| 1. |
- Ablikim, M., et al.
(författare)
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Measurements of (XcJ)-> K+K-K+K- decays
- 2006
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Ingår i: Physics Letters B. - : Elsevier BV. - 0370-2693 .- 1873-2445. ; 642:3, s. 197-202
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Tidskriftsartikel (refereegranskat)abstract
- Using 14M psi(2S) events taken with the BESII detector, chi(cJ) -> 2(K+K-) decays are studied. For the four-kaon final state, the branching fractions are B(chi(c0,1,2) ->.2(K+K-)) = (3.48 +/- 0.23 +/- 0.47) x 10(-3), (0.70 +/- 0.13 +/- 0.10) x 10(-3), and (2.17 +/- 0.20 +/- 0.31) x 10(-3). For the phi K+K- final state, the branching fractions, which are measured for the first time, are B(chi(c0,1,2) -> phi K+K-) = (1.03 +/- 0.22 +/- 0.15) x 10(-3), (0.46 +/- 0.16 +/- 0.06) x 10(-3), and (1.67 +/- 0.26 +/- 0.24) x 10(-4). For the phi phi final state, B(chi(c0,2) -> phi phi) = (0.94 +/- 0.21 +/- 0.13) x 10(-3) and (1.70 +/- 0.30 +/- 0.25) x 10(-3).
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| 2. |
- Armesto, N., et al.
(författare)
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Heavy-ion collisions at the LHC-Last call for predictions
- 2008
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Ingår i: Journal of Physics G. - : IOP Publishing. - 0954-3899 .- 1361-6471. ; 35:5, s. 054001-
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Forskningsöversikt (refereegranskat)abstract
- This writeup is a compilation of the predictions for the forthcoming Heavy Ion Program at the Large Hadron Collider, as presented at the CERN Theory Institute 'Heavy Ion Collisions at the LHC - Last Call for Predictions', held from 14th May to 10th June 2007.
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| 3. |
- He, G. S., et al.
(författare)
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Stimulated Rayleigh-Bragg Scattering From a Two-Photon Absorbing CdSe-CdS-ZnS Quantum-Rods System : Optical Power Limiting and Phase-Conjugation
- 2008
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Ingår i: IEEE Journal of Quantum Electronics. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9197 .- 1558-1713. ; 44:9-10, s. 894-901
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Tidskriftsartikel (refereegranskat)abstract
- This work reports the properties of stimulated Rayleigh-Bragg scattering (SRBS) from a two-photon absorbing CdSe-Cds-ZnS quantum-rods (QRs) solution in chloroform, excited by 1064-nm and similar to 13-ns laser pulses. The two-photon absorbing capability of the scattering medium, as well as the pump threshold, spectral structure, and pulse waveforms of the backward stimulated scattering were measured. Comparing to a pure solvent or an organic dye-solution, the semiconductor QR system has many advantages such as the lower pump threshold, higher energy transfer efficiency, and better photo-physical and photo-chemical stability. The measured output/input characteristic curve shows that the backward SRBS can enhance the optical power limiting performance that is based on two-photon absorption, backward stimulated scattering, and other nonlinear absorption mechanisms. In addition, the backward SRBS beam from our sample medium exhibits a fairly good optical phase-conjugation capability, so that the distortion influence from an inserted aberrator can be automatically removed.
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| 4. |
- Höglund, Linda, 1974-, et al.
(författare)
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Quantum dots-in-a-well infrared photodetectors for long wavelength infrared detection
- 2006
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Ingår i: Proceedings of SPIE. - Bellingham, Wash. : SPIE - International Society for Optical Engineering. - 9780819464996 ; 6401, s. 1-640109
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Konferensbidrag (refereegranskat)abstract
- We report on a quantum dots-in-a-well infrared photodetector (DWELL QDIP) grown by metal organic vapor phase epitaxy. The DWELL QDIP consisted of ten stacked InAs/In0.5Ga0.85As/GaAs QD layers embedded between n-doped contact layers. The density of the QDs was about 9 × 10 10 cm-2 per QD layer. The energy level structure of the DWELL was revealed by optical measurements of interband transitions, and from a comparison with this energy level scheme the origin of the photocurrent peaks could be identified. The main intersubband transition contributing to the photocurrent was associated with the quantum dot ground state to the quantum well excited state transition. The performance of the DWELL QDIPs was evaluated regarding responsivity and dark current for temperatures between 15 K and 77 K. The photocurrent spectrum was dominated by a LWIR peak, with a peak wavelength at 8.4 μm and a full width at half maximum (FWHM) of 1.1 μm. At an operating temperature of 65 K, the peak responsivity was 30 mA/W at an applied bias of 4 V and the dark current was 1.2×10-5 A/cm2. Wavelength tuning from 8.4 μm to 9.5 μm was demonstrated, by reversing the bias of the detector.
