| 1. |
- Rapp, S., et al.
(författare)
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All-epitaxial single-fused 1.55 ÎŒm vertical cavity laser based on an InP bragg reflector
- 1999
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Ingår i: Japanese Journal of Applied Physics. - 0021-4922 .- 1347-4065. ; 38:2 B, s. 1261-1264
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Tidskriftsartikel (refereegranskat)abstract
- We have realised an all-epitaxial 1.55 Όm vertical cavity laser by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32-period p-doped (C) AlGaAs/GaAs top mirror onto a half-cavity structure consisting of a 50-period n-doped (Si) GaInAsP/InP bottom mirror and a 9 quantum well GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed at temperatures up to 40°C and at pulse lengths of 10 Όs up to 5°C. The minimum threshold current density at room temperature is 1.8 kA/cm2 for a device diameter of 55 Όm. Compared to nonoxidised laser diodes, the threshold current is markedly decreased in oxidised laser diodes. © 1999 Publication Board, Japanese Journal of Applied Physics.
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| 2. |
- Rapp, S., et al.
(författare)
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All epitaxial single-fused 1.55ÎŒm vertical cavity laser based on an InP Bragg reflector
- 1998
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Tsukuba, Jpn. ; , s. 303-306
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Konferensbidrag (refereegranskat)abstract
- We have realised all epitaxial 1.55Όm vertical cavity lasers by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32 period p-doped (C) AlGaAs/GaAs top mirror to a half cavity structure consisting of a 50 period n-doped (Si) GaInAsP/InP bottom mirror and 9QW GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed for temperatures up to 40°C and at pulse lengths of 10Όs up to 5°C. The minimum threshold current density at room temperature is 1.8kA/cm2 for a device diameter of 55Όm. Compared to non-oxidised laser diodes, the oxidation decreases the threshold currents significantly.
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| 3. |
- Salomonsson, P., et al.
(författare)
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Temperature-dependent performance of 1.55 ÎŒm vertical-cavity lasers with InGaAsP/InP bottom mirror
- 1999
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Davos, Switz. ; :Piscataway, NJ, United States, s. 223-226
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Tidskriftsartikel (refereegranskat)abstract
- We have fabricated and evaluated a long-wavelength vertical-cavity laser (VCL) based on an epitaxially integrated InP distributed Bragg reflector (DBR) under continuous wave (CW) and pulsed conditions. We conclude that, for an InP-DBR-down configuration, the high-temperature performance is limited by the heat conductivity of the bottom mirror. The highest operating temperature for CW and pulsed condition is 17 °C and 101 °C respectively, indicating a substantial self-heating for CW. To investigate the prospect for improved performance in other mounting configurations, we have applied a two-dimensional finite element analysis to the heat transfer problem. It is suggested that for top-side-down mounting with the AlGaAs/GaAs DBR closest to the heat sink, a performance comparable to that of so called double-fused VCLs could be possible.
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| 4. |
- Streubel, K., et al.
(författare)
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Long wavelength vertical cavity lasers
- 1999
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - San Jose, CA, USA. ; 3625:Bellingham, WA, United States, s. 304-314
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Tidskriftsartikel (refereegranskat)abstract
- We report on three novel vertical cavity laser (VCL) structures for 1.55 Όm operation. Two of the VCL structures utilize an n-type GaInAsP/InP Bragg mirror combined with an Al(Ga)As/GaAs mirror using either wafer-fusion or metamorphic epitaxial growth. The third VCL employs two wafer fused AlGaAs/GaAs mirrors, in which lateral current confinement is obtained by localized fusion of the p-mirror. All three VCLs use strained GaInAsP quantum wells as active material and achieve continuous-wave (CW) operation at room-temperature or above. The single fused VCL operates up to 17 °C and 101 °C in continuous-wave and pulsed mode, respectively. The monolithic VCL-structure with a metamorphic GaAs/AlAs n-type mirror uses a reversed biased tunnel junction for current injection. This laser achieves record high output power (1mW) at room temperature and operates CW up to 45 °C. The double fused VCLs with a 10×10 Όm2 active area operate CW up to 30 °C with threshold current as low as 2.5 mA and series resistance of 30 Ohms. The emission spectra exhibit a single lasing mode polarized with 30 dB extinction ratio and a spectral linewidth of 150 MHz.
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| 5. |
- Hammar, M., et al.
(författare)
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Systematics of electrical conductivity across InP to GaAs wafer fused interfaces
- 1998
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Tsukuba, Jpn. ; , s. 801-804
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Konferensbidrag (refereegranskat)abstract
- We report on the electrical and compositional characterization of wafer fused isotype heterojunctions between Zn, C or Si doped GaAs and Zn or Si doped InP. The junctions were characterized with current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentration of oxygen, carbon and iron.
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| 6. |
- Hammar, M., et al.
(författare)
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Systematics of electrical conductivity across InP to GaAs wafer-fused interfaces
- 1999
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Ingår i: Japanese Journal of Applied Physics. - 0021-4922 .- 1347-4065. ; 38:2 B, s. 1111-1114
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Tidskriftsartikel (refereegranskat)abstract
- We report on the electrical and compositional characterization of wafer-fused isotype heterojunctions between Zn-, C- or Si-doped GaAs and Zn- or Si-doped InP. The junctions were characterized by current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentrations of oxygen, carbon and iron. © 1999 Publication Board, Japanese Journal of Applied Physics.
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| 7. |
- Rapp, S., et al.
(författare)
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Near room-temperature continuous-wave operation of electrically pumped 1.55 ÎŒm vertical cavity lasers with InGaAsP/InP bottom mirror
- 1999
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Ingår i: Electronics Letters. - 0013-5194 .- 1350-911X. ; 35:1, s. 49-50
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Tidskriftsartikel (refereegranskat)abstract
- The first near room-temperature continuous-wave (CW) operation of a vertical cavity laser based on an epitaxial InGaAsP/InP bottom mirror is reported. The structure employs a package of nine strain compensated GaInAsP quantum wells and a wafer-fused GaAs/AlGaAs top mirror. For a 10 Όm diameter device, the threshold current is 6mA and the input threshold power is 21mW. The maximum operating temperature is 17 and 101°C for CW and pulsed conditions, respectively. © IEE 1999.
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| 8. |
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| 9. |
- Salomonsson, F., et al.
(författare)
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InP-based 1.55ÎŒm Resonant Cavity Light-Emitting Diode with two Epitaxial Mirrors
- 1999
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Ingår i: Physica Scripta T. - 0281-1847. ; 79, s. 135-137
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Tidskriftsartikel (refereegranskat)abstract
- We report on the fabrication and characterisation of a resonant cavity light-emitting diode (RCLED) operating at 1.55 ÎŒm. As compared to conventional LEDs such devices merit from a higher emission intensity with a more narrow linewidth and are therefore promising as light sources in fibre optical communication systems. The present design is based on an InGaAsP multi-quantum well structure and utilises two InGaAsP/InP epitaxial distributed Bragg reflectors (DBRs), one 50 periods high reflectivity bottom mirror and a top out-coupling mirror with lower reflectivity. This gives the advantage of top-emission combined with the possibility of achieving very narrow linewidth. The process is fully monolithic and full wafer scale compatible.
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