| 1. |
- Nyholm, R., et al.
(författare)
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ADSORPTION-SITE DETERMINATION OF ORDERED YB ON SI(111) SURFACES
- 1993
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 47:15, s. 9663-9668
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Tidskriftsartikel (refereegranskat)abstract
- Low-energy-electron-diffraction (LEED), scanning-tunneling-microscopy (STM), and photoelectron-spectroscopy measurements have been performed on the ordered submonolayer surface reconstructions of Yb on Si(111). Two of these reconstructions, namely, 3 X 1 and 2 X 1, have been studied in detail. STM and LEED revealed that what was considered to be the 3 X 1 reconstruction is actually a 3 X 2 reconstruction. By combining STM and photoelectron-spectroscopy results from the 3 X 2 and 2 X 1 reconstructions, we conclude that the Yb atoms are adsorbed in bridge sites.
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| 2. |
- Nyholm, R., et al.
(författare)
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ELECTRONIC AND STRUCTURAL-PROPERTIES OF THE CU-BI2CASR2CU2O8 INTERFACE
- 1991
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Ingår i: Physica. C, Superconductivity. - 0921-4534 .- 1873-2143. ; 180:1-4, s. 120-123
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Tidskriftsartikel (refereegranskat)abstract
- The formation of the Cu-Bi2CaSr2Cu2O8 interface has been studied by photoelectron spectroscopy using synchrotron radiation. Photon energies in the range 20-1000 eV were utilized in order to probe both the valence band and to monitor chemical changes upon Cu deposition, as revealed by the core-level shifts. A strong chemical reaction between Bi2CaSr2CuO8 and Cu is manifested by the formation of metallic Bi. From the intensity variations as a function of electron emission angle it is shown that the metallic Bi segregates to the top surface layer.
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| 3. |
- Nyholm, R., et al.
(författare)
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EPITAXIAL SILICIDE FORMATION IN THE MG/SI(111) SYSTEM
- 1993
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 289:3, s. 290-296
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Tidskriftsartikel (refereegranskat)abstract
- The silicide formation has been studied in the Mg/Si(111) system by IOW energy electron diffraction (LEED) and photoelectron spectroscopy. It has been found that an epitaxial Mg2Si silicide is responsible for the (2/3 square-root e x 2/3 square-root 3)R30-degrees reconstruction in this system. The thickness of the silicide is limited due to the very low formation temperature for this silicide. The Fermi level is positioned 0.59 +/- 0.06 eV above the valence band maximum in the Si substrate and the valence band maximum in the epitaxial silicide is positioned 0.3 +/- 0.1 eV below the Fermi level.
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| 4. |
- Nyholm, R., et al.
(författare)
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FORMATION OF SM SILICIDES ON SI(111) - COMPOSITION AND EPITAXY
- 1993
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Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 293:3, s. 254-259
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Tidskriftsartikel (refereegranskat)abstract
- The formation of Sm silicides on Si(111) by means of solid phase epitaxy has been studied with low energy electron diffraction, Auger electron spectroscopy and photoelectron spectroscopy of the Sm 4f level and Si 2p level. A limited reaction is found to occur already at room temperature whereas at higher temperatures a strongly intermixed Sm/Si layer showing some long range order is formed. The Sm atoms of this intermixed phase are found to be completely trivalent in accordance with expectations. The intermixed layer consists of two silicides with different compositions, one of them being SmSi2-x, the other being tentatively ascribed to SmSi.
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| 5. |
- Nyholm, R., et al.
(författare)
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PHOTOEMISSION-STUDY OF THE BI2CASR2CU2O8 SUPERCONDUCTOR WITH CU, AG AND AU OVERLAYERS
- 1993
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Ingår i: Physica. C, Superconductivity. - 0921-4534 .- 1873-2143. ; 218:1-2, s. 103-108
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we present a photoemission study of the interaction of Cu, Ag and Au with clean single-crystal Bi2CaSr2Cu2O8 superconductor surfaces. Both the valence-band and the Bi 5d, O 1 s and Sr 3d core levels were monitored for all overlayers. Cu, Ag and Au were deposited as consecutively thicker layers starting with a third of a monolayer and progressing in steps up to a deposition in the range of eight monolayers. Comparing the results for the different overlayers reveals the Ag overlayer to be less reactive than Au which causes the formation of metallic Bi on cleaved Bi2CaSr2Cu2O8 surface. Cu is shown to be the most reactive of the three metals. The Au and Ag overlayers display an island-growth mode, while Cu grows in a layer-by-layer fashion.
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| 6. |
- Nyholm, R., et al.
(författare)
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SYNCHROTRON-RADIATION SOFT-X-RAY PHOTOEMISSION-STUDY OF LEAD ON BI2CASR2CU2O8
- 1992
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 46:10, s. 6488-6494
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Tidskriftsartikel (refereegranskat)abstract
- In this paper we present a study of the interaction of Pb with a clean single-crystal Bi2CaSr2Cu2O8 superconductor surface based on photoemission and low-energy electron diffraction (LEED). Deposition of Pb on a Bi2CaSr2Cu2O8 Crystal kept at room temperature gives rise to the formation of metallic Bi and oxidized Pb at the interface. This behavior could not be observed when the crystal was kept at 100 K during Pb deposition. For all investigated Pb overlayers on a cold crystal (100 K), surface-sensitive photoelectron spectroscopy revealed the growth of a covering metallic Pb overlayer film. The growth at 100 K, contrary to the growth at room temperature, preserved the original LEED 5 X 1 pattern even for Pb depositions corresponding to a 24-angstrom thick overlayer indicating epitaxial growth. Furthermore, a rigid 0.4-eV shift of the valence band and the Bi 5d core levels is observed upon initial Pb deposition and is tentatively attributed to electron doping.
