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- Gilet, Ph., et al.
(författare)
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1.3 μm VCSELs : InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots- Three candidates as active material
- 2007
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Ingår i: Vertical - Cavity Surface - Emitting Lasers XI. - San Jose, CA : SPIE. ; , s. F4840-F4840
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Konferensbidrag (refereegranskat)abstract
- In this article, we report our results on 1.3ÎŒm VCSELs for optical interconnection applications. Room temperature continuous-wave lasing operation is demonstrated for top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GalnNAs/GaAs (B) multiple quantum wells (MQW) or InAs/GaAs (C) quantum dots (QD). Conventional epitaxial structures grown respectively by Metal Organic Vapour Phase Epitaxy (MOVPE), Molecular Beam Epitaxy (MBE) and MBE, contain rully doped GaAs/AlGaAs DBRs. All three epilayers are processed in the same way. Current and optical confinement are realized by selective wet oxidation. Circular apertures from 2 ÎŒm to 16 ÎŒm diameters are defined. At room temperature and in continuous wave operation, all three systems exhibit lasing operation at wavelengths above 1 275nm and reached 1 300nm for material (A). Typical threshold currents are in the range [1-10]mA and are strongly dependent firstly on oxide diameter and secondly on temperature. Room temperature cw maximum output power corresponds respectively to 1.77mW, 0.5mW and 0.6mW. By increasing driving current, multimode operation occurs at different level depending on the oxide diameter. In case (A), non conventional modal behaviors will be presented and explained by the presence of specific oxide modes. Thermal behaviors of the different devices have been compared. In case (A) and (C) we obtain a negative T0. We will conclude on the different active materials in terms of performances with respect to 1300nm VCSEL applications.
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| 2. |
- Pougeoise, E., et al.
(författare)
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1.3 ÎŒm strained InGaAs quantum well VCSELs : Operation characteristics and transverse modes analysis
- 2006
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Ingår i: Vertical-Cavity Surface-Emitting Lasers X. - San Jose, CA : SPIE. ; , s. 13207-13207
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Konferensbidrag (refereegranskat)abstract
- We report results on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs) for optical interconnection applications. The structure was grown by metalorganic vapour-phase epitaxy (MOVPE) and processed as top p-type DBR oxide-confined device. Our VCSELs exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The thermal behaviour of our devices is explained through the threshold current-temperature characteristics. Furthermore, the effective index model is used to understand the modal behaviour.
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| 3. |
- Pougeoise, E., et al.
(författare)
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Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs
- 2006
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Ingår i: Proc SPIE Int Soc Opt Eng. - : SPIE. - 0819462411 - 9780819462411
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Konferensbidrag (refereegranskat)abstract
- In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-phase epitaxy (MOVPE). These lasers exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm at room temperature is reached for a 4 μm oxide diameter VCSEL. The particular design of the active layer based on a large detuning between the gain maximum and the cavity resonance gives our devices a very specific thermal and modal behaviour. Therefore, we study the spectral and spatial distributions of the transverse modes by near field scanning optical microscopy using a micropolymer tip at the end of an optical fibre.
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| 4. |
- Pougeoise, E., et al.
(författare)
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Strained InGaAs quantum well vertical cavity surface emitting lasers emitting at 1.3 mu m
- 2006
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 42:10, s. 584-586
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Tidskriftsartikel (refereegranskat)abstract
- Results on strained InGaAs quantum well vertical cavity surface emitting lasers for optical interconnection applications are reported. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The metal-organic vapour-phase epitaxy grown structure was processed as top p-type distribute Bragg reflector oxide-confined devices.
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