SwePub
Tyck till om SwePub Sök här!
Sök i SwePub databas

  Utökad sökning

Träfflista för sökning "WFRF:(Raskin P) srt2:(2010-2014)"

Sökning: WFRF:(Raskin P) > (2010-2014)

  • Resultat 1-4 av 4
Sortera/gruppera träfflistan
   
NumreringReferensOmslagsbildHitta
1.
  •  
2.
  • Bhaskar, U., et al. (författare)
  • On-chip tensile testing of the mechanical and electro-mechanical properties of nano-scale silicon free-standing beams
  • 2011
  • Ingår i: Advanced Materials Research. - 1662-8985 .- 1022-6680. ; 276, s. 117-126
  • Tidskriftsartikel (refereegranskat)abstract
    • A simple and versatile on-chip tensile testing method is proposed for the statistical evaluation of size effects on the mechanical strength of silicon thin films along with the simultaneous study of (from low to ultra) strain effects on the carrier transport. Mechanical results are presented on the fracture strength of micro-nano scale silicon beams, followed with a discussion on interface states and problems facing reliable nano-electronic and nano-electromechanical characterizations
  •  
3.
  • Passi, V., et al. (författare)
  • Anisotropic vapor HF etching of silicon dioxide for Si microstructure release
  • 2012
  • Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 95, s. 83-89
  • Tidskriftsartikel (refereegranskat)abstract
    • Damages are created in a sacrificial layer of silicon-dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon-dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Based on the experimentally extracted etch rate of unimplanted and implanted silicon-dioxide, the patterning of the sacrificial layer can be predicted by simulation.
  •  
4.
  • Passi, V., et al. (författare)
  • High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires
  • 2012
  • Ingår i: Journal of Microelectromechanical Systems. - 1057-7157. ; 21:4, s. 822-829
  • Tidskriftsartikel (refereegranskat)abstract
    • An on-chip internal stress-based testing device has been developed in order to deform silicon nanoribbons and nanowires up to large strains enabling high throughput of data. The fracture strain and survival probability distribution have been generated for 50-nm-thick and 50- or 500-nm-wide specimens with lengths varying between 2.5 and 10 mu m. Fracture strains reaching up to 5% are attained in the smallest specimens, whereas 90% of the specimens survive 2.5% deformation. This testing platform opens an avenue to investigate and use electromechanical couplings appearing under large mechanical stress or large deformation.
  •  
Skapa referenser, mejla, bekava och länka
  • Resultat 1-4 av 4

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Stäng

Kopiera och spara länken för att återkomma till aktuell vy