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Sökning: WFRF:(Mazzola Federico) > (2013-2014)

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1.
  • Mazzola, Federico, et al. (författare)
  • Disentangling phonon and impurity interactions in delta-doped Si(001)
  • 2014
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 104:17
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a study of the phonon and impurity interactions in a shallow two dimensional electron gas formed in Si(001). A highly conductive ultra-narrow n-type dopant delta-layer, which serves as a platform for quantum computation architecture, is formed and studied by angle resolved photoemission spectroscopy (ARPES) and temperature dependent nanoscale 4-point probe (4PP). The bandstructure of the delta-layer state is both measured and simulated. At 100 K, good agreement is only achieved by including interactions; electron-impurity scattering (W-0 = 56 to 61 meV); and electron-phonon coupling (lambda = 0.14 +/- 0.04). These results are shown to be consistent with temperature dependent 4PP resistance measurements which indicate that at 100 K, approximate to 7/8 of the measured resistance is due to impurity scattering with the remaining 1/8 coming from phonon interactions. In both resistance and bandstructure measurements, the impurity contribution exhibits a variability of approximate to 9% for nominally identical samples. The combination of ARPES and 4PP affords a thorough insight into the relevant contributions to electrical resistance in reduced dimensionality electronic platforms. (C) 2014 AIP Publishing LLC.
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2.
  • Mazzola, Federico, et al. (författare)
  • Kinks in the σ Band of Graphene Induced by Electron-Phonon Coupling
  • 2013
  • Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 111:21, s. 216806-
  • Tidskriftsartikel (refereegranskat)abstract
    • Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the σ band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cutoff in the Fermi-Dirac distribution. They are therefore not expected for the σ band of graphene that has a binding energy of more than ≈3.5  eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cutoff in the density of σ states. The existence of the effect suggests a very weak coupling of holes in the σ band not only to the π electrons of graphene but also to the substrate electronic states. This is confirmed by the presence of such kinks for graphene on several different substrates that all show a strong coupling constant of λ≈1.
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