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- Hakansson, M C, et al.
(författare)
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The electronic structure of In- and As-terminated InAs(001) surfaces
- 1997
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Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 374:1-3, s. 73-79
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Tidskriftsartikel (refereegranskat)abstract
- The InAs(001) 2 x 4 and 4 x 2 surfaces have been investigated by angle-resolved photoemission. The X(3) and X(5) points were found to be located 6.0 and 2.7 eV below the valence band maximum, respectively, and the dispersion of bulk bands along the Gamma-X direction in the bulk Brillouin zone were well described by a theoretical calculation. From angle-resolved valence band spectra measured along the high symmetry directions [110] and [1(1) over bar0$], three surface induced stares were identified on both the InAs(001)4 x 2 and the InAs(001)2 x 4 surface. (C) 1997 Elsevier Science B.V.
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7. |
- von Knorring, L, et al.
(författare)
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Cost-effectiveness in the prevention of suicide.
- 1999
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Ingår i: In: Manage or Perish? The challenge of managed mental health in Europe. - : Plenum Press, Geneve 1999.
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Bokkapitel (övrigt vetenskapligt/konstnärligt)
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- Andersson, C B M, et al.
(författare)
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Surface atomic structure of InAs((111)over-bar)2x2 and InSb((111)over-bar)2x2 studied by core level spectroscopy
- 1996
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 347:1-2, s. 199-206
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Tidskriftsartikel (refereegranskat)abstract
- Surface sensitive high resolution core level spectroscopy has been applied to the molecular beam epitaxy grown InAs((111) over bar)2 x 2 and InSb((111) over bar)2 x 2 surfaces. For both systems the In 4d core level consists of one dominating component while the Group V core levels are deconvoluted into four components. This analysis is consistent with a surface model where the topmost layer consists entirely of arsenic or antimony. In this model, Group V atoms form trimers bound to Group V atoms in the first double layer, leaving a single Group V rest atom per unit cell.
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