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| 3. |
- Axelson, Olav, 1937-, et al.
(författare)
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Regulatory toxicology and pharmacology.
- 2003
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Ingår i: International journal of occupational and environmental health. - 1077-3525 .- 2049-3967. ; 9, s. 386-389
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Tidskriftsartikel (refereegranskat)
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| 4. |
- Björk, Mikael, et al.
(författare)
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One-dimensional heterostructures in semiconductor nanowhiskers
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:6, s. 1058-1060
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Tidskriftsartikel (refereegranskat)abstract
- We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore.
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| 5. |
- Björk, Mikael, et al.
(författare)
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One-dimensional steeplechase for electrons realized
- 2002
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 2:2, s. 87-89
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Tidskriftsartikel (refereegranskat)abstract
- We report growth of one-dimensional semiconductor nanocrystals, nanowhiskers, in which segments of the whisker with different composition are formed, illustrated by InAs whiskers containing segments of InP. Our conditions for growth allow the formation of abrupt interfaces and heterostructure barriers of thickness from a few monolayers to 100s of nanometers, thus creating a one-dimensional landscape along which the electrons move. The crystalline perfection, the quality of the interfaces, and the variation in the lattice constant are demonstrated by high-resolution transmission electron microscopy, and the conduction band off-set of 0.6 eV is deduced from the current due to thermal excitation of electrons over an InP barrier.
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| 6. |
- Borgström, Magnus, et al.
(författare)
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Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
- 2003
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Ingår i: Journal of Crystal Growth. - 0022-0248. ; 248, s. 310-316
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Tidskriftsartikel (refereegranskat)abstract
- In this paper. we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results. showing that As/P exchange reactions occur even when capping the dots with InP are presented. (C) 2002 Elsevier Science B.V. All rights reserved.
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| 7. |
- Borgström, Magnus, et al.
(författare)
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Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
- 2002
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Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Konferensbidrag (refereegranskat)abstract
- We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface
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| 8. |
- Bryllert, Tomas, et al.
(författare)
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Designed emitter states in resonant tunneling through quantum dots
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:15, s. 2681-2683
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Tidskriftsartikel (refereegranskat)abstract
- Resonant tunneling through a single layer of self-assembled quantum dots (QDs) is compared to tunneling through two layers of vertically aligned (stacked) dots. The difference can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. The temperature dependence of current peaks originating in tunneling through individual QDs and individual stacks is used to clarify this point. In addition, we show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analyzed in a resonant tunneling experiment. (C) 2002 American Institute of Physics.
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| 9. |
- Bryllert, Tomas, et al.
(författare)
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Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening
- 2002
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Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Konferensbidrag (refereegranskat)abstract
- Resonant tunneling through a single layer of self-assembled quantum dots (QDs) as well as tunneling through two layers of vertically aligned (stacked) dots is investigated. The difference between single and double layers of QDs can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. By fabricating small-area devices we are able to probe single stacks of quantum dots, revealing details of the coupling between the stacked dots. Very sharp resonances, with peak-to-valley ratios of several hundred, have been measured in the current-voltage characteristics. We also show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analysed in a resonant tunneling experiment
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| 10. |
- Håkanson, Ulf, et al.
(författare)
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Luminescence polarization of ordered GaInP/InP islands
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 82:4, s. 627-629
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Tidskriftsartikel (refereegranskat)abstract
- The luminescence polarization properties of GaInP islands have been investigated. The islands, which form during overgrowth of InP quantum dots, were studied using scanning tunneling luminescence (STL) and photoluminescence (PL). STL from these islands shows emission at an energy below the main emission peak of the bulk GaInP. The linear PL polarization anisotropy was measured at low temperature, for which the emission from the islands shows high polarization anisotropy. The intensity maximum for the emission occurs for light polarized parallel to the elongation of the islands. The observed linear PL polarization anisotropy indicates the presence of highly ordered domains of GaInP in the islands. (C) 2003 American Institute of Physics.
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