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Träfflista för sökning "WFRF:(Moon C. S.) srt2:(2002-2004)"

Sökning: WFRF:(Moon C. S.) > (2002-2004)

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1.
  • Thinh, N. Q., et al. (författare)
  • Identification of Ga-interstitial defects in GaNyP1−y and AlxGa1−xNyP1−y
  • 2004
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : APS. - 1098-0121 .- 1550-235X. ; 70:12, s. 121201-
  • Tidskriftsartikel (refereegranskat)abstract
    • Two Ga -interstitial (Gai) defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaNyP1−y and AlxGa1−xNyP1−y. Characteristic hyperfine structure arising from spin interaction between an unpaired electron and a Ga nucleus is clearly resolved. The observed strong and nearly isotropic hyperfine interaction reveals an electron wave function of A1 symmetry that is highly localized at the Gai and thus a deep-level defect. Our analysis based on first-principles calculations suggests that these defects are complexes containing one Gai2+ .
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2.
  • Cho, C. R., et al. (författare)
  • Na0.5K0.5NbO3 thin films for MFIS_FET type non-volatile memory applications
  • 2002
  • Ingår i: Integrated Ferroelectrics. - 1058-4587 .- 1607-8489. ; 49, s. 21-30
  • Tidskriftsartikel (refereegranskat)abstract
    • Na0.5K0.5NbO3(NKN) thin films have been prepared on Pt80Ir20, SiO2/Si, and Ta2O5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt80Ir20 vertical capacitor yielded remnant polarization of 12 muC/cm(2) and coercive field similar to20 kV/cm. Significant flat-band voltage V-FB shifts with buffer layer thickness in Au/NKN/SiO2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO2 layer. On the other hand, Au/NKN/Ta2O5/Si structure exhibited wide memory window without significant V-FB deviations, low leakage currents, and rather long retention time at zero bias.
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  • Resultat 1-4 av 4

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