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| 5. |
- Höglund, Linda, et al.
(författare)
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Tuning of the detection wavelength in quantum dots-in-a-well infrared photodetectors
- 2008
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Ingår i: Proceedings of SPIE, 6940, Infrared Technology and Applications XXXIV, 694002. - : SPIE. - 9780819471314
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Konferensbidrag (refereegranskat)abstract
- In this study, bias mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well (DWELL) infrared photodetectors. In DWELL structures, intersubband transitions in the conduction band occur from a discrete state in the quantum dot to a subband inthe quantum well. Compared to "conventional" quantum dot infrared photodetectors, where the transitions take place between different discrete bands in thequantum dots, new possibilities to tune the detection wavelength window are opened up, partly by varying the quantum dot energy levels and partly by adjusting the width and composition of the quantum well. In the DWELL structure used, an asymmetric positioning of the InAs quantum dot layer in a 8 nm wide In0.15Ga0.85As/GaAs QW has been applied which enables tuning of the peak detection wavelength within the long wavelength infrared (LWIR; 8 - 14 gm) region. When the applied bias was reversed, a wavelength shift from 8.5 to 9.5 mu m was observed for the peak position in the spectral response. For another DWELL structure, with a well width of 2 nm, the tuning range of the detector could be shifted from the medium wavelength infrared (MWIR; 3-5 mu m) region to the LWIR region. With small changes in the applied bias, the peak detection wavelength could be shifted from 5.1 to 8 mu m. These tuning properties ofDWELL structures could be essential for applications such as modulators and two-colour infrared detection. © (2008) COPYRIGHT SPIE--The International Society for Optical Engineering.
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| 6. |
- Junique, Stephane, et al.
(författare)
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A Modulating retro-reflector for free-space optical communication
- 2006
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 18:1, s. 85-87
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Tidskriftsartikel (refereegranskat)abstract
- We present modeling of a modulating retro-reflector for free-space optical communication, composed of a reflective resonant-cavity modulator and a corner cube. Although resonant-cavity modulators are sensitive to the angle of incidence of the light beam, we show that with the right geometrical arrangement, the field of view can be more than ten-fold that of the modulator. The modeling is validated by experimental data using a corner cube and a 14 x 14 mm(2) multiple quantum-well modulator.
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| 7. |
- Junique, Stephan, et al.
(författare)
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GaAs-based multiple-quantum-well spatial light modulators fabricated by a wafer-scale process
- 2005
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Ingår i: Applied Optics. - 1559-128X .- 2155-3165. ; 44:9, s. 1635-1641
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Tidskriftsartikel (refereegranskat)abstract
- The design, fabrication, and characterization of large, two-dimensional multiple-quantum-well modulator arrays are presented. Such arrays present a speed advantage compared with competing technologies such as liquid crystals and micromirrors, which are intrinsically limited to the kilohertz range. We discuss the design compromises to reach high-contrast, low-voltage swing optical structures compatible with complementary metal-oxide semiconductor-based integrated circuits and present experimental results. Contrast ratio of 5:1 (limited by the fill factor), variations in uniformity below 1 nm, and frame rates in excess of 10 kHz are demonstrated. Technology maturity for volume production is also discussed.
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| 8. |
- Junique, Stephane, et al.
(författare)
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Large–area, three–state, binary amplitude and binary phase vertical–cavity multiple quantum well electroabsorption modulator
- 2007
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Ingår i: Optics Express. - 1094-4087. ; 15:14, s. 8566-8575
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Tidskriftsartikel (refereegranskat)abstract
- We present the design and characterization of a large optical modulator array based on GaAs multiple quantum wells for amplitude and phase modulation. The device shows two high-reflectance states with a phase difference close to 180 degrees for use as a binary phase modulator. It also shows a third, low-reflectance state for use as an amplitude modulator. It is segmented into 64 pixels in a single row, giving an active area of 2mm x 5mm. We discuss the device performance as a ternary binary amplitude and binary phase modulator, including contrast ratio and uniformity, and show that a voltage swing of only 5V is needed to drive it.
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| 9. |
- Li, X., et al.
(författare)
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Label-free biosensor based on silicon-on-insulator micro-ring resonators
- 2008
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Konferensbidrag (refereegranskat)abstract
- We propose a label-free biosensor based on concentric micro-ring resonators in silicon on insulator (SOI). The concentric micro-ring resonators offer another freedom to obtain deeper notches for higher detection sensitivity. The expanded modes also provide larger sensing area. A resonant frequency shift of ∼1.37 nm is demonstrated, by numerical simulations, between the situation of using a single strand DNA and a double strand DNA.
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| 10. |
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