335
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Tidskriftsartikel (refereegranskat)abstract
- A differential epitaxy SiGe:C heterojunction bipolar junction transistor (HBT) design is reported and used to study the effect of carbon on junction formation as well as the effect of lateral design parameters on ac and dc performance. The device exhibits a high current gain (beta) of 1700 and a BVCEO of 1.8 V. The peak cutoff frequency (f(T)) and maximum oscillation frequency (f(MAX)) are 73 and 17 GHz, respectively. The effect of emitter overlap on f(T) was minimal, but it had a strong impact on dc performance. LOCOS opening size strongly impacted both ac and dc performance. In addition, the effect of carbon, base cap thickness, and rapid thermal anneal (RTA) temperature on the emitter-base (E-B) junction formation was studied.
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