| 1. |
- Angulo Barrios, C., et al.
(författare)
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GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth
- 2001
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Ingår i: Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on.
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Konferensbidrag (refereegranskat)abstract
- GaAs/AlGaAs buried-heterostructure in-plane lasers and vertical-cavity surface-emitting lasers using GaInP:Fe as the burying layer have been fabricated and investigated. Regrowth of GaInP:Fe around etched laser mesas was achieved by hydride vapor phase epitaxy. The lasers exhibit good performance under CW operation and show promising high-speed characteristics.
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| 2. |
- Barrios, C. A., et al.
(författare)
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Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP : Fe and GaAs : Fe
- 2001
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Ingår i: Journal of Electronic Materials. - 0361-5235 .- 1543-186X. ; 30:8, s. 987-991
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Tidskriftsartikel (refereegranskat)abstract
- Selective regrowth of semi-insulating iron-doped Ga0.51In0.49P (SI-GaInP:Fe) and SI-GaAs:Fe around GaAs/AlGaAs mesas by hydride vapor phase epitaxy (HVPE) has been achieved. A HCl based in-situ cleaning procedure has been used to remove aluminum oxide from the etched walls of the mesas. Regrowth conducted without proper cleaning results in an irregular interface with voids. Regrowth morphology aspects are also presented. Our cleaning and regrowth methods have been used for fabricating GaAs/AlGaAs buried heterostructure in-plane lasers and vertical-cavity surface-emitting lasers.
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| 3. |
- Barrios, C. A., et al.
(författare)
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GaAs/AlGaAs buried heterostructure laser by wet etching and semi-insulating GaInP : Fe regrowth
- 2000
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Ingår i: Electrochemical and solid-state letters. - 1099-0062 .- 1944-8775. ; 3:9, s. 439-441
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Tidskriftsartikel (refereegranskat)abstract
- Selective regrowth of semi-insulating Ga0.51In0.49P:Fe (SI-GaInP:Fe) by hydride vapor-phase epitaxy around Al-containing wet etched laser mesas is used for the first time to fabricate a GaAs/AlGaAs buried heterostructure laser emitting at 808 nm. The reverse and forward current-voltage characteristics measured at different temperatures up to 80 degrees C indicate no serious leakage current problems. The performance of the laser shows that the SI-GaInP: Fe burying layer fulfills its function as a current and optical confinement layer. The fabrication procedure and the laser characteristics are presented.
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| 4. |
- Barrios, C. A., et al.
(författare)
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GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser with semi-insulating GalnP : Fe regrowth
- 2000
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Ingår i: Electronics Letters. - 0013-5194 .- 1350-911X. ; 36:18, s. 1542-1544
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Tidskriftsartikel (refereegranskat)abstract
- The authors report the first results of a GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser (VCSEL) with semi-insulating Ga0.51In0.49P:Fe (SI-GaInP:Fe) as the burying layer. Regrowth of SI-GaInP:Fe around 15 mu m diameter and 8 mu m tall VCSEL mesas was carried out by hydride vapour phase epitaxy (HVPE). Under room temperature continuous wave (CW) operation. the device exhibited a threshold current of 3.5mA, a differential quantum efficency of 33% and a light output power of 4.2mW. CW operation at temperatures up to 97 degrees C is also demonstrated.
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| 5. |
- Carlsson, C., et al.
(författare)
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Performance characteristics of buried heterostructure VCSELs using semi-insulating GaInP : Fe regrowth
- 2001
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Ingår i: IEEE Journal of Quantum Electronics. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9197 .- 1558-1713. ; 37:7, s. 945-950
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Tidskriftsartikel (refereegranskat)abstract
- We have fabricated GaAs-AlGaAs buried heterostructure vertical cavity surface emitting lasers, emitting at 850 nm, using semi-insulating GaInP:Fe regrowth and investigated their static properties. Lasers of different size (10-21 mum) have threshold currents in the range 2.8-7.0 mA, and produce a maximum output power of 1.7-6.0 mW at room temperature. The variation of threshold current with device size shows that the leakage current at the regrowth interface accounts for a significant part of the injection current. In spite of this, a differential quantum efficiency in the range 20%-30% is obtained which indicates that the regrowth interface is smooth and does not introduce any significant scattering loss. Studies of the transverse mode properties suggest that the GaInP provides weak guiding, resulting in single mode operation up to an output power of 0.7 mW and a beam divergence of only 6 degrees for lasers as large as 10 mum.
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