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- Vomiero, Alberto, et al.
(författare)
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Effects of thermal annealing on the structural properties of sputtered W-Si-N diffusion barriers
- 2004
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 7:4-6 SPEC. ISS., s. 325-330
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Tidskriftsartikel (refereegranskat)abstract
- W-Si-N thin films were deposited via rf-magnetron sputtering from a W 5Si3 target in Ar/N2 reactive gas mixtures over a large range of compositions, obtained by varying the partial flow of nitrogen within the reaction chamber. The samples of each set were then thermally annealed in vacuum at different temperatures up to 980°C. Film composition was determined by Rutherford backscattering spectrometry (RBS), surface film morphology by scanning electron microscopy (SEM), micro-structure by transmission electron microscopy (TEM), vibrational properties by FT-IR absorption and Raman scattering spectroscopy, and electrical resistivity by four-point probe measurements. Independently of the deposition conditions, all the as-deposited films have an amorphous structure, while their composition varies, showing an increase of Si/W ratio from 0.1 up to 0.55 when the nitrogen concentration in the films increases from 0 to 60 at%. Thermal treatments in vacuum induce an important loss of nitrogen in the nitrogen-rich samples, especially at temperatures higher than 600°C. Samples with high nitrogen content preserve their amorphous structure even at the highest annealing temperature, despite the chemical bonding ordering observed by means of FTIR measurements. Raman spectroscopy of as-deposited films rich in nitrogen suggests the presence of an important amorphous silicon nitride component, but fails to detect any structural rearrangement either within the composite matrix of film or within silicon nitride component. Segregation of metallic tungsten was detected by TEM in the annealed sample with lowest nitrogen content (W 58Si21N21). Finally, the resistivity of the films increases with the N content, while the loss of nitrogen accompanies the decrease of resistivity especially of samples with high nitrogen content. © 2004 Elsevier Ltd. All rights reserved.
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| 2. |
- Vomiero, Alberto, et al.
(författare)
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Structural and functional characterization of W-Si-N sputtered thin films for copper metallizations
- 2004
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Ingår i: Materials Research Society Symposium Proceedings. - 0272-9172 .- 1946-4274. ; 812, s. 153-158
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Tidskriftsartikel (refereegranskat)abstract
- Ternary W-Si-N thin films have been reactively sputter-deposited from a W5Si3 target at different nitrogen partial pressures. The composition has been determined by 2.2 MeV 4He+ beam, the structure by x-ray diffraction and transmission electron microscope, the chemical bonds by Fourier transform - infrared spectroscopy and the surface morphology by scanning electron microscopy. Electrical resistivity was measured by four point probe technique on the as grown films. The film as-deposited is amorphous with the Si/W ratio increasing from about 0.1 up to 0.55 with the nitrogen content going from 0 to 60 at%. The heat treatments up to 980°C induce a loss of nitrogen in the nitrogen rich samples. Segregation of metallic tungsten occurs in the sample with low nitrogen content (W58Si 21N21). Samples with high nitrogen content preserve the amorphous structure, despite of the precipitation of a more ordered phase inferred by FT-IR absorbance spectrum of the layer treated at highest temperature. The surface morphology depends upon the nitrogen content; the loss of nitrogen induces the formation of blistering and in the most nitrogen rich sample the formation of holes. Electrical resistivity preliminary results on the as grown layers range between 500 and 4750 μΩcm passing from the lowest to the highest N concentration.
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