| 1. |
- Locke, Adam E, et al.
(författare)
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Genetic studies of body mass index yield new insights for obesity biology.
- 2015
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Ingår i: Nature. - : Springer Science and Business Media LLC. - 0028-0836 .- 1476-4687. ; 518:7538, s. 197-401
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Tidskriftsartikel (refereegranskat)abstract
- Obesity is heritable and predisposes to many diseases. To understand the genetic basis of obesity better, here we conduct a genome-wide association study and Metabochip meta-analysis of body mass index (BMI), a measure commonly used to define obesity and assess adiposity, in up to 339,224 individuals. This analysis identifies 97 BMI-associated loci (P < 5 × 10(-8)), 56 of which are novel. Five loci demonstrate clear evidence of several independent association signals, and many loci have significant effects on other metabolic phenotypes. The 97 loci account for ∼2.7% of BMI variation, and genome-wide estimates suggest that common variation accounts for >20% of BMI variation. Pathway analyses provide strong support for a role of the central nervous system in obesity susceptibility and implicate new genes and pathways, including those related to synaptic function, glutamate signalling, insulin secretion/action, energy metabolism, lipid biology and adipogenesis.
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| 2. |
- Shungin, Dmitry, et al.
(författare)
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New genetic loci link adipose and insulin biology to body fat distribution.
- 2015
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Ingår i: Nature. - : Springer Science and Business Media LLC. - 0028-0836 .- 1476-4687. ; 518:7538, s. 187-378
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Tidskriftsartikel (refereegranskat)abstract
- Body fat distribution is a heritable trait and a well-established predictor of adverse metabolic outcomes, independent of overall adiposity. To increase our understanding of the genetic basis of body fat distribution and its molecular links to cardiometabolic traits, here we conduct genome-wide association meta-analyses of traits related to waist and hip circumferences in up to 224,459 individuals. We identify 49 loci (33 new) associated with waist-to-hip ratio adjusted for body mass index (BMI), and an additional 19 loci newly associated with related waist and hip circumference measures (P < 5 × 10(-8)). In total, 20 of the 49 waist-to-hip ratio adjusted for BMI loci show significant sexual dimorphism, 19 of which display a stronger effect in women. The identified loci were enriched for genes expressed in adipose tissue and for putative regulatory elements in adipocytes. Pathway analyses implicated adipogenesis, angiogenesis, transcriptional regulation and insulin resistance as processes affecting fat distribution, providing insight into potential pathophysiological mechanisms.
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| 3. |
- Ried, Janina S., et al.
(författare)
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A principal component meta-analysis on multiple anthropometric traits identifies novel loci for body shape
- 2016
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Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 7
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Tidskriftsartikel (refereegranskat)abstract
- Large consortia have revealed hundreds of genetic loci associated with anthropometric traits, one trait at a time. We examined whether genetic variants affect body shape as a composite phenotype that is represented by a combination of anthropometric traits. We developed an approach that calculates averaged PCs (AvPCs) representing body shape derived from six anthropometric traits (body mass index, height, weight, waist and hip circumference, waist-to-hip ratio). The first four AvPCs explain >99% of the variability, are heritable, and associate with cardiometabolic outcomes. We performed genome-wide association analyses for each body shape composite phenotype across 65 studies and meta-analysed summary statistics. We identify six novel loci: LEMD2 and CD47 for AvPC1, RPS6KA5/C14orf159 and GANAB for AvPC3, and ARL15 and ANP32 for AvPC4. Our findings highlight the value of using multiple traits to define complex phenotypes for discovery, which are not captured by single-trait analyses, and may shed light onto new pathways.
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| 4. |
- Alonso-Blanco, Carlos, et al.
(författare)
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1,135 Genomes Reveal the Global Pattern of Polymorphism in Arabidopsis thaliana
- 2016
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Ingår i: Cell. - : Elsevier. - 0092-8674 .- 1097-4172. ; 166:2, s. 481-491
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Tidskriftsartikel (refereegranskat)abstract
- Arabidopsis thaliana serves as a model organism for the study of fundamental physiological, cellular, and molecular processes. It has also greatly advanced our understanding of intraspecific genome variation. We present a detailed map of variation in 1,135 high-quality re-sequenced natural inbred lines representing the native Eurasian and North African range and recently colonized North America. We identify relict populations that continue to inhabit ancestral habitats, primarily in the Iberian Peninsula. They have mixed with a lineage that has spread to northern latitudes from an unknown glacial refugium and is now found in a much broader spectrum of habitats. Insights into the history of the species and the fine-scale distribution of genetic diversity provide the basis for full exploitation of A. thaliana natural variation through integration of genomes and epigenomes with molecular and non-molecular phenotypes.
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| 5. |
- Ben Sedrine, N., et al.
(författare)
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Fluctuating potentials in GaAs : Si nanowires: Critical reduction of the influence of polytypism on the electronic structure
- 2018
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Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3364 .- 2040-3372. ; 10:8, s. 3697-3708
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the effects of Si doping in GaAs nanowires (NWs) grown on GaAs (111)B by molecular beam epitaxy with different Si doping levels (nominal free carrier concentrations of 1 × 1016, 8 × 1016, 1 × 1018 and 5 × 1018 cm-3) are deeply investigated using scanning electron microscopy (SEM), transmission electron microscopy (TEM), grazing incidence X-ray diffraction (GID), photoluminescence (PL) and cathadoluminescence (CL). TEM results reveal a mixture of wurtzite (WZ) and zinc-blende (ZB) segments along the NW axis independently of the Si doping levels. GID measurements suggest a slight increase of the ZB fraction with the Si doping. Low temperature PL and CL spectra exhibit sharp lines in the energy range 1.41-1.48 eV, for the samples with lower Si doping levels. However, the emission intensity increases and is accompanied by a clear broadening of the observed lines for the samples with higher Si doping levels. The staggered type-II band alignment only determines the optical properties of the lower doping levels in GaAs:Si NWs. For the higher Si doping levels, the electronic energy level structure of the NWs is determined by electrostatic fluctuating potentials intimately related to the amphoteric behavior of the Si dopant in GaAs. For the heavily doped NWs, the estimated depth of the potential wells is ∼96-117 meV. Our results reveal that the occurrence of the fluctuating potentials is not dependent on the crystalline phase and shows that the limitation imposed by the polytypism can be overcome.