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| 7. |
- Sandell, A., et al.
(författare)
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THE INNER VALENCE REGION OF CO ADSORBED ON PD(100)
- 1994
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 26:19, s. 10659-10668
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Tidskriftsartikel (refereegranskat)abstract
- The inner valence region of CO/Pd(100) p(2square-root2 x square-root2)R45-degrees has been studied by angular resolved photoemission at the Pd 4d Cooper minimum, and with resonant Auger spectroscopy at photon energies corresponding to the C 1s and O 1s x-ray absorption (XA) maxima of the unoccupied parts of the 2pi*-Pd 4d hybrid (2pi(un)). Previously unobserved inner valence states are revealed in the direct photoemission and are compared with resonant Auger results. The interpretation and assignment of the different spectral features to different main final state configurations are based on energy, symmetry and intensity arguments, as well as comparisons with previous results.
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| 8. |
- Elango, M., et al.
(författare)
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Autoionization phenomena involving the 2p53d configuration of argonlike ions in ionic solids
- 1993
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Ingår i: Physical Review B (Condensed Matter). - 0163-1829. ; 47:18, s. 11736-11748
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Tidskriftsartikel (refereegranskat)abstract
- The photon-induced Auger and photoelectron spectra of the argonlike ions Cl- (in NaCl), K+ (in KCl), Ca2+ (in CaCl2 and CaF2), and Sc3+ (in Sc2O3) have been measured in the vicinity of the L23 absorption edges of these ions. It is shown that at the 2p6→2p53d(4s) resonance a spectator structure appears in the L23M23M23 Auger spectra, which shifts to higher kinetic energies with increasing photon energy. This structure originates from the 3p-23d(4s) final configuration arising as a product of the Auger resonant-inelastic-scattering process of the incident photons. We demonstrate that the peculiarities of this process and the role of the collapsing 3d electron in it can be largely understood in terms of an atomic treatment. The solid-state effects, caused by the crystal field and the lattice polarization, may play an additional role.
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| 9. |
- Grepstad, J. K., et al.
(författare)
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As capping of MBE-grown compound semiconductors; novel opportunities to interface science and device fabrication
- 1994
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Ingår i: Physica Scripta. - 0031-8949. ; 1994:T54, s. 216-225
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Tidskriftsartikel (refereegranskat)abstract
- In situ condensation of an amorphous cap of the high vapour pressure element (i.e. As, Sb) has been found to provide effective protection of molecular beam epitaxy grown compound semiconductor surfaces against ambient contamination. Most work reported so far relates to arsenic-capped AlGaAs. Detailed investigation with surface sensitive structural (RHEED, LEED) and chemical (XPS) probes confirms that the protective cap is conveniently removed by annealing in ultrahigh vaccum environments at a temperature in excess of similar 350 °C. Clean AlxGa1-xAs(001) surfaces with different atomic reconstructions and corresponding (Al)Ga: As composition ratios are now routinely prepared by this technique, and thus offers an ideal testing ground for compound semiconductor surface and interface research. Reconstruction-dependent reactivity at metal/GaAs(001) interfaces is demonstrated, using surface sensitive synchrotron radiation photoelectron spectroscopy. Exploiting the protection offered by the As (Sb) cap for device fabrication purposes (e.g. in selective area epitaxy), demands a suitable method of pattern definition in the amorphous arsenic layer. The cap is shown to be chemically stable versus exposure to standard photolithographic processing chemicals, including photoresist, developer, and acetone (the photoresist solvent). However, the temperature required for thermal decapping is grossly inappropriate for photoresist curing. A novel technique of reactive decapping in a beam of hydrogen radicals (H‒) is shown to be effective at room temperature. This innovation makes pattern definition in the As cap compatible with standard photolithography, and test structures with similar 5 μm linewidth is demonstrated. Scanning electron micrographs unveil the presence of arsenic cap residues along the photoresist mask edges. Moreover, trace amounts of surface gallium oxide and carbon impurities were found with core-level photoelectron spectroscopy. The technique thus needs further refinement, before being useful in fabrication of compound semiconductor device structures.
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| 10. |
- Ruus, R., et al.
(författare)
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M4,5N4,5N4,5 Auger decay spectra of the resonantly excited 3d94f configuration of xenonlike ions in solids
- 1994
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Ingår i: Physical Review B (Condensed Matter). - 0163-1829. ; 49:21, s. 14836-14844
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Tidskriftsartikel (refereegranskat)abstract
- The synchrotron-radiation-induced Auger and photoelectron spectra of the xenonlike ions I- (in CsI), Cs+ (in CsI), Ba2+ (in BaF2), and La3+ (in LaF3) have been measured in the vicinity of the M4,5 absorption edges of these ions. It is shown that the spectra of La and Ba measured at 3d10→3d94f resonances exhibit a very intense 4f-spectator structure which changes its energy and intensity with the energy of the exciting photons. Calculation of the Auger decay of the 3d-14f configuration shows that this structure is due to transitions to the 4d-24f+4p-1 final ionic configuration, the high-energy part of which overlaps the 4d-2 continuum. In the case of Ba this structure coexists with the normal Auger structure which appears as a result of the M4M5N6,7 Coster-Kronig transitions. The spectra of I- contain only the normal M4,5N4,5N4,5 Auger structure related to the 3d-1→4d-2 transitions. The spectra of Cs+ are similar to those of I- with a small admixture of the 4f-spectator-like structure.
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