| 1. |
- Andrijevic, Goran, et al.
(författare)
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A fully integrated low-IF DVB-T receiver architecture
- 2004
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Ingår i: 2004 INTERNATIONAL SYMPOSIUM ON SYSTEM-ON-CHIP, PROCEEDINGS. - 0780385586 ; , s. 189-192
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Konferensbidrag (refereegranskat)abstract
- We propose a fully integrated DVB-T receiver architecture for low cost CMOS implementation. The receiver uses a dual-IF architecture to cover the receive bands from 170 MHz to 862 MHz and a Low-IF of 4.57 MHz. Key performance values meet the DVB-T requirements with competitive performance (Sensitivity 72.5 dBm, Noise Figure 66 dB, Adjacent Channel Protection Ratio-ACPR=43dB, available SNR=28 dB) and suggest that low cost receivers are realistic in volume for the coming digital broadcasting systems.
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| 2. |
- Andrijevic, Goran, et al.
(författare)
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Multistandard receiver for home networking and digital media
- 2004
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Ingår i: 22ND NORCHIP CONFERENCE, PROCEEDINGS. - NEW YORK : IEEE. - 0780385101 ; , s. 131-134
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Konferensbidrag (refereegranskat)abstract
- We propose a fully integrated multistandard receiver architecture that fulfills coming media and networking needs of homes. The receiver uses a dual-IF architecture to cover receive bands from 170 MHz to 920 MHz and the Industrial, Scientific and Medical (ISM) band at 2.4GHz. Key performance values meet the DVB-T, Zigbee, Bluetooth and 802.11b requirements (Sensitivity -72.5dBm. available SNR=28dB. Noise Figure 6.7dB. Adjacent Channel Protection Ratio-ACPR=-44dB, IIP3 = -11 dBm).
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| 3. |
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| 4. |
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A wide-band RF front-end for multiband multistandard high-linearity low-IF wireless receivers
- 2002
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Ingår i: IEEE Journal of Solid-State Circuits. - 0018-9200 .- 1558-173X. ; 37:9, s. 1162-1168
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Tidskriftsartikel (refereegranskat)abstract
- A wide-band radio-frequency (RF) front-end is designed with a balanced combined low-noise amplifier and a switching mixer (a low-noise converter) in RF Si-bipolar process with an f(T) of 25 GHz. The circuit achieves 20-dB conversion gain, higher than -4.5-dBm RF-to-IF IIP3 (+15.5-dBm OIP3) and less than 3.8-dB double-side-band noise figure in 900-MHz (e.g., GSM) and 1.9-GHz (e.g., WCDMA) frequency bands. The -1-dB compression point is -20 dBm at 13-mA dc current consumption from a single 5-V supply. The local-oscillator leakage to the input is less than -56 dBm in the 900-MHz band and less than -63 dBm in the 1.9-GHz band. The -3-dB bandwidth of the amplifier is larger than 3 GHz and a wide-band matching at the input with - 10 to -41-dB S-11 is achieved in the frequency bands of interest by applying a dual-loop wide-band active feedback. The die area is 0.69 x 0.9 mm(2). The circuit is suitable for area-efficient multiband multistandard low-IF receivers.
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| 5. |
- Adeyinka, Adewale, et al.
(författare)
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Comparative cytogenetic and DNA flow cytometric analysis of 242 primary breast carcinomas
- 2003
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Ingår i: Cancer Genetics and Cytogenetics. - 0165-4608. ; 147:1, s. 62-67
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Tidskriftsartikel (refereegranskat)abstract
- The cytogenetic and DNA flow cytometric findings in 242 breast carcinomas were compared. The combined use of both techniques improved the detection of abnormal cell populations from 65% by cytogenetic analysis alone and 59% by DNA flow cytometric analysis alone to 84%. Informative and comparable cytogenetic and flow cytometric data were obtained for 155 tumors. Among these 155 tumors, there was good concordance (64%) between the estimates of genomic changes by the two methods. Most discrepancies were among the DNA-diploid cases, where cytogenetic analysis detected small genomic changes. There were, however, also some exceptions in which large genomic changes detected by one method were missed by the other. Of the specific breast cancer-associated cytogenetic aberrations subjected to separate correlation analysis, polysomy for chromosome 20 was significantly associated with a high S-phase fraction, whereas loss of the long arm of chromosome 16 and/or the presence of a der(1;16) were significantly associated with a low S-phase fraction. Our data show that cytogenetic and DNA flow cytometric analyses of breast carcinomas give largely comparable results, and that combining data from both methods significantly improves the information obtained by either technique used alone on the genetic abnormalities in these tumors.
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| 6. |
- Anderson, H, et al.
(författare)
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Familial breast and ovarian cancer : a Swedish population-based register study
- 2000
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Ingår i: American Journal of Epidemiology. - 0002-9262. ; 152:12, s. 63-1154
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Tidskriftsartikel (refereegranskat)abstract
- A cohort of offspring of mothers with breast or ovarian cancer diagnosed in 1958-1993 was established using Swedish population-based registers. The children (n = 158,041) were born between 1941 and 1993, and their cancer incidence was followed between 1961 and 1993. A total of 3,257 tumors in 3,102 children were found. Observed numbers of cases were compared with expected numbers based on national calendar year-, age-, and sex-specific incidences. For daughters of women with breast cancer, the standardized morbidity ratios for being diagnosed with breast cancer and ovarian cancer before age 50 years were 1.99 (95% confidence interval (CI): 1.86, 2.14) and 1.28 (95% CI: 1.05, 1.54), respectively. The corresponding figures for daughters of women with ovarian cancer were 1.79 (95% CI: 1.55, 2.07) and 2.38 (95% CI: 1.77, 3.12). The risks were raised if the mother's cancer was diagnosed at a young age, the mother had multiple breast/ovarian diagnoses, or there was a sister with breast/ovarian cancer. Among all offspring, increased risks were found for thyroid cancer, testicular cancer, and malignant melanoma, while lung cancer risk was decreased if the mother had had breast cancer. The authors developed a variance estimator for the standardized morbidity ratio to cope with overdispersion due to dependency within families.
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| 7. |
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| 8. |
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| 9. |
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| 10. |
- Ankarcrona, Johan, et al.
(författare)
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Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors
- 2004
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 48:5, s. 789-797
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Tidskriftsartikel (refereegranskat)abstract
- High frequency substrate losses for RF MOSFETs are analyzed using numerical device simulation. The results show that losses in devices made on low resistivity substrate occur through the substrate while losses in devices made on high resistivity substrate in the high frequency region occur along the surface through the device (source–drain). An equivalent circuit model is developed which accurately describes the off-state losses. Based on the model significant improvements in terms of output resistance are demonstrated, using an improved device on high resistivity substrate.
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