| 1. |
- Gomeniuk, Y. Y., et al.
(författare)
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Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs
- 2011
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Ingår i: 6th International Workshop on Semiconductor-on-Insulator Materials and Devices. - 9783037851784 ; , s. 87-93
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Konferensbidrag (refereegranskat)abstract
- The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-? LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO 3/Si interface is presented and typical maxima of 1.2×10 11 eV-1cm-2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 μm and 50 μm, respectively) are presented. The front channel mobility appeared to be 126 cm2V -1s-1 and 70 cm2V-1s-1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.
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| 2. |
- Engström, Olof, 1943, et al.
(författare)
-
Gate stacks
- 2013
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Ingår i: Nanoscale CMOS: Innovative Materials, Modeling and Characterization. - : Wiley. ; , s. 23 - 67
-
Bokkapitel (övrigt vetenskapligt/konstnärligt)
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| 3. |
- Gomeniuk, Y. Y, et al.
(författare)
-
Electrical properties of LaLuO3/Si(100) structures prepared by molecular beam deposition
- 2010
-
Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. - 9781566778220 ; 33:3, s. 221-227
-
Konferensbidrag (refereegranskat)abstract
- The paper presents the results of electrical characterization in the wide temperature range (120-320 K) of the interface and bulk properties of high-k LaLuO3 dielectric deposited by molecular beam deposition (MBD) on silicon substrate. The energy distribution of interface state density is presented and typical maxima of 1.2×1011 and 2.5×10 11 eV-1 cm-2 were found at about 0.25-0.3 eV from the silicon valence band. The charge carrier transport through the dielectric at the forward bias was found to occur via Poole-Frenkel mechanism, while variable range hopping conduction (Mott's law) controls the current at the reverse bias.
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