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Metal nano-floating...
Metal nano-floating gate memory devices fabricated at low temperature
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Koliopoulou, S (författare)
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Dimitrakis, P (författare)
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Goustouridis, D (författare)
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Normand, P (författare)
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- Pearson, Christopher (författare)
- KTH
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Petty, M C (författare)
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- Radamson, Henry H (författare)
- KTH,Integrerade komponenter och kretsar
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Tsoukalas, D (författare)
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(creator_code:org_t)
- Elsevier BV, 2006
- 2006
- Engelska.
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 83:4-9, s. 1563-1566
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- In this communication, we report on the realization of low-temperature processed Electrically Erasable Programmable Read-Only Memory (EEPROM) like device with embedded gold nanoparticles. The realization is based on the fabrication of a V-groove SiGe Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the functionalization of a gate oxide followed by self-assembly of gold nanoparticles and finally, the deposition of an organic insulator by Langmuir-Blodgett (LB) technique. Such structures were processed at a temperature lower than 400 degrees C. The electrical characteristics of the final hybrid Metal Insulator Semiconductor FET (MISFET) memory cells were evaluated in terms of memory window and program/erase voltage pulses. A model describing the memory characteristics, based on the electronic properties of the gate stack materials, is presented.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- nanoparticles
- SiGe
- memory
- wafer bonding
- Langmuir-Blodgett deposition
- hybrid electronics
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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