Deep-level emissions influenced by O and Zn implantations in ZnO

• A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1x10(17)/cm(3) and 5x10(19)/cm(3). The samples were thermally treated in an oxygen gas environment after the implantation. The results clearly show the influence of O and Zn implantations on the deep-level emission. By comparing the photoluminescence spectra for the samples with different implantations, we can conclude that the V-Zn is responsible to the observed deep-level emission. In addition, a novel transition at the emission energy of 3.08 eV at 77 K appears in the O-implanted sample with 5x10(19)/cm(3) implantation concentration. The novel emission is tentatively identified as O-antisite O-Zn.

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NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

TECHNOLOGY

TEKNIKVETENSKAP

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