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| 2. |
- Abermann, S., et al.
(författare)
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Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric
- 2007
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 84:5-8, s. 1635-1638
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Tidskriftsartikel (refereegranskat)abstract
- We evaluate various metal gate/high-k/Si capacitors by their resulting electrical characteristics. Therefore, we process MOS gate stacks incorporating aluminium (Al), nickel (Ni), titanium-nitride (TiN), and molybdenum (Mo) as the gate material, and metal organic chemical vapour deposited (MOCVD) ZrO2 and HfO2 as the gate dielectric, respectively. The influence of the processing sequence - especially of the thermal annealing treatment - on the electrical characteristics of the various gate stacks is being investigated. Whereas post metallization annealing in forming gas atmosphere improves capacitance-voltage behaviour (due to reduced interface-, and oxide charge density), current-voltage characteristics degrade due to a higher leakage current after thermal treatment at higher temperatures. The Flatband-voltage values for the TiN-, Mo-, and Ni-capacitors indicate mid-gap pinning of the metal gates, however, Ni seems to be thermally unstable on ZrO2, at least within the process scheme we applied.
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| 4. |
- Elgqvist, Jörgen, 1963, et al.
(författare)
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Administered activity and metastatic cure probability during radioimmunotherapy of ovarian cancer in nude mice with 211At-MX35 F(ab')2.
- 2006
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Ingår i: International journal of radiation oncology, biology, physics. - : Elsevier BV. - 1879-355X .- 0360-3016. ; 66:4, s. 1228-37
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Tidskriftsartikel (refereegranskat)abstract
- PURPOSE: To elucidate the therapeutic efficacy of alpha-radioimmunotherapy of ovarian cancer in mice. This study: (i) estimated the minimum required activity (MRA), giving a reasonable high therapeutic efficacy; and (ii) calculated the specific energy to tumor cell nuclei and the metastatic cure probability (MCP) using various assumptions regarding monoclonal-antibody (mAb) distribution in measured tumors. The study was performed using the alpha-particle emitter Astatine-211 (211At) labeled to the mAb MX35 F(ab')2. METHODS AND MATERIALS: Animals were inoculated intraperitoneally with approximately 1 x 10(7) cells of the cell line NIH:OVCAR-3. Four weeks later animals were treated with 25, 50, 100, or 200 kBq 211At-MX35 F(ab')2 (n = 74). Another group of animals was treated with a nonspecific mAb: 100 kBq 211At-Rituximab F(ab')2 (n = 18). Eight weeks after treatment the animals were sacrificed and presence of macro- and microscopic tumors and ascites was determined. An MCP model was developed and compared with the experimentally determined tumor-free fraction (TFF). RESULTS: When treatment was given 4 weeks after cell inoculation, the TFFs were 25%, 22%, 50%, and 61% after treatment with 25, 50, 100, or 200 kBq (211)At-MX35 F(ab')2, respectively, the specific energy to irradiated cell nuclei varying between approximately 2 and approximately 400 Gy. CONCLUSION: As a significant increase in the therapeutic efficacy was observed between the activity levels of 50 and 100 kBq (TFF increase from 22% to 50%), the conclusion was that the MRA is approximately 100 kBq (211)At-MX35 F(ab')2. MCP was most consistent with the TFF when assuming a diffusion depth of 30 mum of the mAbs in the tumors.
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| 5. |
- Li, Ling-Guang, et al.
(författare)
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Oxide-Free Silicon to Silicon Carbide Heterobond
- 2008
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Ingår i: ESC Transactions. - : The Electrochemical Society. - 1938-6737 .- 1938-5862. ; 16:8, s. 377-383
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Tidskriftsartikel (refereegranskat)abstract
- Thin crystalline device layersof Si were bonded to Si-faced SiC wafers, with eithera chemical or a thermal oxide interface layer. The interfacethermal oxide was successfully removed by oxygen out-diffusion for 2.5h in an Ar atmosphere at 1250 oC. XTEM micrographsshowed that an abrupt transition between Si and SiC withcomplete removal of the interlayer oxide had been obtained. Stressgenerated during the cool-down process after oxygen out-diffusion was shownto be compressive. IR imaging and an optical microscopy verifiedthat no cracks occurred during cool-down.
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| 6. |
- Martin, David, et al.
(författare)
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Buried aluminum nitride insulator for improving thermal conduction in SOI
- 2008
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Ingår i: Proceedings of IEEE SOI Conference. ; , s. 105-106
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Konferensbidrag (refereegranskat)abstract
- A new Si-on-AlN substrate has been fabricated and characterised both electrically and thermally. Thermal properties of the new substrate have been identified with a thermal resistance reduced by half to 47.5 K/W compared to reference SOI. Further improvements in fabrication of these new SOI substrates with regard to the alpha-Si layer, oxide layer and in AlN film quality itself would utillise the thermal conductivity of AlN even more.
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| 7. |
- Martin, David, et al.
(författare)
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Optimisation of a smooth multilayer Nickel Silicide surface for ALN growth
- 2008
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Ingår i: Journal of Physics, Conference Series. - : IOP Publishing Ltd. - 1742-6588 .- 1742-6596. ; 100:4, s. 042014-
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Tidskriftsartikel (refereegranskat)abstract
- For use in thin film electroacoustic (TEA) technology a few hundred nanometrethick nickel silicide (NiSi) electrode would need to be fabricated. A complete fabrication process for the formation of over 200 nm thick silicide films has been optimised for use as an electroacoustic electrode. Optimisation of silicidation temperature and identification of the mono phase of silicide is demonstrated. Thick electrodes are formed by depositing multilayers of silicon and nickel pairs onto silicon (Si) substrates before rapid thermal annealing. The numbers of multilayers and relative material thicknesses are optimized for both surface roughness and electrical resistivity. The growth of textured aluminium nitride (AlN) has been investigated on the optimised surfaces.
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| 8. |
- Martin, David, et al.
(författare)
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Thick NiSi Electrodes for AlN Electroacoustic Applications
- 2009
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Ingår i: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 12:5, s. H182-H184
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Tidskriftsartikel (refereegranskat)abstract
- Theuse of thick NiSi electrodes in electroacoustic resonators allows front-endintegration with integrated circuit technology. Problems are identified in theformation of thick nickel silicide (NiSi) electrodes via a singledeposition of Ni onto blank Si wafers. An alternative fabricationprocess based on the deposition and silicidation of a multilayerfilm is presented. The films were found to have lowresistivity and smooth surfaces, with the layered structure preserved evenafter silicidation. Textured piezoelectric films of (002) wurtzite AlN demonstrateda diffraction-peak width that narrows to 3.5° when deposited ona thick 10 pair NiSi film.
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| 9. |
- Qiu, Zhijun, et al.
(författare)
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Role of Si implantation in control of underlap length in Schottky-barrier source/drain MOSFETs on ultrathin body SOI
- 2008
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Ingår i: Proceedings of ULIS. - NEW YORK : IEEE. ; , s. 175-178, s. 175-178
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Konferensbidrag (refereegranskat)abstract
- This works demonstrates a novel approach using Si implantation prior to Pt deposition and PtSi formation to control the underlap length between the PtSi source/drain regions to the gate in Schottky-Barrier (SB-) MOSFETs. Dopant segregation at the PtSi/Si interface is used to enhance device performance. With the lon /Ioff current ratio as an indicator, optimized Si implant doses are found for both n- and p-channel SB-MOSFETs. Through an effective barrier width, the underlap length has direct implication on the leakage current.
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