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Träfflista för sökning "WFRF:(Pepe P) srt2:(2000-2004)"

Sökning: WFRF:(Pepe P) > (2000-2004)

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1.
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2.
  • Ahuja, Rajeev, et al. (författare)
  • Optical properties of 4H-SiC
  • 2002
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 91:4, s. 2099-2103
  • Tidskriftsartikel (refereegranskat)abstract
    • The optical band gap energy and the dielectric functions of n-type 4H-SiC have been investigated experimentally by transmission spectroscopy and spectroscopic ellipsometry and theoretically by an ab initio full-potential linear muffin-tin-orbital method. We present the real and imaginary parts of the dielectric functions, resolved into the transverse and longitudinal photon moment a, and we show that the anisotropy is small in 4H-SiC. The measurements and the calculations fall closely together in a wide range of energies.
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3.
  • Ahuja, R., et al. (författare)
  • Optical properties of 4H-SiC
  • 2002
  • Ingår i: J. Appl. Phys.. ; 91:4, s. 2099-2103
  • Tidskriftsartikel (refereegranskat)
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4.
  • da Silva, A. F., et al. (författare)
  • Electrical resistivity of acceptor carbon in GaAs
  • 2004
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 95:5, s. 2532-2535
  • Tidskriftsartikel (refereegranskat)abstract
    • The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 10(17) and 10(19) cm(-3). Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach at similar temperatures and doping concentrations. The critical impurity concentration for the metal-nonmetal transition was found to be about 10(18) cm(-3).
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5.
  • Moyses, Araujo C., et al. (författare)
  • Band-gap shift of the heavily doped single- and double-donor systems Si : Bi and Si
  • 2000
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 62:19, s. 12882-12887
  • Tidskriftsartikel (refereegranskat)abstract
    • The band-gap shift of the heavily single and double-donor doped systems Si:Bi and Si:P,Bi, prepared by ion implantation, was investigated theoretically and experimentally at room temperature. The calculations were carried out within a framework of the random-phase approximation and the temperature and different many-body effects were taken into account. The experimental data were obtained with photoconductivity measurements. Theoretical and experimental results fall closely together in a wide range of donor concentration.
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  • Resultat 1-5 av 5

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