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Träfflista för sökning "WFRF:(Rakowski Rafal) srt2:(2010)"

Sökning: WFRF:(Rakowski Rafal) > (2010)

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1.
  • He, Xinkui, et al. (författare)
  • Interference effects in two-color high-order harmonic generation
  • 2010
  • Ingår i: Physical Review A (Atomic, Molecular and Optical Physics). - 1050-2947. ; 82:3
  • Tidskriftsartikel (refereegranskat)abstract
    • We study high-order harmonic generation in argon driven by an intense 800 nm laser field and a small fraction of its second harmonic. The intensity and divergence of the emitted even and odd harmonics are strongly modulated as a function of the relative delay between the two fields. We provide a detailed analysis of the underlying interference effects. The interference changes drastically when approaching the cutoff region due to a switch of the dominant trajectory responsible for harmonic generation.
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2.
  • Rakowski, Rafal, et al. (författare)
  • Characterization and optimization of the laser-produced plasma EUV source at 13.5 nm based on a double-stream Xe/He gas puff target
  • 2010
  • Ingår i: Applied Physics B. - : Springer Science and Business Media LLC. - 0946-2171 .- 1432-0649. ; 101:4, s. 773-789
  • Tidskriftsartikel (refereegranskat)abstract
    • The paper describes a debris-free, efficient laser-produced plasma source emitting EUV radiation. The source is based on a double-stream Xe/He gas-puff. Its properties and spectroscopic signatures are characterized and discussed. The spatio-spectral features of the EUV emission are investigated. We show a large body of results related to the intensity and brightness of the EUV emission, its spatial, temporal, and angular behavior and the effect of the repetition rate as well. A conversion efficiency of laser energy into EUV in-band energy at 13.5 nm of 0.42% has been gained. The electron temperature and electron density of the source were estimated by means of a novel method using the FLY code. The experimental data and the Hullac code calculations are compared and discussed. The source is well suited for EUV metrology purposes. The potential of the source for application in EUV lithography was earlier demonstrated in the optical characterization of Mo/Si multi-layer mirrors and photo-etching of polymers.
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  • Resultat 1-2 av 2

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