Oxygen content and depth profiling in silicon surface technology studied by the 16O(α, α)16O resonance at 3.045 MeV

• The use of the t6O(o,o)160 elastic scattering resonance reaction forthe study of low concentration of oxygen such as found in interfacesin silicon technology is described. We have investigated the depth resolution and the limit of the sensitivity that can be obtained with thismethod. The method has been applied to the study of AlrQ{r "sandwich" film structures and to Au and amorphous Ge contacts to silicon.

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NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

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