| 1. |
- Vomiero, Alberto, et al.
(författare)
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Structural properties of reactively sputtered W-Si-N thin films
- 2007
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 102:3
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Tidskriftsartikel (refereegranskat)abstract
- Tungsten-silicon-nitrogen, W-Si-N, ternary thin films have been reactively sputter deposited from W5 Si3 and W Si2 targets using several nitrogen partial pressures. The films have been thermal annealed in the 600-1000 °C temperature range and a wide region of the W-Si-N ternary phase diagram has been explored by changing the N2 Ar ratio during the deposition. Multitechnique approach was adopted for the analysis of the samples. Composition has been determined via ion beam analysis; chemical states were investigated using x-ray photoelectron spectroscopy (XPS); crystalline structure was studied using transmission electron microscopy (TEM) and x-ray diffraction (XRD) and surface morphology by scanning electron microscope. The films deposited in pure argon atmosphere are tungsten rich and approach the target contents as N2 Ar ratio is varied during deposition. Tungsten enrichment in the films is caused by resputtering of silicon which can be inhibited by the formation of silicon nitride, allowing films with SiW ratio closer to the target compositions. The higher capability to form nitrides with silicon than with tungsten favors enhancement of nitrogen content in samples deposited from the silicon rich target (W Si2). The samples with excess nitrogen content have shown losses of this element after thermal treatment. XPS measurements show a break of W-N bonds caused by thermal instability of tungsten nitrides. TEM and XRD revealed the segregation of tungsten in form of metallic or silicide nanoclusters in samples with low nitrogen content (W58 Si21 N21 and W24 Si42 N34). High amounts of nitrogen were revealed to be highly effective in inhibiting metallic cluster coalescence. Measurements of electrical resistivity of as deposited films were performed using four point probe technique. They were found to lie in the range between 0.4 and 79 m cm depending on sample composition. © 2007 American Institute of Physics.
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| 2. |
- Carturan, S., et al.
(författare)
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Formation of silver nanoclusters in transparent polyimides by Ag-K ion-exchange process
- 2007
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Ingår i: European Physical Journal D. - : Springer Science and Business Media LLC. - 1434-6060 .- 1434-6079. ; 42:2, s. 243-251
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Tidskriftsartikel (refereegranskat)abstract
- Silver nanoclusters embedded in two transparent fluorinated polyimides, 4,4'-hexafluoroisopropylidene diphthalic anhydride - 2,3,5,6-tetramethyl paraphenylene diamine (6FDA-DAD) and 3,3',4,4' - biphenyltetracarboxylic acid dianhydride - 1,1-bis(4-aminophenyl)-1-phenyl-2,2,2-trifluoroethane (BPDA-3F), have been produced by surface modification with KOH aqueous solution followed by K-assisted Ag doping and thermal reduction in hydrogen atmosphere. The reaction rate of the nucleophilic hydrolysis in KOH, studied by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectrometry (RBS), depends on the polyimide chemical structure. After ion-exchange in AgNO 3 solution and subsequent annealing, the polyimide structure recovery was monitored by FT-IR whereas the characteristic surface plasmon absorption band of silver nanoparticles was evidenced by optical absorption measurements. The structure of silver nanoclusters as related to size and size distribution in the different polyimide matrices was thoroughly investigated by Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The collected data evidenced a uniform distribution of Ag clusters of nanometric size after thermal treatment at 300 °C in both polyimides. For the same ion-exchange treatment parameters and annealing temperature, XRD analyses evidenced the presence of crystallites with similar sizes. © EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2007.
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| 3. |
- Carturan, S., et al.
(författare)
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Polyimide-based scintillators studied by ion beam induced luminescence
- 2005
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Ingår i: IEEE Transactions on Nuclear Science. - 0018-9499 .- 1558-1578. ; 52:3 II, s. 748-751
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Tidskriftsartikel (refereegranskat)abstract
- New organic scintillators for ionizing radiation sensors are synthesized by dispersing dye molecules into chemically imidized polyimide hosts in order to obtain detection systems with improved radiation resistance with respect to the traditional polyvinyltoluene-based materials. Nile red (NR) and rhodamine B (RB) are dispersed at different concentrations in polyimides derived from the following monomers: 6FDA-DAD, 6FDA-DAB, and BPDA-3F. Scintillating thin films are produced by the spin coating technique. Scintillation tests are performed both on pure polyimides and on binary systems by means of ion beam induced luminescence (IBIL), in which the emission spectrum is collected during the irradiation of the films with a 4He+ beam. From the intensity and the degradation rate of the IBIL signal during irradiation, the scintillation efficiency with respect to NE102 and the radiation hardness of the produced films are calculated. © 2005 IEEE.