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| 6. |
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| 7. |
- Alberto, H. V., et al.
(författare)
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Slow-muon study of quaternary solar-cell materials : Single layers and p-n junctions
- 2018
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Ingår i: Physical Review Materials. - : AMER PHYSICAL SOC. - 2475-9953. ; 2:2
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Tidskriftsartikel (refereegranskat)abstract
- Thin films and p-n junctions for solar cells based on the absorber materials Cu(In, Ga) Se-2 and Cu2ZnSnS4 were investigated as a function of depth using implanted low energy muons. The most significant result is a clear decrease of the formation probability of the Mu(+) state at the heterojunction interface as well as at the surface of the Cu(In, Ga)Se-2 film. This reduction is attributed to a reduced bonding reaction of the muon in the absorber defect layer at its surface. In addition, the activation energies for the conversion from a muon in an atomiclike configuration to a anion-bound position are determined from temperature-dependence measurements. It is concluded that the muon probe provides a measurement of the effective surface defect layer width, both at the heterojunctions and at the films. The CIGS surface defect layer is crucial for solar-cell electrical performance and additional information can be used for further optimizations of the surface.
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| 8. |
- Cunha, Jose M., V, et al.
(författare)
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Decoupling of Optical and Electrical Properties of Rear Contact CIGS Solar Cells
- 2019
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Ingår i: IEEE Journal of Photovoltaics. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-3381 .- 2156-3403. ; 9:6, s. 1857-1862
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Tidskriftsartikel (refereegranskat)abstract
- A novel architecture that comprises rear interface passivation and increased rear optical reflection is presented with the following advantages: i) enhanced optical reflection is achieved by the deposition of a metallic layer over the Mo rear contact; ii) improved interface qualitywithCIGS by adding a sputteredAl 2O 3 layer over the metallic layer; and, iii) optimal ohmic electrical contact ensured by rear-openings refilling with a second layer of Mo as generally observed from the growth of CIGS on Mo. Hence, a decoupling between the electrical function and the optical purpose of the rear substrate is achieved. We present in detail the manufacturing procedure of such type of architecture together with its benefits and caveats. A preliminary analysis showing an architecture proof-of-concept is presented and discussed.
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| 9. |
- Fernandes, P. A., et al.
(författare)
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Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursors
- 2019
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Ingår i: Journal of Alloys and Compounds. - : Elsevier BV. - 0925-8388 .- 1873-4669. ; 797, s. 1359-1366
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we present a procedure to grow Cu12Sb4S13 and Cu3SbS4 thin films consisting of the deposition of simultaneously sputtered metal precursors followed by a annealing treatment in a sulphur atmosphere. The selection of the ternary phase is performed by adjusting the sulphur evaporation temperature in the chalcogenization process. It is shown that for a sulphur evaporation temperature of 140 °C the predominant phase is Cu12Sb4S13 while for 180 °C the predominant phase is Cu3SbS4. In order to ensure precursor composition homogeneity, the Cu-Sb metallic precursors are deposited simultaneously by RF magnetron sputtering using adjustable segmented targets. The morphological characterization of the films was made by scanning electron microscopy and the composition was analysed by energy dispersive spectroscopy. The structural analysis and phase identification were performed by X-ray diffraction and Raman scattering. The optical properties were studied on films deposited directly on bare glass and the optical bandgap energies of 1.47 eV and 0.89 eV for Cu12Sb4S13 and Cu3SbS4, respectively, were determined.
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| 10. |
- Kovacic, M., et al.
(författare)
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Light management design in ultra-thin chalcopyrite photovoltaic devices by employing optical modelling
- 2019
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Ingår i: Solar Energy Materials and Solar Cells. - : ELSEVIER. - 0927-0248 .- 1879-3398. ; 200
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Tidskriftsartikel (refereegranskat)abstract
- In ultra-thin chalcopyrite solar cells and photovoltaic modules, efficient light management is required to increase the photocurrent and to gain in conversion efficiency. In this work we employ optical modelling to investigate different optical approaches and quantify their potential improvements in the short-circuit current density of Cu (In, Ga)Se-2 (CIGS) devices. For structures with an ultra-thin (500 nm) CIGS absorber, we study the improvements related to the introduction of (i) highly reflective metal back reflectors, (ii) internal nano-textures applied to the substrate and (iii) external micro-textures by using a light management foil. In the analysis we use CIGS devices in a PV module configuration, thus, solar cell structure including encapsulation and front glass. A thin Al2O3 layer was considered in the structure at the rear side of CIGS for passivation and diffusion barrier for metal reflectors. We show that not any individual aforementioned approach is sufficient to compensate for the short circuit drop related to ultra-thin absorber, but a combination of a highly reflective back contact and textures (internal or external) is needed to obtain and also exceed the short-circuit current density of a thick (1800 nm) CIGS absorber.
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