| 1. |
- Vukusic, J., et al.
(författare)
-
MOVPE-grown GaInNAsVCSELs at 1.3 mu m with conventional mirror design approach
- 2003
-
Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 39:8, s. 662-664
-
Tidskriftsartikel (refereegranskat)abstract
- 1.3 mum oxide confined GaInNAs VCSELs designed using the same design philosophy used for standard 850 nm VCSELs is presented. The VCSELs have doped mirrors, with graded and highly doped interfaces, and are fabricated using production-friendly procedures. Multimode VCSELs (I I mum oxide aperture) with an emission wavelength of 1287 nm have a threshold current of 3 mA and produce I mW of output power at 20degreesC. The maximum operating temperature is 95degreesC. Emission at 1303 nm with I mW of output power and a threshold current of 7 mA has been observed from VCSELs with a larger detuning between the gain peak and the cavity resonance.
|
|
| 2. |
- Asplund, Carl, et al.
(författare)
-
1260 nm InGaAs vertical-cavity lasers
- 2002
-
Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 38:13, s. 635-636
-
Tidskriftsartikel (refereegranskat)abstract
- The fabrication and performance of highly strained double-quantum well InGaAs/GaAs vertical-cavity lasers with record-long emission wavelength of 1260 nm at room temperature is reported. Depending on device diameter, the minimum threshold current is in the low mA-regime while the maximum output power exceeds 1 mW. The devices work continuous-wave over a wide temperature range of at least 10-120degrees C.
|
|
| 3. |
- Hammar, M., et al.
(författare)
-
1300-nm GaAs-based vertical-cavity lasers
- 2002
-
Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - Brugge : SPIE. ; , s. 137-149
-
Konferensbidrag (refereegranskat)abstract
- We compare GaInNAs and highly strained InGaAs quantum-wells (QWs) for applications in metal-organic vapor-phase epitaxy (MOVPE)-grown GaAs-based 1300-nm vertical-cavity lasers (VCLs). While the peak wavelength of InGaAs QWs can be extended by a small fraction of N, the luminescence efficiency degrades strongly with wavelength. On the other hand, using highly strained InGaAs QWs in combination with a large VCL detuning it is also possible to push the emission wavelength towards 1.3 ÎŒm. The optimized MOVPE growth conditions for such QW and VCL structures are discussed in some detail. It is noted that GaInNAs and InGaAs QWs preferably are grown at low temperature, but with quite different V/III ratios and growth rates. We also point out the importance of reduced doping concentration and growth temperature of the n-doped bottom distributed Bragg reflector to minimize optical loss and for compatibility with GaInNAs QWs. InGaAs VCLs with emission wavelengths beyond 1260 nm are demonstrated. This includes mW-range output power, mA-range threshold current and 10 Gb/s data transmission.
|
|
| 4. |
- Mogg, S., et al.
(författare)
-
1.3-ÎŒm InGaAs(N)/GaAs vertical-cavity lasers
- 2003
-
Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - San Jose, CA : SPIE. ; , s. 139-151
-
Konferensbidrag (refereegranskat)abstract
- In this work we present performance characteristics of metalorganic vapor-phase epitaxy grown GaInNAs and InGaAs quantum-well (QW) vertical-cavity lasers (VCLs) for 1.3-Όm applications. The InGaAs VCLs emit in a wavelength range from 1200 to somewhat above 1260 nm, while the GaInNAs VCLs operate from 1265 to 1303 nm. The InGaAs VCLs are based on highly strained InGaAs double QWs, with photoluminescence (PL) maximum at around 1190 nm, and extensive negative gain-cavity detuning. As a consequence, these devices are strongly temperature sensitive and the minimum threshold current is found at very high temperature (∌90-100°C). Both kind of VCLs work continuous-wave well above 100°C, and while the InGaAs VCLs reach slightly higher light output power, they show significantly larger threshold currents. In addition, the large device detuning also has profound effects on the high-frequency response. Nevertheless, for a 1260-nm device, 10 Gb/s transmission is demonstrated in a back-to-back configuration. We also show that by further optimization of the InGaAs QWs the PL peak wavelength can be extended to at least 1240 nm. The incorporation of such QWs in the present VCL structure should considerably improve the device performance, resulting in higher light output power, lower threshold current, and reduced temperature sensitivity with a shift of the minimum threshold current towards room temperature, thus approaching standard VCL tuning.
|
|
| 5. |
|
|
| 6. |
- Viklander, Maria, et al.
(författare)
-
Urban drainage and highway runoff in cold climates : conference overview
- 2003
-
Ingår i: Water Science and Technology. - : IWA Publishing. - 0273-1223 .- 1996-9732. ; 48:9, s. 1-10
-
Tidskriftsartikel (refereegranskat)abstract
- This overview of research findings presented at the conference on urban drainage and highway runoff in cold climates starts with generation of urban runoff and snowmelt, followed by snowmelt and winter runoff quality, best management practices for urban snowmelt and winter runoff, and snow management in urban areas. Research on the urban hydrological cycle is lagging behind the needs in this field, particularly in terms of data availability. The current studies of winter urban runoff quality focus on road salts in the urban environment and their environmental effects. The needs for better source controls in salt applications, improved management of chloride-laden runoff, and selective adoption of environmentally safer alternative de-icers were reported. Adaptation of the conventional stormwater best management practices (BMPs) for winter operation remains a challenge. The first step in refining the existing BMPs for winter operation is to advance the understanding of their operation, as reported for some cases at the conference. Finally, snow management in urban areas may require local storage of fresh (unpolluted) snow and disposal of more polluted snow at central snow disposal sites.
|
|
