| 1. |
- Colakerol, L, et al.
(författare)
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Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN
- 2006
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Ingår i: Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier BV. - 0368-2048. ; 152:1-2, s. 25-28
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Tidskriftsartikel (refereegranskat)abstract
- Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film InxGa1-xN alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d(8) state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of InxGa1-x thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases. (c) 2006 Elsevier B.V. All rights reserved.
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| 2. |
- Plucinski, L, et al.
(författare)
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Resonant shake-up satellites in photoemission at the Ga 3p photothreshold in GaN
- 2005
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Ingår i: Solid State Communications. - : Elsevier BV. - 1879-2766 .- 0038-1098. ; 136:4, s. 191-195
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Tidskriftsartikel (refereegranskat)abstract
- Photoemission spectra recorded near the Ga 3p photothreshold from GaN have been found to contain satellites of the main Ga 3d emission line. The intensity of these satellites resonate at this threshold, and are associated with a 3d(8) state. The correlation energies and binding energies for the satellite multiplet have been measured for the satellite and related Auger transitions. The satellite multiplet contains additional constant binding energy features not observed in previous studies of other Ga compounds. The present results are compared with those for Gal? and GaAs.
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| 3. |
- Sankari, R, et al.
(författare)
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Update of the Finnish-Swedish beam line I411 at MAX-lab: Simulations of expected performance
- 2006
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Ingår i: Proceedings of the 20th International Conference on X-ray and Inner-Shell Processes (Radiation Physics and Chemistry). - : Elsevier BV. - 0969-806X. ; 75:11, s. 2000-2003
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Konferensbidrag (refereegranskat)abstract
- In the modified SX-700 monochromator installed at beam line I411, the focusing before the exit slit is achieved by a plane elliptical mirror. Like in the original SX-700 design, the resolution is mainly limited by the slope errors of the focusing mirror. A simple method to improve the resolution is to replace the focusing mirror by one with smaller slope errors. The effects of replacing the refocusing mirror by similar but more accurate in shape are studied both by carrying out ray tracing simulations and by analytical approach. Also the effect of replacing the grating was studied. (c) 2006 Elsevier Ltd. All rights reserved.
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