| 1. |
- Benisty, H., et al.
(författare)
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Low-loss photonic-crystal and monolithic InP integration : Bands, bends, lasers, filters
- 2004
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Ingår i: Photonic Crystal Materials and Devices II. - : SPIE - International Society for Optical Engineering. - 0819452688 ; , s. 119-128
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Konferensbidrag (refereegranskat)abstract
- Practical realizations of 2D (planar) photonics crystal (PhC) are either on a membrane or etched through a conventional heterostructure. While fascinating objects can emerge from the first approach, only the latter approach lends itself to a progressive integration of more compact PhC's towards monolithic PICs based on InP. We describe in this talk the various aspects from technology to functions and devices, as emerged from the European collaboration "PCIC". The main technology tour de force is deep-etching with aspect ratio of about 10 and vertical sidewall, achieved by three techniques (CAIBE, ICP-RIE, ECR-RIE). The basic functions explored are bends, splitters/combiners, mirrors, tapers, and the devices are filters and lasers. At the end of the talk, I will emphasize some positive aspects of "broad" multimode PhC waveguides, in view of compact add-drop filtering action, notably.
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| 2. |
- Mogg, S., et al.
(författare)
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High-performance 1.2-ÎŒm Highly strained InGaAs/GaAs quantum well lasers
- 2002
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Stockholm. ; , s. 107-110
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Konferensbidrag (refereegranskat)abstract
- The growth and characterisation of high-performance 1.2-Όm highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145°C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli.
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| 3. |
- Mogg, Sebastian, et al.
(författare)
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High-performance 1.2- mu;m highly strained InGaAs/GaAs quantum well lasers
- 2002
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Ingår i: Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. ; , s. 107-110
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Konferensbidrag (refereegranskat)abstract
- The growth and characterisation of high-performance 1.2- mu;m highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145 deg;C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli (1975).
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| 4. |
- Mulot, M., et al.
(författare)
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Dry etching of photonic crystals in InP based materials
- 2002
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Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T101, s. 106-109
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Tidskriftsartikel (refereegranskat)abstract
- Photonic crystal (PC) etching in InP/GaInAsP using two different processes, namely Ar/CH4/H-2 based Reactive Ion Etching (RIE) and Ar/Cl-2 based Chemically Assisted Ion Beam Etching (CAIBE), is investigated in detail and the results are compared. Our goal was to identify the limits of the processes and to optimize process parameters for PC etching. With Ar/CH4/H-2 RIE, we obtained PC holes with smooth profiles. However, the etch depth depends strongly on the hole diameter; the smaller the hole diameter, the smaller is the obtained hole depth. This together with the obtained hole profiles indicates the presence of an etch-limiting mechanism and is attributed to inefficient removal of etch-products. In the case of Ar/Cl-2 CAME, we find that both shape and depth of the holes, depend on sample temperature, Cl-2 flow and etching duration. By optimizing the process parameters, we show that it is possible to balance the physical and chemical components in the etch process. We demonstrate that Ar/Cl-2 CAME is a promising process for PC etching in InP. With this process, we can obtain sufficiently deep holes (2.3-2.5 mum) even for hole diameters as small as 220nm.
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| 5. |
- Talneau, A., et al.
(författare)
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High-bandwidth transmission of an efficient photonic-crystal mode converter
- 2004
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Ingår i: Optics Letters. - 0146-9592 .- 1539-4794. ; 29:15, s. 1745-1747
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Tidskriftsartikel (refereegranskat)abstract
- We have investigated both theoretically and experimentally the spectral behavior and the transmission and reflection performance of a photonic-crystal (PhC) mode converter upon an InP substrate. This taper exhibits 70% transmission efficiency on an 80-nm bandwidth when it couples a ridge access guide to a strongly confined single-missing-row PhC guide. Such a taper design included in a PhC bend contributes a large benefit to the overall transmission budget of the PhC-based link.
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| 6. |
- Talneau, A., et al.
(författare)
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Modal behavior of single-line photonic crystal guiding structures on InP substrate
- 2004
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Ingår i: Photonics and Nanostructures - Fundamentals and Applications. - : Elsevier BV. - 1569-4410 .- 1569-4429. ; 2:1, s. 1-10
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Tidskriftsartikel (refereegranskat)abstract
- We have experimentally investigated the modal behaviour and the polarization dependence of the transmission through single-missing-row photonic crystal (PC) straight guides, bends and combiners, fabricated on InP substrate. A photonic crystal-based taper has been included to funnel light in these strongly confined structures. Two-dimensional finite-difference time-domain simulations have been performed and favorably compared with the measurements. It is found that the scattering process occurring at a bend/combiner transition plays a key role on the overall transmission.
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| 7. |
- Wild, B., et al.
(författare)
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Temperature tuning of the optical properties of planar photonic crystal microcavities
- 2004
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Ingår i: Proc SPIE Int Soc Opt Eng. - : SPIE. ; , s. 311-317
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Konferensbidrag (refereegranskat)abstract
- We report on the temperature tuning of the optical properties of planar Photonic Crystal (PhC) microcavities. Studies were made on one and two dimensional PhCs that were etched in InP and GaAs vertical waveguides. Two dimensional (hexagonal) and one-dimensional (Fabry-Pérot) cavities were optically investigated by an internal light source technique. The samples were mounted on a Peltier-stage which allowed temperature variation from T = 20 °C up to T = 76 °C. A linear dependence of the resonance wavelengths with respect to temperature is observed. A gradient of dλ/dT = 0.09 nm/°C and 0.1 nm/°C for the GaAs and InP based cavities was observed, respectively. These results are in agreement with the theoretical calculations based on the thermal dependence of the refractive index of the PhC semiconductor component.
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| 8. |
- Wild, B., et al.
(författare)
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Temperature tuning of the optical properties of planar photonic crystal microcavities
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 84:6, s. 846-848
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Tidskriftsartikel (refereegranskat)abstract
- We report on the temperature tuning of the optical properties of photonic crystal (PhC) microcavities. Planar and one-dimensional cavities were made from two-dimensional PhCs etched in GaAs and InP based vertical waveguides. These systems were optically characterized by an internal light source technique. The samples were mounted on a Peltier stage in order to vary the temperature from 20 to 76degreesC. Linear dependence of the resonance wavelengths with respect to the temperature is observed with gradients dlambda/dT=0.09 and 0.1 nm/degreesC for GaAs and InP based cavities, respectively. These results are in agreement with theoretical calculations based on the thermal dependence of the refractive index of the PhC semiconductor component.
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