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Träfflista för sökning "WFRF:(Nielsen R) srt2:(1995-1999)"

Sökning: WFRF:(Nielsen R) > (1995-1999)

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  • Budde, M., et al. (författare)
  • Identification of the hydrogen-saturated self-interstitials in silicon and germanium
  • 1998
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 57:18, s. 4397-4412
  • Tidskriftsartikel (refereegranskat)abstract
    • Silicon and germanium single crystals are implanted with protons. The infrared-absorption spectra of the samples contain sharp absorption lines due to the excitation of hydrogen-related local vibrational modes. The lines at 743.1, 748.0, 1986.5, and 1989.4 cm-1 in silicon and at 700.3, 705.5, 1881.8, and 1883.5 cm-1 in germanium originate from the same defect in the two materials. Measurements on samples coimplanted with protons and deuterons show that the defect contains two equivalent hydrogen atoms. Uniaxial stress measurements are carried out and a detailed analysis of the results is presented. It is shown that the defect has monoclinic-II symmetry, and the orientations of the Si-H and Ge-H bonds of the defect are determined. Ab initio local-density-functional theory is used to calculate the structure and local vibrational modes of the self-interstitial binding one and two hydrogen atoms in silicon and germanium together with the structure of the self-interstitial itself. The observed properties of the defect are in excellent agreement with those calculated for the self-interstitial binding two hydrogen atoms.
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9.
  • Budde, M., et al. (författare)
  • The hydrogen-saturated self-interstitial in silicon and germanium
  • 1997
  • Ingår i: Defects in semiconductors. - : Trans Tech Publications Inc.. ; , s. 35-40
  • Konferensbidrag (refereegranskat)abstract
    • Infrared absorption spectroscopy is used to study H-related point defects in H+-implanted Si (Si:H) and Ge (Ge:H). The absorption lines at 743.1, 748.0, 1986.5 and 1989.4 cm-1 in Si:H and at 700.3, 705.5, 1881.8 and 1883.5 cm-1 in Ge:H are shown to originate from the same defect containing two equivalent H atoms. Uniaxial stress experiments show that the defects have monoclinic-II symmetry, and the orientations of the two Si-H or Ge-H bonds are determined. The structure and the local vibrational modes of the self-interstitial binding two H atoms (IH2) are calculated with LDF cluster theory. The symmetry, bond-orientations and isotopic frequency-shifts calculated for IH2 are in excellent agreement with those observed for the 743.1-, 748.0-, 1986.5- and 1989.4-cm-1 modes in Si:H and for the 700.3-, 705.5-, 1881.8- and 1883.5-cm-1 modes in Ge:H.
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10.
  • Coomer, B.J., et al. (författare)
  • Vacancy-hydrogen complexes in germanium
  • 1998
  • Ingår i: E-MRS Meeting. - : European Materials Research Society.
  • Konferensbidrag (refereegranskat)abstract
    • Local-density-functional pseudopotential theory is used to investigate the structural, electronic and vibrational properties of vacancy-hydrogen complexes in germanium. The results are compared with recent infrared absorption data from proton and deuteron implanted Ge. The acceptor and donor levels of the VH defects are derived semi-empirically from the relaxed structures
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