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2. |
- Boyle, P, et al.
(författare)
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Need for global action for cancer control
- 2008
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Ingår i: Annals of oncology : official journal of the European Society for Medical Oncology. - : Elsevier BV. - 1569-8041. ; 19:9, s. 1519-1521
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
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3. |
- Saarikoski, H, et al.
(författare)
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Stability of vortex structures in quantum dots
- 2005
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 71:3
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Tidskriftsartikel (refereegranskat)abstract
- We study the stability and structure of vortices emerging in two-dimensional quantum dots in high magnetic fields. Our results obtained with exact diagonalization and density-functional calculations show that vortex structures can be found in various confining potentials. In nonsymmetric external potentials we find off-electron vortices that are localized giving rise to charge deficiency or holes in the electron density with rotating currents around them. We discuss the role of quantum fluctuations and show that vortex formation is observable in the energetics of the system. Our findings suggest that vortices can be used to characterize the solutions in high magnetic fields, giving insight into the underlying internal structure of the electronic wave function.
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4. |
- Tuomisto, F, et al.
(författare)
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Dissociation of V-Ga-O-N complexes in HVPE GaN by high pressure and high temperature annealing
- 2006
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Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 243:7, s. 1436-1440
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Tidskriftsartikel (refereegranskat)abstract
- We have used positron annihilation spectroscopy to study the high-pressure annealing induced thermal recovery of vacancy defects in free-standing GaN grown by hydride vapor phase epitaxy (HYPE). The results show that the in-grown Ga vacancy complexes recover after annealing at 1500-1700 K. Comparison of the experimental positron data with ab-initio calculations indicates that the Doppler broadening measurement of the electron momentum distribution is sensitive enough to distinguish between the N and O atoms surrounding the Ga vacancy. We show that the difference between the isolated V-Ga in electron irradiated GaN and the V-Ga-O-N complexes in highly O-doped GaN is clear, and the Ga vacancy related defect complexes that start dissociating at 1500 K can be identified as V-Ga-O-N pairs.
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