| 1. |
- Ankarcrona, Johan, et al.
(författare)
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Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors
- 2004
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 48:5, s. 789-797
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Tidskriftsartikel (refereegranskat)abstract
- High frequency substrate losses for RF MOSFETs are analyzed using numerical device simulation. The results show that losses in devices made on low resistivity substrate occur through the substrate while losses in devices made on high resistivity substrate in the high frequency region occur along the surface through the device (source–drain). An equivalent circuit model is developed which accurately describes the off-state losses. Based on the model significant improvements in terms of output resistance are demonstrated, using an improved device on high resistivity substrate.
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| 2. |
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| 3. |
- Heinle, Ulrich, et al.
(författare)
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High Voltage Devices on SOI
- 2001
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Ingår i: Presented at the Franco-Swedish Workshop on SOI, March 8-9, Grenoble, France.
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Konferensbidrag (refereegranskat)
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| 4. |
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| 5. |
- Vestling, Lars, et al.
(författare)
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Analysis and Design of a Low-Voltage High-Frequency LDMOS Transistor
- 2002
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 49:6, s. 976-980
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Tidskriftsartikel (refereegranskat)abstract
- For a low voltage lateral double-diffused MOS (LDMOS) transistor, the output performance has been improved in terms of fMAX. This is done by decreasing the output capacitance and thus decreasing the total output conductance. Extraction of the model parameters has been made and the most efficient parameter to improve was identified and linked to a specific part of the transistor structure. Layout changes in the n-well/p-base region were done as the result of the model analyses and finally, the modified devices were processed. Measurements on the improved devices showed results that closely, matched the expected, and fMAX was increased with 30% and only a slight decrease in f T. Finally, the capacitance reduction in the n-well/p-base junction was measured by direct. measurements
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