| 1. |
- Li, Xin, et al.
(författare)
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Effects of domain size on x-ray absorption spectra of boron nitride doped graphenes
- 2016
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 109:8
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Tidskriftsartikel (refereegranskat)abstract
- Doping is an efficient way to open the zero band gap of graphene. The control of the dopant domain size allows us to tailor the electronic structure and the properties of the graphene. We have studied the electronic structure of boron nitride doped graphenes with different domain sizes by simulating their near-edge X-ray absorption fine structure (NEXAFS) spectra at the N K-edge. Six different doping configurations (five quantum dot type and one phase-separated zigzag-edged type) were chosen, and N K-edge NEXAFS spectra were calculated with large truncated cluster models by using the density functional theory with hybrid functional and the equivalent core hole approximation. The opening of the band gap as a function of the domain size is revealed. We found that nitrogens in the dopant boundary contribute a weaker, red-shifted pi* peak in the spectra as compared to those in the dopant domain center. The shift is related to the fact that these interfacial nitrogens dominate the lowest conduction band of the system. Upon increasing the domain size, the ratio of interfacial atom decreases, which leads to a blue shift of the pi* peak in the total NEXAFS spectra. The spectral evolution agrees well with experiments measured at different BN-dopant concentrations and approaches to that of a pristine h-BN sheet.
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| 2. |
- Tu, Chien Ming, et al.
(författare)
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Helicity-dependent terahertz radiation from topological insulator Sb2Te3 thin film by femtosecond optical excitation
- 2016
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Ingår i: 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016. - 9781467384858
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Konferensbidrag (refereegranskat)abstract
- We report on terahertz radiation from topological insulator (TI) Sb2Te3 thin film under ultrafast optical excitation with different helicity. Polarity-reversals of the emitted THz radiation were observed as the helicity of optical pulses reversed. The observed phenomena are coincident with the characteristics of the helicity-dependent photocurrent on TIs. Our work demonstrates the potential applications of surface photocurrents on TIs for opto-spintronics devices.
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| 3. |
- Wang, Bo-Yao, et al.
(författare)
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Nonlinear bandgap opening behavior of BN co-doped graphene
- 2016
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Ingår i: Carbon. - : Elsevier. - 0008-6223 .- 1873-3891. ; 107, s. 857-864
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Tidskriftsartikel (refereegranskat)abstract
- We have demonstrated a nonlinear behavior for the bandgap opening of doped graphene by controlling the concentration of B and N co-dopants. X-ray absorption and emission spectra reveal that the bandgap increases from 0 to 0.6 eV as the concentration of BN dopants is increased from 0 to 6%, while the bandgap closes when the doping concentration becomes 56%. This nonlinear behavior of bandgap opening of the BN-doped graphene depending on the BN concentrations is consistent with the valenceband photoemission spectroscopic measurements. The spatially resolved B, N and C K-edge scanning transmission x-ray microscopy and their x-ray absorption near- edge structure spectra all support the scenario of the development of h-BN-like domains at high concentrations of BN. Ab initio calculation, by taking into account of the strong correlation between the bandgap and the geometry/concentration of the dopant, has been performed with various BN-dopant nano-domains embedded in the graphene monolayer to verify the unique bandgap behavior. Based on the experimental measurements and ab initio calculation, we propose the progressive formation of a phase-separated zigzag-edged BN domain from BN quantum dots with increasing BN-dopant concentration to explain the extraordinary nonlinear behavior of bandgap opening of BN-doped graphene sheets. This study reveals a new way to engineer the bandgap of low-dimensional systems.
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