| 1. |
- Butterfield, B. J., et al.
(författare)
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Alpine cushion plants inhibit the loss of phylogenetic diversity in severe environments
- 2013
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Ingår i: Ecology Letters. - : Wiley. - 1461-0248 .- 1461-023X. ; 16:4, s. 478-486
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Tidskriftsartikel (refereegranskat)abstract
- Biotic interactions can shape phylogenetic community structure (PCS). However, we do not know how the asymmetric effects of foundation species on communities extend to effects on PCS. We assessed PCS of alpine plant communities around the world, both within cushion plant foundation species and adjacent open ground, and compared the effects of foundation species and climate on alpha (within-microsite), beta (between open and cushion) and gamma (open and cushion combined) PCS. In the open, alpha PCS shifted from highly related to distantly related with increasing potential productivity. However, we found no relationship between gamma PCS and climate, due to divergence in phylogenetic composition between cushion and open sub-communities in severe environments, as demonstrated by increasing phylo-beta diversity. Thus, foundation species functioned as micro-refugia by facilitating less stress-tolerant lineages in severe environments, erasing a global productivity – phylogenetic diversity relationship that would go undetected without accounting for this important biotic interaction.
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| 2. |
- Jamshidi, Asghar, et al.
(författare)
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Growth of GeSnSiC layers for photonic applications
- 2013
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Ingår i: Surface & Coatings Technology. - : Elsevier. - 0257-8972 .- 1879-3347. ; 230, s. 106-110
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Tidskriftsartikel (refereegranskat)abstract
- This work presents epitaxial growth of intrinsic and doped GeSnSiC layers using Ge2H6, SnCl4, CH3SiH3, B2H6, PH3 and Si2H6 deposited at 290-380 degrees C on strain relaxed Ge buffer layer or Si substrate by using reduced pressure chemical vapor deposition (RPCVD) technique. The GeSnSi layers were compressively strained on Ge buffer layer and strain relaxed on Si substrate. It was demonstrated that the quality of epitaxial layers is dependent on the growth parameters and that the Sn content in epi-layers could be tailored by growth temperature. The Sn segregation caused surface roughness which was decreased by introducing Si and Si-C into Ge layer. less thanbrgreater than less thanbrgreater thanThe Sn content in GeSn was carefully determined from the mismatch, both parallel and perpendicular, to the growth direction when the Poisson ratio was calculated for a certain Ge-Sn composition. The X-ray results were excellently consistent with Rutherford Backscattered Spectroscopy (RBS). Strain relaxed GeSn layers were also used as virtual substrate to grow tensile-strained Ge layers. The Ge cap layer had low defect density and smooth surface which makes it a viable candidate material for future photonic applications.
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