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| 4. |
- De Julián Fernández, C., et al.
(författare)
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Study of the gas optical sensing properties of Au-polyimide nanocomposite films prepared by ion implantation
- 2005
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Ingår i: Sensors and actuators. B, Chemical. - : Elsevier BV. - 0925-4005 .- 1873-3077. ; 111-112:SUPPL., s. 225-229
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Tidskriftsartikel (refereegranskat)abstract
- Au-polyimide nanocomposites have been synthesized by implanting Au + ions in pyromellitic dianhydride-4,4′ oxydianiline polyimide films prepared by glow discharge vapor deposition polymerisation (GDVDP). A structural and optical characterization shows that Au clusters grow only implanting 5 × 1016 Au+/cm2. This sample class shows interesting dynamic optical absorption sensing responses towards methanol and ethanol vapors in the spectral range corresponding to the surface plasmon resonance (SPR) peak of the gold nanoparticles. Traditional surface plasmon resonance measurements performed onto virgin polyimide thin films in controlled atmosphere show a sensing activity due to a variation of the film thickness and of the real part of refractive index. The comparison of the results obtained onto virgin films and implanted ones suggests that the sensing mechanisms can be attributed both to the modification of polymer optical properties and to the chemical activity of gold nanoparticles. © 2005 Elsevier B.V. All rights reserved.
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| 5. |
- Gonella, F., et al.
(författare)
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Field-assisted ion diffusion of transition metals for the synthesis of nanocomposite silicate glasses
- 2006
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Ingår i: Materials science & engineering. C, biomimetic materials, sensors and systems. - : Elsevier BV. - 0928-4931 .- 1873-0191. ; 26:5-7, s. 1087-1091
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Tidskriftsartikel (refereegranskat)abstract
- Field-assisted ion diffusion of metals was realized for the controlled doping of silicate glasses. Metallic films deposited onto the substrates by the rf-sputtering technique were used as the metal ions source. In particular, cobalt was, for the first time, introduced into a soda-lime glass by field-assisted ion exchange, giving rise to diffusion profiles that were observed to depend on the preparation parameters, namely, temperature and electric field intensity across the samples. This technique, which allowed to dope the glass matrix with high metal concentration values, can be used as the first step in combined methodologies for the preparation of nanostructured glass composites. The shape of the measured Co diffusion profiles indicates that the migration process depends not only on the experimental parameters but also on the behavior of alkali ions within the glass. Chemical phenomena occurring at the metal/glass interface also play a significant role in the penetration of the Co ions. The possibility of doping the glass with two different metal species was also investigated, with the aim to create the condition for the formation of core-shell or alloy nanoclusters. In particular, preliminary results on Co + Au field-assisted co-diffusion are presented. © 2005 Elsevier B.V. All rights reserved.
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| 6. |
- Quaranta, A., et al.
(författare)
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Analysis of art objects by means of ion beam induced luminescence
- 2006
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Ingår i: Journal of Physics, Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 41:1, s. 543-546
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Tidskriftsartikel (refereegranskat)abstract
- The impact of energetic ions on solid samples gives rise to the emission of visible light owing to the electronic excitation of intrinsic defects or extrinsic impurities. The intensity and position of the emission features provide information on the nature of the luminescence centers and on their chemical environments. This makes ion beam induced luminescence (IBIL) a useful complement to other ion beam analyses, like PIXE, in the cultural heritage field in characterizing the composition and the provenience of art objects. In the present paper, IBIL measurements have been performed on inorganic pigments for underlying the complementary role played by IBIL in the analysis of artistic works. Some blue and red pigment has been presented as case study. © 2006 IOP Publishing Ltd.
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| 7. |
- Vomiero, Alberto, et al.
(författare)
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Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 88:3, s. 1-3
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Tidskriftsartikel (refereegranskat)abstract
- W-Si-N layers about 200 nm thick with different nitrogen content were reactively sputtered from a W5 Si3 target on oxidized silicon substrates. The thermal stability of the films' composition and resistivity was studied with ion beam analysis and four-point probe measurements. Upon vacuum annealing from 600 to 980 °C for 1.5 h, a sample with an initial 56 at. % of nitrogen gradually loses nitrogen down to 36%. This composition lies close to the W- Si3 N4 tie line. Concurrently, the room temperature resistivity decreases from 4.7 to about 2 mΩ cm. The composition changes only a little for a sample whose initial composition is near the W- Si3 N4 tie line and the resistivity changes significantly less than for the nitrogen-rich film. Interpretations are discussed. © 2006 American Institute of Physics.
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