| 1. |
- Nilsson, Joakim, et al.
(author)
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S-band discrete and MMIC GaN power amplifiers
- 2009
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In: European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009. - 9782874870125 ; , s. 495-498
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Conference paper (peer-reviewed)abstract
- The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7-3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the european co-project Korrigan. The MMIC power amplifier was designed using a 0.25 ?m GaN HEMT process supplied and processed by Chalmers.
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| 2. |
- Sudow, Mattias, 1980, et al.
(author)
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An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design
- 2008
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In: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 56:8, s. 1827-1833
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Journal article (peer-reviewed)abstract
- A MMIC process in AlGaN/GaN technology for advanced transceiver design has been developed. The process is based on microstrip technology with a complete model library of passive elements and AlGaN/GaN HEMTs. The transistor technology in this process is suitable for both power and low noise design, demonstrated with a power density of 5 W/mm, and an ${rm NF}_{min}$ of 1.4 dB at $X$ -band. Process stability of subcircuits, complementary to power amplifiers and LNAs, in a transceiver system have been investigated. The results indicate that an all AlGaN/GaN MMIC transceiver is realizable using this technology.
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| 3. |
- Sudow, Mattias, 1980, et al.
(author)
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An SiC MESFET-based MMIC process
- 2006
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In: IEEE Transactions on Microwave Theory and Techniques. ; 54:12, Part 1, s. 4072-4078
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Journal article (peer-reviewed)abstract
- A monolithic microwave integrated circuit (MMIC)process based on an in-house SiC MESFET technology has been developed. The process uses microstrip technology, and a complete set of passive components, including MIMcapacitors, spiral inductors,thin-film resistors, and via-holes, has been developed. The potential of the process is demonstrated by an 8-W power amplifierat 3 GHz, a high-linearity -band mixer showing a third-order intercept point of 38 dBm, and a high-power limiter.
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| 4. |
- Sudow, Mattias, 1980, et al.
(author)
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The Chalmers microstrip SiC MMIC Process
- 2005
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In: Conference Proceedings Gighahertz 2005.
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Conference paper (peer-reviewed)abstract
- A generic microstrip MMIC process targeted for SiC and GaN technology has beendeveloped. Passive components for high power operation were developed and verified. Circuit modelsfor both passive and active components have been formulated. Using the developed MMIC process anamplifier and a limiter have been manufactured.
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| 5. |
- Andersson, Kristoffer, 1976, et al.
(author)
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Fabrication and characterization of field-plated buried-gate SiC MESFETs
- 2006
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In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:7, s. 573-575
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Journal article (peer-reviewed)abstract
- Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-/spl mu/m gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz /spl plusmn/ 100 kHz indicate an optimum FP length for high linearity operation.
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| 6. |
- Angelov, Iltcho, 1943, et al.
(author)
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Large-Signal Modelling and Comparison of AlGaN/GaN HEMTs and SiC MESFETs
- 2006
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In: IEEE Asia PAcific Microwave Conference, 2006, Yokohama, Japan. - 9784902339116 ; , s. 279-282
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Conference paper (peer-reviewed)abstract
- The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated with DC, S, and LS measurements. Special attention was paid to improve the management of harmonics and provide. a more physical treatment of the dispersion. The model was implemented in a commercial CAD tool and exhibit good overall accuracy.
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| 7. |
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| 8. |
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| 9. |
- Desmaris, Vincent, 1977, et al.
(author)
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Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs
- 2008
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In: Solid-State Electronics. ; 52, s. 632-636
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Journal article (peer-reviewed)abstract
- The effects of the composition of oxynitride passivations (SiOxNy) deposited by plasma enhanced chemical-vapor deposition (PECVD) at room temperature on the microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. Five different SiOxNy passivating layers were deposited covering the whole range of dielectrics combinations from SiOx to SiNy. Their impacts on the HEMT performance were studied by means of DC, S-parameters, pulsed IV and load-pull measurements. The oxynitride dielectric with a refraction index of 1.58 was shown to be an effective SiOxNy passivation for limiting the gate-lag effects in the HEMTs and at the same time increasing the breakdown voltage of the device. It is thus a promising passivation layer for microwave power high voltage and high power applications.
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