| 1. |
- Li, Jiayu, et al.
(författare)
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Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures
- 2018
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 123:6
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Tidskriftsartikel (refereegranskat)abstract
- Graphene/hexagonal boron nitride (G/h-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we report on transport measurements of nearly 0°-twisted G/h-BN heterostructures. The heterostructures investigated are prepared by dry transfer and thermally annealing processes and are in the low mobility regime (approximately 3000 cm2 V-1s-1 at 1.9 K). The replica Dirac spectra and Hofstadter butterfly spectra are observed on the hole transport side, but not on the electron transport side, of the heterostructures. We associate the observed electron-hole asymmetry with the presence of a large difference between the opened gaps in the conduction and valence bands and a strong enhancement in the interband contribution to the conductivity on the electron transport side in the low-mobility G/h-BN heterostructures. We also show that the gaps opened at the central Dirac point and the hole-branch secondary Dirac point are large, suggesting the presence of strong graphene-substrate interaction and electron-electron interaction in our G/h-BN heterostructures. Our results provide additional helpful insight into the transport mechanism in G/h-BN heterostructures.
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| 2. |
- Meng, Mengmeng, et al.
(författare)
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Strong spin-orbit interaction and magnetotransport in semiconductor Bi2O2Se nanoplates
- 2018
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Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3364 .- 2040-3372. ; 10:6, s. 2704-2710
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Tidskriftsartikel (refereegranskat)abstract
- Semiconductor Bi2O2Se nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport properties with potential application in nanoelectronics. It is also strongly expected that the 2D Bi2O2Se nanolayers can be an excellent material platform for developing spintronic and topological quantum devices if the presence of strong spin-orbit interaction in the 2D materials can be experimentally demonstrated. Herein, we report the experimental determination of the strength of spin-orbit interactions in Bi2O2Se nanoplates through magnetotransport measurements. The nanoplates are epitaxially grown by chemical vapor deposition, and the magnetotransport measurements are performed at low temperatures. The measured magnetoconductance exhibits a crossover behavior from weak antilocalization to weak localization at low magnetic fields with increasing temperature or decreasing back gate voltage. We have analyzed this transition behavior of magnetoconductance based on an interference theory, which describes quantum correction to the magnetoconductance of a 2D system in the presence of spin-orbit interaction. Dephasing length and spin relaxation length are extracted from the magnetoconductance measurements. Compared to the case of other semiconductor nanostructures, the extracted relatively short spin relaxation length of ∼150 nm indicates the existence of a strong spin-orbit interaction in Bi2O2Se nanolayers.
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| 3. |
- Zhang, G. Q., et al.
(författare)
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Low-field magnetotransport in graphene cavity devices
- 2018
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 29:20
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Tidskriftsartikel (refereegranskat)abstract
- Confinement and edge structures are known to play significant roles in the electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetotransport measurements of lithographically patterned graphene cavity nanodevices. It is found that the evolution of the low-field magnetoconductance characteristics with varying carrier density exhibits different behaviors in graphene cavity and bulk graphene devices. In the graphene cavity devices, we observed that intravalley scattering becomes dominant as the Fermi level gets close to the Dirac point. We associate this enhanced intravalley scattering to the effect of charge inhomogeneities and edge disorder in the confined graphene nanostructures. We also observed that the dephasing rate of carriers in the cavity devices follows a parabolic temperature dependence, indicating that the direct Coulomb interaction scattering mechanism governs the dephasing at low temperatures. Our results demonstrate the importance of confinement in carrier transport in graphene nanostructure devices.
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| 4. |
- Zhou, Yu, et al.
(författare)
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Revealing the Contribution of Individual Factors to Hydrogen Evolution Reaction Catalytic Activity
- 2018
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Ingår i: Advanced Materials. - : Wiley-VCH Verlagsgesellschaft. - 0935-9648 .- 1521-4095. ; 30:18
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Tidskriftsartikel (refereegranskat)abstract
- For the electrochemical hydrogen evolution reaction (HER), the electrical properties of catalysts can play an important role in influencing the overall catalytic activity. This is particularly important for semiconducting HER catalysts such as MoS2, which has been extensively studied over the last decade. Herein, on-chip microreactors on two model catalysts, semiconducting MoS2 and semimetallic WTe2, are employed to extract the effects of individual factors and study their relations with the HER catalytic activity. It is shown that electron injection at the catalyst/current collector interface and intralayer and interlayer charge transport within the catalyst can be more important than thermodynamic energy considerations. For WTe2, the site-dependent activities and the relations of the pure thermodynamics to the overall activity are measured and established, as the microreactors allow precise measurements of the type and area of the catalytic sites. The approach presents opportunities to study electrochemical reactions systematically to help establish rational design principles for future electrocatalysts.
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