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Träfflista för sökning "WFRF:(Nordell N) srt2:(1995-1999)"

Sökning: WFRF:(Nordell N) > (1995-1999)

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1.
  • Doyle, J. P., et al. (författare)
  • Electrically active point defects in n-type 4H–SiC
  • 1998
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 84:3, s. 61-68
  • Tidskriftsartikel (refereegranskat)abstract
    • An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers of 4H–SiC grown by vapor phase epitaxy with a concentration of approximately 1×1013 cm−3. Secondary ion mass spectrometry revealed no evidence of the transition metals Ti, V, and Cr. Furthermore, after electron irradiation with 2 MeV electrons, the 0.70 eV level is not observed to increase in concentration although three new levels are observed at approximately 0.32, 0.62, and 0.68 eV below Ec with extrapolated capture cross sections of 4×10−14, 4×10−14, and 5×10−15 cm2, respectively. However, the defects causing these levels are unstable and decay after a period of time at room temperature, resulting in the formation of the 0.70 eV level. Our results suggest strongly that the 0.70 eV level originates from a defect of intrinsic nature. The unstable behavior of the electron irradiation-induced defects at room temperature has not been observed in the 6H–SiC polytype.
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  • Doyle, J P, et al. (författare)
  • Observation of near-surface electrically active defects in n-type 6H-SiC
  • 1998
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 83, s. 3649-3651
  • Tidskriftsartikel (refereegranskat)abstract
    • In n-type 6H-SiC epitaxial layers grown by vapor phase epitaxy, we find that in contrast to the majority of the epitaxial layer, where electrically active defects are observed with a concentration less than 1 X 10(-13) cm(-3), a region near the front surface contains defects with concentrations approaching 10(14) cm(-3). A relationship between the near-surface defects and metallic impurities is suggested by a Ti concentration of 1 X 10(16) cm(-3) in this region. The high concentration of near surface defects is found to significantly reduce the carrier lifetime. (C) 1998 American Institute of Physics. [S0021-8979(98)03007-2].
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